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    MOTOROLA 2N2369 LOW NOISE AMPLIFIER Search Results

    MOTOROLA 2N2369 LOW NOISE AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MOTOROLA 2N2369 LOW NOISE AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2369 AVALANCHE PULSE GENERATOR

    Abstract: 2N2369 transistor pulse generator 2n2369 avalanche Avalanche Transistor Circuits for Generating nanosecond pulse generator Avtech PICO Electronics 1000V TD1110C ten pao transformer 2N2501
    Text: Application Note 94 May 2003 Slew Rate Verification for Wideband Amplifiers The Taming of the Slew Jim Williams INTRODUCTION Slew rate defines an amplifier’s maximum rate of output excursion. This specification sets limits on undistorted bandwidth, an important capability in A/D driver applications. Slew rate also influences achievable performance in


    Original     		PDF AN94-11 AN94-12 an94f 2N2369 AVALANCHE PULSE GENERATOR 2N2369 transistor pulse generator 2n2369 avalanche Avalanche Transistor Circuits for Generating nanosecond pulse generator Avtech PICO Electronics 1000V TD1110C ten pao transformer 2N2501

    lm2311

    Abstract: 2N3546 PN2369 EQUIVALENT 2N3639 4N32 pinout "1N6263" AM79865 1N6263 2N2369 C6 FTP
    Text: Advanced Micro Devices FDDI on Copper with AMD PHY Components by Eugen Gershon Publication # 15923 Rev. Amendment A /0 Issue Date 6/91  1991 Advanced Micro Devices, Inc. FDDI on Copper with AMD PHY Components by Eugen Gershon and pin-out compatible with the MIC device found on


    Original     		PDF 6011A) solutiAm79866 LM361 1N6263 Am79865 5923A-007A lm2311 2N3546 PN2369 EQUIVALENT 2N3639 4N32 pinout "1N6263" 1N6263 2N2369 C6 FTP

    2N2369 avalanche

    Abstract: 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA P-6056 CTX-02-16004 motorola transistor handbook 2N3866 application note crystal generator 1GHz
    Text: Application Note 122 January 2009 Diode Turn-On Time Induced Failures in Switching Regulators Never Has so Much Trouble Been Had By so Many with so Few Terminals Jim Williams David Beebe Introduction A potential difficulty due to diode turn-on time is that


    Original     		PDF AN122 350ps an122f AN122-19 AN122-20 2N2369 avalanche 2N2369 transistor pulse generator 2N2369 AVALANCHE PULSE GENERATOR Tektronix P6056 2N2501 MOTOROLA P-6056 CTX-02-16004 motorola transistor handbook 2N3866 application note crystal generator 1GHz

    48v regulator by lm317

    Abstract: diagram an 7522 MBRS1100 10V30V smd transistor 847 lm317 substitution TPSD107M010R0080 sepic DO3316P-224 LT1676
    Text: DESIGN FEATURES Wide Input Range, High Efficiency Step-Down Switching Regulators by Jeff Schenkel Introduction The LT1676 and LT1776 are Linear Technology’s latest offerings for high efficiency step-down switching regulator applications. These two parts


    Original     		PDF LT1676 LT1776 frequencies--100kHz 200kHz LT1776. 700mA, 500m1675; 100MHz LT1675 48v regulator by lm317 diagram an 7522 MBRS1100 10V30V smd transistor 847 lm317 substitution TPSD107M010R0080 sepic DO3316P-224

    AN72

    Abstract: AN72F PM-5771 2N2369 avalanche an7212 2N2369 AVALANCHE PULSE GENERATOR an7210 application circuits of ic 74121 LM733 2tx-849
    Text: Application Note 72 May 1998 A Seven-Nanosecond Comparator for Single Supply Operation Guidance for Putting Civilized Speed to Work Jim Williams INTRODUCTION In 1985 Linear Technology Corporation introduced the LT 1016 Comparator. This device was the first readily


    Original     		PDF LT1016 LT1016, LT1394, AN72-41 90VDC AN72-42 V-to-90V AN72-43 AN72-44 an72f AN72 PM-5771 2N2369 avalanche an7212 2N2369 AVALANCHE PULSE GENERATOR an7210 application circuits of ic 74121 LM733 2tx-849

    lt1149

    Abstract: No abstract text available
    Text: LT1676 Wide Input Range, High Efficiency, Step-Down Switching Regulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Wide Input Range: 7.4V to 60V 700mA Peak Switch Current Rating Adaptive Switch Drive Maintains Efficiency at High Load Without Pulse Skipping at Light Load


    Original     		PDF LT1676 700mA 100kHz 250kHz 500kHz LT1375) LT1620 LT1776 LT1676 200kHz lt1149

    LT1149

    Abstract: smd transistor g11 LT1676 LT1676C LT1676CN8 LT1676CS8 LT1676I LT1676IN8 LT1676IS8 MBR160
    Text: LT1676 Wide Input Range, High Efficiency, Step-Down Switching Regulator U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Wide Input Range: 7.4V to 60V 700mA Peak Switch Current Rating Adaptive Switch Drive Maintains Efficiency at High Load Without Pulse Skipping at Light Load


    Original     		PDF LT1676 700mA 100kHz 250kHz incl1375/LT1376 500kHz LT1375) LT1620 LT1776 LT1676 LT1149 smd transistor g11 LT1676C LT1676CN8 LT1676CS8 LT1676I LT1676IN8 LT1676IS8 MBR160

    2n5210 equivalent

    Abstract: replacement 2N5210 BC237 transistor BC107 specifications
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5209 2N5210 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage VCBO 50 Vdc Emitter – Base Voltage


    Original     		PDF 2N5209 2N5210 226AA) U218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 2n5210 equivalent replacement 2N5210 BC237 transistor BC107 specifications

    2N2369 Spice

    Abstract: HP355C 2N2369 AVALANCHE PULSE GENERATOR CA3039 2N2369 avalanche HP1120A nanosecond pulse stretcher tektronix scope tip jack nanosecond pulse generator Avalanche Transistor Circuits for Generating
    Text: Application Note 79 September 1999 30 Nanosecond Settling Time Measurement for a Precision Wideband Amplifier Quantifying Prompt Certainty Jim Williams Introduction Instrumentation, waveform generation, data acquisition, feedback control systems and other application areas


    Original     		PDF AN79-31 AN79-32 an79f 2N2369 Spice HP355C 2N2369 AVALANCHE PULSE GENERATOR CA3039 2N2369 avalanche HP1120A nanosecond pulse stretcher tektronix scope tip jack nanosecond pulse generator Avalanche Transistor Circuits for Generating

    16f73

    Abstract: 74ACH14 cd4040 application note 16f73 rs232 LT1150 74ACH74 LSK389 equivalent 2N2369 avalanche 2N2369 AVALANCHE PULSE GENERATOR Notebook lcd inverter schematic
    Text: Application Note 113 August 2007 Power Conversion, Measurement and Pulse Circuits Tales From the Laboratory Notebook, 2005-2007 Jim Williams INTRODUCTION This ink marks LTC’s eighth circuit collection publication.1 We are continually surprised, to the point of near mystification, by these circuit amalgams seemingly limitless


    Original     		PDF an113f AN113-19 AN113-20 16f73 74ACH14 cd4040 application note 16f73 rs232 LT1150 74ACH74 LSK389 equivalent 2N2369 avalanche 2N2369 AVALANCHE PULSE GENERATOR Notebook lcd inverter schematic

    2n5462 replacement

    Abstract: motorola JFET 2N3819 bf245 equivalent transistor equivalent 2n5551 2N5461 replacement transistor equivalent book 2N5401 BC237 EQUIVALENT TRANSISTOR bc109c 2N2222, 2N2222A J-FET 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers P–Channel — Depletion 2N5460 2N5461 2N5462 2 DRAIN 3 GATE 1 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IG f 10 mAdc Total Device Dissipation @ TA = 25°C


    Original     		PDF 2N5460 2N5461 2N5462 226AA) V218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n5462 replacement motorola JFET 2N3819 bf245 equivalent transistor equivalent 2n5551 2N5461 replacement transistor equivalent book 2N5401 BC237 EQUIVALENT TRANSISTOR bc109c 2N2222, 2N2222A J-FET 2N3819

    transistor marking wt

    Abstract: motorola application note AN-569 modes of operation of transistor BC177 BC237 hie for bc547b 2N2222 MPS2222 npn transistor BC547 collector characteristic curve 2n3819 equivalent transistor MOTOROLA TRANSISTOR 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors COLLECTOR 3 NPN MPS6521* PNP MPS6523 2 BASE 1 EMITTER COLLECTOR 3 Voltage and current are negative for PNP transistors 2 BASE *Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage


    Original     		PDF MPS6521* MPS6523 MPS6521 MPS6523 CAS218A MSC1621T1 MSC2404 MSD1819A transistor marking wt motorola application note AN-569 modes of operation of transistor BC177 BC237 hie for bc547b 2N2222 MPS2222 npn transistor BC547 collector characteristic curve 2n3819 equivalent transistor MOTOROLA TRANSISTOR 2N3819

    BC237

    Abstract: MPS-A70 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage


    Original     		PDF MPSA70 226AA) CHARACTERI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MPS-A70 equivalent

    BC237

    Abstract: transistor bc107b equivalent BC107B, MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA20 NPN Silicon COLLECTOR 3 2 BASE 1 2 1 EMITTER 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage


    Original     		PDF MPSA20 226AA) CHARAC218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 transistor bc107b equivalent BC107B, MOTOROLA

    symbol transistor BC108

    Abstract: BC108 characteristic j310 replacement BC237 J309 X2 dpak U310 transistor based class A amplifier lab motorola JFET 2N3819 JFET 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion J308 J309 1 DRAIN J310 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Gate–Source Voltage VGS


    Original     		PDF 226AA) V218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 symbol transistor BC108 BC108 characteristic j310 replacement BC237 J309 X2 dpak U310 transistor based class A amplifier lab motorola JFET 2N3819 JFET 2N3819 MOTOROLA

    BC237

    Abstract: BF245 marking code M2 SOT23 BC547 collector characteristic curve 2n3053 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Amplifiers BFR30LT1 BFR31LT1 N–Channel 2 SOURCE 3 3 GATE 1 2 1 DRAIN CASE 318 – 08, STYLE 10 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Gate – Source Voltage


    Original     		PDF BFR30LT1 BFR31LT1 236AB) BFR30LT1 CHAR218A MSC1621T1 MSC2404 MSD1819A MV1620 BC237 BF245 marking code M2 SOT23 BC547 collector characteristic curve 2n3053 replacement

    TO-226-AE

    Abstract: BC108 characteristic JFET BF245 BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion 2N5484 1 DRAIN 2N5486 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25°C


    Original     		PDF 2N5484 2N5486 226AA) V218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 TO-226-AE BC108 characteristic JFET BF245 BC237

    BC237

    Abstract: S11S C4 SOT-323
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N–Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc


    Original     		PDF MMBF4416LT1 236AB) Cha218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237 S11S C4 SOT-323

    MMBF4856

    Abstract: BC237 bf244 BC177 pnp transistor BF245 motorola MMBT8599L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor MPQ3906 PNP Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage


    Original     		PDF MPQ3906 Therm218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MMBF4856 BC237 bf244 BC177 pnp transistor BF245 motorola MMBT8599L

    BC237

    Abstract: transistor BC108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor P2N2907A PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –60 Vdc Collector – Base Voltage VCBO –60 Vdc Emitter – Base Voltage


    Original     		PDF P2N2907A 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 transistor BC108

    hie for bc547b

    Abstract: bc109 2n2222a SOT223 BC237 MPS3563 2N2904 BF256 BSS89 APPLICATION BCY72 mps5771
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPS6428 NPN Silicon COLLECTOR 3 2 BASE 1 1 EMITTER 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 50 Vdc Collector – Base Voltage


    Original     		PDF MPS6428 226AA) Unit218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 hie for bc547b bc109 2n2222a SOT223 BC237 MPS3563 2N2904 BF256 BSS89 APPLICATION BCY72 mps5771

    bf244

    Abstract: MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion J304 1 DRAIN 3 GATE 2 SOURCE 1 2 3 CASE 29–04, STYLE 5 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 30 Vdc Gate–Source Voltage


    Original     		PDF 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 bf244 MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819

    mps6652 equivalent

    Abstract: BC237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN MPS6601 MPS6602* PNP MPS6651 MPS6652* COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP 1 EMITTER 1 EMITTER Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Symbol Collector – Emitter Voltage


    Original     		PDF MPS6601 MPS6602* MPS6651 MPS6652* MPS6601/6651 MPS6602/6652 MSC1621T1 MSC2404 mps6652 equivalent BC237

    lt1149

    Abstract: No abstract text available
    Text: u r m TECHNOLOGY LT1676 W ide Input Range, High Efficiency, Step-Down Switching Regulator FEATURES DESCRIPTIOfl • Wide Input Range: 7.4V to 60V ■ 700mA Peak Switch Current Rating ■ Adaptive Switch Drive Maintains Efficiency at High Load Without Pulse Skipping at Light Load


    OCR Scan     		PDF LT1676 700mA 100kHz 250kHz LT1375) LT1620 LT1776 LT1676 200kHz LT1777 lt1149