Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET TRANSISTOR SMD MARKING CODE 11 Search Results

    MOSFET TRANSISTOR SMD MARKING CODE 11 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET TRANSISTOR SMD MARKING CODE 11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING CODE

    Abstract: 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode MOSFET marking smd on semiconductor marking code sot MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE
    Text: Discrete Semiconductor Sample Kit Low Power SMD Central Semiconductor Sample Kits provide designers with the discrete semiconductors ideally suited for the latest design challenges. The Low Power SMD Sample Kit includes a variety of diodes and MOSFETs suitable for general purpose


    Original     		PDF 100mA 200mA OD-323 CMDSH05-4 500mA OT-23 TRANSISTOR SMD MARKING CODE 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode MOSFET marking smd on semiconductor marking code sot MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMV32UP O-236AB)

    TRANSISTOR SMD MARKING CODE pa

    Abstract: smd transistor marking PA TRANSISTOR SMD MARKING CODE ce MOSFET TRANSISTOR C65 TRANSISTOR SMD CODE PACKAGE SOT363 MOSFET TRANSISTOR SMD MARKING CODE 7 MOSFET C65 TRANSISTOR SMD MARKING CODE 26 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE C65
    Text: PRODUCT announcement Multi Discrete Module in a SOT-563 features • Multiple devices in a single SMD package • Utilizes Basic Building Block BBB device combinations • Space saving/low profile SOT-563 SMD package Sample devices description Central Semiconductor is please to introduce Multi Discrete


    Original     		PDF OT-563 OT-563 CMLM0205: CMLM0405: CMLM0605: CMLM0705: CMLM2205: TRANSISTOR SMD MARKING CODE pa smd transistor marking PA TRANSISTOR SMD MARKING CODE ce MOSFET TRANSISTOR C65 TRANSISTOR SMD CODE PACKAGE SOT363 MOSFET TRANSISTOR SMD MARKING CODE 7 MOSFET C65 TRANSISTOR SMD MARKING CODE 26 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE C65

    6R950C6

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2.2, 2010-03-11 2013-07-31 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6


    Original     		PDF IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 6R950C6

    6r950c6

    Abstract: IPA60R950C6 IPP60R950C6 VDD480V IPB60R950C6 IPD60R950C6 JESD22 6r950c 6R950
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6


    Original     		PDF IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 6r950c6 IPA60R950C6 IPP60R950C6 VDD480V IPB60R950C6 IPD60R950C6 JESD22 6r950c 6R950

    6r950c6

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE 11 transistor 600v IPA60R950C6 IPB60R950C6 IPD60R950C6 IPP60R950C6 JESD22 to220 pcb footprint
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6


    Original     		PDF IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 6r950c6 MOSFET TRANSISTOR SMD MARKING CODE 11 transistor 600v IPA60R950C6 IPB60R950C6 IPD60R950C6 IPP60R950C6 JESD22 to220 pcb footprint

    6r950c6

    Abstract: 6R950
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6


    Original     		PDF IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 6r950c6 6R950

    Untitled

    Abstract: No abstract text available
    Text: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF NX3020NAKS OT363 SC-88)

    6r950c6

    Abstract: 6r950c IPx60R950C6 infineon marking TO-252 PG-TO263 IPD60R950C6 IPP60R950C6 Diode SMD SJ 19 6R950
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6


    Original     		PDF IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 726-IPB60R950C6 IPB60R950C6 6r950c6 6r950c IPx60R950C6 infineon marking TO-252 PG-TO263 IPD60R950C6 IPP60R950C6 Diode SMD SJ 19 6R950

    6R950C6

    Abstract: IPA60R950C6 IPB60R950C6 IPD60R950C6 IPP60R950C6 JESD22 infineon marking TO-252 IPx60R950C6 TRANSISTOR SMD MARKING g1
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R950C6 Data Sheet Rev. 2.1, 2010-03-11 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6


    Original     		PDF IPx60R950C6 IPD60R950C6, IPB60R950C6 IPP60R950C6, IPA60R950C6 6R950C6 IPA60R950C6 IPB60R950C6 IPD60R950C6 IPP60R950C6 JESD22 infineon marking TO-252 IPx60R950C6 TRANSISTOR SMD MARKING g1

    MOSFET TRANSISTOR SMD MARKING CODE 11

    Abstract: NXP SMD TRANSISTOR MARKING CODE s1
    Text: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMDXB600UNE DFN1010B-6 OT1216) MOSFET TRANSISTOR SMD MARKING CODE 11 NXP SMD TRANSISTOR MARKING CODE s1

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF NX7002BKXB DFN1010B-6 OT1216)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 PMDXB950UPE 20 V, dual P-channel Trench MOSFET 10 September 2013 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMDXB950UPE DFN1010B-6 OT1216)

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV16UN 20 V, 5.8 A N-channel Trench MOSFET Rev. 1 — 4 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMV16UN O-236AB)

    transistor smd code marking 420

    Abstract: No abstract text available
    Text: Product specification PMV30XN 20 V, 3.2 A N-channel Trench MOSFET Rev. 1 — 22 June 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMV30XN O-236AB) transistor smd code marking 420

    TRANSISTOR SMD MARKING CODE QR

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11
    Text: DF N2 020 -6 PMC85XP 30 V P-channel MOSFET with pre-biased NPN transistor 15 May 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in Trench MOSFET technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium


    Original     		PDF PMC85XP DFN2020-6 OT1118) TRANSISTOR SMD MARKING CODE QR MOSFET TRANSISTOR SMD MARKING CODE NA MOSFET TRANSISTOR SMD MARKING CODE 11

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV185XN O-236AB) gate-sou15

    TRANSISTOR SMD MARKING CODE 1 KW

    Abstract: No abstract text available
    Text: Product specification PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 — 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMV20XN O-236AB) TRANSISTOR SMD MARKING CODE 1 KW

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV48XP 20 V, 3.5 A P-channel Trench MOSFET Rev. 1 — 21 December 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMV48XP O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV170UN 20 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF PMV170UN O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original     		PDF PMV90EN O-236AB)

    NXP SMD TRANSISTOR MARKING CODE s1

    Abstract: No abstract text available
    Text: DF N2 020 -6 PMDPB760EN 100 V, dual N-channel Trench MOSFET 29 May 2013 Objective data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using


    Original     		PDF PMDPB760EN DFN2020-6 OT1118) NXP SMD TRANSISTOR MARKING CODE s1

    SMD transistor Marking 1x

    Abstract: No abstract text available
    Text: PMFPB8032XP 20 V, 3.7 A / 320 mV VF P-channel MOSFET-Schottky combination 21 December 2012 Product data sheet 1. General description Small-signal P-channel enhancement mode Field-Effect Transistor FET using Trench MOSFET technology and ultra low VF Maximum Efficiency General Application (MEGA)


    Original     		PDF PMFPB8032XP DFN2020-6 OT1118) SMD transistor Marking 1x