Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MRF900 Search Results

    SF Impression Pixel

    MRF900 Price and Stock

    Freescale Semiconductor MRF9002NR2

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MRF9002NR2 755
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Rochester Electronics MRF9002NR2 6 1
    • 1 $16.18
    • 10 $16.18
    • 100 $15.21
    • 1000 $13.75
    • 10000 $13.75
    Buy Now

    MRF900 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF9002NR2 Freescale Semiconductor RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET Original PDF
    MRF9002NR2 Freescale Semiconductor RF FETs, Discrete Semiconductor Products, MOSFET RF N-CHAN 26V 2W 16-PFP Original PDF
    MRF9002R2 Motorola RF Power Field Effect Transistor Array Original PDF
    MRF9002R2 Motorola RF Power Field Effect Transistor Array Original PDF
    MRF9002RS Motorola RF POWER FIELD EFFECT TRANSISTOR ARRAY Original PDF

    MRF900 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF9002NR2

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


    Original
    PDF MRF9002R2 MRF9002NR2 PFP-16

    J133 mosfet transistor

    Abstract: mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make


    Original
    PDF MRF9002R2 MRF9002R2 J133 mosfet transistor mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15

    ON SEMICONDUCTOR J122

    Abstract: MRF9002NR2
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


    Original
    PDF MRF9002NR2 PFP-16 MRF9002R2 MRF9002R2 ON SEMICONDUCTOR J122

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device make


    Original
    PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D

    MRF9002NR2

    Abstract: marking us capacitor pf l1 marking Z4 A113 RO4350 transistor A113
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 N - Channel Enhancement - Mode Lateral MOSFET MRF9002NR2 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device


    Original
    PDF MRF9002NR2 MRF9002NR2 marking us capacitor pf l1 marking Z4 A113 RO4350 transistor A113

    J133 mosfet transistor

    Abstract: transistor j239 MRF9002NR2 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002R2 Rev. 6, 7/2005 Will be replaced by MRF9002NR2 in Q305. N suffix indicates 260°C reflow capable. The PFP-16 package has had lead-free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


    Original
    PDF MRF9002R2 MRF9002NR2 PFP-16 J133 mosfet transistor transistor j239 ON SEMICONDUCTOR J122 transistor marking z9 J122 MARKING J133 transistor MRF9002R2 RO4350 mosfet j133

    motorola MOSFET 935

    Abstract: J133 mosfet transistor transistor 955 MOTOROLA sps transistor
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make


    Original
    PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola MOSFET 935 J133 mosfet transistor transistor 955 MOTOROLA sps transistor

    motorola rf Power Transistor

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET


    Original
    PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola rf Power Transistor

    MRF9002NR2

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial applications with frequen- cies to 1000 MHz. The high gain and broadband performance of this device


    Original
    PDF MRF9002NR2 PFP-16 MRF9002NR2

    J133 mosfet transistor

    Abstract: ON SEMICONDUCTOR J122 MRF9002R2 transistor a113 a113 transistor marking transistor RF
    Text: MRF9002R2 Rev. 5, 1/2005 Freescale Semiconductor Technical Data Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


    Original
    PDF MRF9002NT1 MRF9002R2 MRF9002R2 J133 mosfet transistor ON SEMICONDUCTOR J122 transistor a113 a113 transistor marking transistor RF

    J133 mosfet transistor

    Abstract: transistor 955 MOTOROLA
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device make


    Original
    PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D J133 mosfet transistor transistor 955 MOTOROLA

    transistor A113

    Abstract: a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
    Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


    Original
    PDF MRF9002NT1 MRF9002R2 MRF9002R2 transistor A113 a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table

    J133 mosfet transistor

    Abstract: transistor j239 J143 MOSFET J239 mosfet transistor J104 MOSFET J122 transistor mosfet j133 J133 MOSFET J133 transistor J239 TRANSISTOR
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array MRF9002R2 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make


    Original
    PDF MRF9002R2 MRF9002R2 J133 mosfet transistor transistor j239 J143 MOSFET J239 mosfet transistor J104 MOSFET J122 transistor mosfet j133 J133 MOSFET J133 transistor J239 TRANSISTOR

    MRF9002NR2

    Abstract: A113 RO4350 mosfet j133 j239 J122 MARKING
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 8, 5/2006 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device


    Original
    PDF MRF9002NR2 MRF9002NR2 A113 RO4350 mosfet j133 j239 J122 MARKING

    power transistor unit j122

    Abstract: MRF9002NR2
    Text: Freescale Semiconductor Technical Data Document Number: MRF9002NR2 Rev. 7, 7/2005 RF Power Field Effect Transistor Array N -Channel Enhancement-Mode Lateral MOSFET MRF9002NR2 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device


    Original
    PDF MRF9002NR2 MRF9002NR2 power transistor unit j122

    MRF9002NR2

    Abstract: RO4350 J104 J158
    Text: Document Number: MRF9002NR2 Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor Array MRF9002NR2 Designed for broadband commercial and industrial applications with frequen- cies to 1000 MHz. The high gain and broadband performance of this device


    Original
    PDF MRF9002NR2 PFP-16 MRF9002NR2 RO4350 J104 J158

    J133 mosfet transistor

    Abstract: transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL


    Original
    PDF MRF9002R2/D MRF9002R2 J133 mosfet transistor transistor j239 motorola MOSFET 935 ON SEMICONDUCTOR J122 985 transistor A113 MRF9002R2 RO4350 mosfet j133 MOTOROLA TRANSISTOR 935

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original
    PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    TRANSISTOR REPLACEMENT GUIDE

    Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
    Text: Quarter 4, 2004 SG1009Q42004 Rev 0 What’s New! Market Product 900 MHz Cellular Base Station MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 CDMA 1.9 GHz Cellular Base Station


    Original
    PDF SG1009Q42004 MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, TRANSISTOR REPLACEMENT GUIDE FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original
    PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Section Two Motorola RF Transistors – Data Sheets Device Number Page Number Device Number Page Number MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–3 MRF9085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–181


    Original
    PDF MBC13900 MRF281SR1 MRF281ZR1 MRF282SR1 MRF282ZR1 MRF284 MRF284SR1 MRF21090S MRF21120 MRF21120S

    MOTOROLA SCR 1725

    Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
    Text: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1


    Original
    PDF DL110/D MOTOROLA SCR 1725 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


    Original
    PDF CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10