MRF8P20140WHSR3 Search Results

MRF8P20140WHSR3 Price and Stock

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NXP Semiconductors MRF8P20140WHSR3 RF MOSFET LDMOS 28V NI780
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Newark	MRF8P20140WHSR3	Bulk			250	1 - 10 - 100 $60.14 1000 $60.14 10000 $60.14	Buy Now
Rochester Electronics	MRF8P20140WHSR3		250		1	1 $70.13 10 $70.13 100 $65.92 1000 $59.61 10000 $59.61	Buy Now

MRF8P20140WHSR3 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MRF8P20140WHSR3		Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, FET RF LDMOS 28V 500MA NI780S-4		Original	PDF

MRF8P20140WHSR3 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MRF8P20140WH/HS Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WH/HS
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
MMZ20363B Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless	Original	PDF
MRF8P20140WHS Abstract: mrf8p20140 J473 MRF8P20140W Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WHS mrf8p20140 J473 MRF8P20140W