MTP1N80E Search Results

MTP1N80E Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MTP1N80E		On Semiconductor	TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate		Original	PDF
MTP1N80E		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
MTP1N80E/D		On Semiconductor	TMOS POWER FET 1.0 AMPERES 800 VOLTS		Original	PDF
MTP1N80E/D		On Semiconductor	TMOS POWER FET 1.0 AMPERES 800 VOLTS		Original	PDF

MTP1N80E Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTP1N80E CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:	Original	PDF	MTP1N80E O-220
AN569 Abstract: MTP1N80E Text: MOTOROLA Order this document by MTP1N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP1N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination	Original	PDF	MTP1N80E/D MTP1N80E MTP1N80E/D* AN569 MTP1N80E
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	PDF	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
SSH6N80 Abstract: ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020 Text: STI Type: MTM8N55 Notes: Breakdown Voltage: 550 Continuous Current: 8 RDS on Ohm: .50 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.5 Gate Threshold min: Gate Threshold max: Resistance Switching ton: 70 Resistance Switching toff: 430 Resistance Switching ID: 4.0	Original	PDF	MTM8N55 O-204AA/TO-3 MTM8N60 MTM8N40 O-262/I-2 SSI2N60B SSI4N60B SSH6N80 ptc6063 equivalent MTW15N25E SPA08N80C3 NTE2393 NTE99 SE7055 MTP4N90 SK3024 se5020
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MTP1N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N80E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination	OCR Scan	PDF	MTP1N80E/D TP1N80E parti19 21A-06
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet TM O S E -FE T P ow er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 0H M S T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te rm in a tio n	OCR Scan	PDF	TP1N80E