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Rochester Electronics LLC MTP8N50E N-CHANNEL POWER MOSFET
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DigiKey	MTP8N50E	Bulk			245	1 - 10 - 100 - 1000 $1.23 10000 $1.23	Buy Now
Aptina Imaging MTP8N50E Trans MOSFET N-CH Si 500V 8A 3-Pin(3+Tab) TO-220
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Verical	MTP8N50E		746		271	1 - 10 - 100 - 1000 $1.25 10000 $1.25	Buy Now
Motorola Semiconductor Products MTP8N50E TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,8A I(D),TO-220AB
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Quest Components	MTP8N50E		8			1 $2.4745 10 $1.9796 100 $1.9796 1000 $1.9796 10000 $1.9796	Buy Now
	MTP8N50E		5			1 $2.4745 10 $1.9796 100 $1.9796 1000 $1.9796 10000 $1.9796	Buy Now
	MTP8N50E		1			1 $1.9688 10 $1.9688 100 $1.9688 1000 $1.9688 10000 $1.9688	Buy Now
onsemi MTP8N50E Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220 '
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Rochester Electronics	MTP8N50E		746		1	1 $1.18 10 $1.18 100 $1.11 1000 $1 10000 $1	Buy Now
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MTP8N50E Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF
MTP8N50E	Motorola	TMOS E-FET Power Field Effect Transistor	Original	PDF
MTP8N50E	On Semiconductor	TMOS E-FET Power Field Effect Transistor	Original	PDF
MTP8N50E	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
MTP8N50E	Unknown	FET Data Book	Scan	PDF
MTP8N50E	On Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 500V, 4A, Pkg Style TO220Ab	Scan	PDF
MTP8N50E/D	On Semiconductor	TMOS POWER FET 8.0 AMPERES 500 VOLTS	Original	PDF
MTP8N50E-D	On Semiconductor	TMOS E-FET Power Field Effect Transistor N-Channel	Original	PDF

MTP8N50E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NT 407 F MOSFET TRANSISTOR Abstract: MTP8N50E TMOS E-FET Text: MOTOROLA Order this document by MTP8N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP8N50E N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without	Original	PDF	MTP8N50E/D MTP8N50E NT 407 F MOSFET TRANSISTOR MTP8N50E TMOS E-FET
MTP8N50E Abstract: No abstract text available Text: TMOS E-FET. Power Field Effect Transistor MTP8N50E N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is	Original	PDF	MTP8N50E r14525 MTP8N50E/D MTP8N50E
MTP8N50E Abstract: No abstract text available Text: TMOS E−FET. Power Field Effect Transistor MTP8N50E N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced TMOS E−FET is	Original	PDF	MTP8N50E r14525 MTP8N50E/D MTP8N50E
Untitled Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP8N50E TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	MTP8N50E O-220AB
MC68B21CP Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References	Original	PDF	SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
SO20N Abstract: MTP6N50E MTP8N50E SO16N, SOIC Package free 1N4148 mtp6n50 passive resonant snubber MC33157 MC33157DW MC33260 Text: Order this publication as PBMC33157/D Semiconductor Components Group Analog, Logic and Discretes 20-July-1999 ides or v o r lf rP o e r l t l n ntro cy Co o C ge uen allasts d q i r e r B F pB Half he-Art m a L of-t escent e t r Sta Fluo Introduction The MC33157 is a half bridge controller and driver designed specifically	Original	PDF	PBMC33157/D 20-July-1999 MC33157 SO20N MTP6N50E MTP8N50E SO16N, SOIC Package free 1N4148 mtp6n50 passive resonant snubber MC33157DW MC33260
mosfet cross reference Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local	Original	PDF
zvt boost converter Abstract: uc3855 Application Note D4602 500w power amplifier circuit diagram schematic 500w power amplifier circuit diagram SATURABLE CORE Saturable Core Square Wave Oscillator SEM-400 95160 UC3855 8 pin Text: U-153 UNITRODE CORPORATION UC3855A/B HIGH PERFORMANCE POWER FACTOR PREREGULATOR James P. Noon New Product Applications Engineer INTRODUCTION The trend in power converters is towards increasingly higher power densities. Usually, the method to achieve this is to increase the switching frequency,	Original	PDF	U-153 UC3855A/B 100kHz. zvt boost converter uc3855 Application Note D4602 500w power amplifier circuit diagram schematic 500w power amplifier circuit diagram SATURABLE CORE Saturable Core Square Wave Oscillator SEM-400 95160 UC3855 8 pin
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	PDF	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
transistor Electronic ballast "INDUCTION LAMP" Abstract: schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D Text: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic	Original	PDF	AN1543/D AN1543 AN1543/D* transistor Electronic ballast "INDUCTION LAMP" schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D
Epcos n67 material Abstract: AND8016 ac to dc pfc boost converter 500w smps 500w half bridge PFC buck converter design 10000w power supply APPLICATION DIODE 1N5406 bridge rectifier using the diode 1N4007 circuit f MC33260 application smps 500W Text: AND8016/D Design of Power Factor Correction Circuit Using Greenline  Compact Power Factor Controller MC33260 http://onsemi.com Prepared by Ming Hian Chew ON Semiconductor Analog Applications Engineering APPLICATION NOTE Introduction The MC33260 is an active power factor controller that	Original	PDF	AND8016/D MC33260 MC33260 r14153 Epcos n67 material AND8016 ac to dc pfc boost converter 500w smps 500w half bridge PFC buck converter design 10000w power supply APPLICATION DIODE 1N5406 bridge rectifier using the diode 1N4007 circuit f MC33260 application smps 500W
MC33368 Abstract: EE25 transformer EE42 core EE42/15 1N4006 1N4744 1N4934 MC33368D MC33368DR2 MC33368P Text: MC33368 High Voltage GreenLine Power Factor Controller http://onsemi.com MARKING DIAGRAMS 16 DIP–16 P SUFFIX CASE 648 16 MC33368P AWLYYWW 1 16 1 SO–16 D SUFFIX CASE 751K 16 1 A WL YY, Y WW MC33368D AWLYWW 1 = Assembly Location = Wafer Lot = Year = Work Week	Original	PDF	MC33368 MC33368 r14525 MC33368/D EE25 transformer EE42 core EE42/15 1N4006 1N4744 1N4934 MC33368D MC33368DR2 MC33368P
transistor mosfet buv18a Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9	Original	PDF
mgb20n40cl Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to	Original	PDF	smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V

1N4006 Abstract: 1N4744 1N4934 MC33368 MC33368D MC33368P MTP8N50E MUR130 Motorola BOOST smps 4023 nOR gate Text: Order this document by MC33368/D MC33368 Advance Information High Voltage GreenLine Power Factor Controller The MC33368 is an active power factor controller that functions as a boost preconverter in off–line power supply applications. MC33368 is optimized for low power, high density power supplies requiring a minimum	Original	PDF	MC33368/D MC33368 MC33368 1N4006 1N4744 1N4934 MC33368D MC33368P MTP8N50E MUR130 Motorola BOOST smps 4023 nOR gate
1n5406 MOTOROLA Abstract: No abstract text available Text: MC33368 Advance Information High Voltage GreenLine Power Factor Controller HIGH VOLTAGE GREENLINE POWER FACTOR CONTROLLER The MC33368 is an active power factor controller that functions as a boost preconverter in off–line power supply applications. MC33368 is	Original	PDF	MC33368 MC33368 1n5406 MOTOROLA
EE42 core Abstract: EE42 SWITCHING POWER TRANSFORMER EE42/15 ac step-up transformer winding awg MC33368-D transformer ee4215 505 transistor MC33368D EE25 transformer MC33368P Text: MC33368 High Voltage GreenLine Power Factor Controller http://onsemi.com MARKING DIAGRAMS 16 DIP–16 P SUFFIX CASE 648 16 MC33368P AWLYYWW 1 16 1 SO–16 D SUFFIX CASE 751K 16 1 A WL YY, Y WW MC33368D AWLYWW 1 = Assembly Location = Wafer Lot = Year = Work Week	Original	PDF	MC33368 MC33368 r14525 MC33368/D EE42 core EE42 SWITCHING POWER TRANSFORMER EE42/15 ac step-up transformer winding awg MC33368-D transformer ee4215 505 transistor MC33368D EE25 transformer MC33368P
NTP3055AV Abstract: NTP3055 irf630 irf640 MTP5P25 IRF540 MTB1306 MTB3N100ET4 MTB3N60ET4 0708B MTP6N60E equivalent Text: PRODUCT / PROCESS CHANGE NOTIFICATION UPDATE Generic Copy 08-DEC-2000 SUBJECT: Update Notification #10395 TITLE: Modification To PCN #10344 EFFECTIVE DATE: 17-Mar-2001 AFFECTED CHANGE CATEGORY S : Subcontractor Assembly Site Subcontractor Test Site Assembly Process	Original	PDF	08-DEC-2000 17-Mar-2001 S21431 RYFV70 MTB8N50E MTB8N50ET4 MTP10N10E MTP10N10EL MTP10N40E MTP12N10E NTP3055AV NTP3055 irf630 irf640 MTP5P25 IRF540 MTB1306 MTB3N100ET4 MTB3N60ET4 0708B MTP6N60E equivalent
IRF9310 Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional	Original	PDF	device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
transistor Electronic ballast "INDUCTION LAMP" Abstract: schematic diagram Electronic Ballast HID AN1049 magnetic amplifier saturable core electronic ballast for fluorescent lighting t8 dimmable Fluorescent BALLAST an1543 Saturable Core Square Wave Oscillator induction lamp ballast schematic hid lamp ballast Text: AN1543/D Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse http://onsemi.com APPLICATION NOTE ABSTRACT c. Assure that the circuit will remain stable, even under fault conditions.	Original	PDF	AN1543/D r14525 transistor Electronic ballast "INDUCTION LAMP" schematic diagram Electronic Ballast HID AN1049 magnetic amplifier saturable core electronic ballast for fluorescent lighting t8 dimmable Fluorescent BALLAST an1543 Saturable Core Square Wave Oscillator induction lamp ballast schematic hid lamp ballast
N-Channel JFET FETs Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17 Text: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are	Original	PDF	O-226AA O-220AB MTP6P20E MTP12P10 OT-223) MTP50P03HDL MMFT960T1 FT960 N-Channel JFET FETs Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTP8N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP8N50E TMOS E-FET ™ Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n	OCR Scan	PDF	MTP8N50E/D TP8N50E
221A-06 Abstract: AN569 MTP8N50E Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E-FET ™ High Energy Power FET MTP8N50E N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS on = °-8 OHM T h is a d va n ce d high vo lta g e T M O S E -F E T is d e sig n e d to	OCR Scan	PDF
MTA5N50E Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA5N50E Fully Isolated T M O S E-FET ™ Power Field Effect TVansistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is high vo lta g e M O S F E T uses an ad v a n c e d te rm in a tio n	OCR Scan	PDF	MTA5N50E AN1040. b3b725M MTA5N50E

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MTP8N50E Price and Stock

Rochester Electronics LLC MTP8N50E

Aptina Imaging MTP8N50E

Motorola Semiconductor Products MTP8N50E

onsemi MTP8N50E

MTP8N50E Datasheets (7)

MTP8N50E Datasheets Context Search

NT 407 F MOSFET TRANSISTOR

MTP8N50E

MTP8N50E

Untitled

MC68B21CP

SO20N

mosfet cross reference

zvt boost converter

fqp60n06

transistor Electronic ballast "INDUCTION LAMP"

Epcos n67 material

MC33368

transistor mosfet buv18a

mgb20n40cl

1N4006

1n5406 MOTOROLA

EE42 core

NTP3055AV

IRF9310

transistor Electronic ballast "INDUCTION LAMP"

N-Channel JFET FETs

Untitled

221A-06

MTA5N50E