LM78L05
Abstract: LX1682 LX1684 LX1684CD LX1684CD-TR hard disk ATA pcb schematic simple 19v power supply
Text: LX1684 Voltage-Mode PWM Controller TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION Current is sensed using the voltage drop across the RDS ON of the MOSFET this sensing is delayed for 1µs to eliminate MOSFET ringing errors. Hiccup-mode fault protection reduces
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LX1684
LX1684.
14-pin
O-252
LM78L05
LX1682
LX1684
LX1684CD
LX1684CD-TR
hard disk ATA pcb schematic
simple 19v power supply
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Untitled
Abstract: No abstract text available
Text: Not Recommended For New Design LX1684 Voltage-Mode PWM Controller TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION Current is sensed using the voltage drop across the RDS ON of the MOSFET this sensing is delayed for 1µs to eliminate MOSFET ringing errors.
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LX1684
LX1684
175kHz
LX1682
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Untitled
Abstract: No abstract text available
Text: Not Recommended For New Design LX1684 Voltage-Mode PWM Controller TM P RODUCTION D ATA S HEET Current is sensed using the voltage drop across the RDS ON of the MOSFET this sensing is delayed for 1µs to eliminate MOSFET ringing errors. Hiccup-mode fault protection reduces
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LX1684
LX1684.
14-pin
O-252
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LM78L05
Abstract: LX1682 LX1684 LX1684CD MBR2545 SUB70N03-09BP voltage-mode pwm
Text: LX1684 L I N F I N I T Y Voltage-Mode PWM Controller D I V I S I O N P RODUCTION KEY FEATURES DESCRIPTION Current is sensed using the voltage drop across the RDS ON of the MOSFET this sensing is delayed for 1µs to eliminate MOSFET ringing errors. Hiccup-mode fault protection reduces
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LX1684
LX1684.
14-pin
O-252
LM78L05
LX1682
LX1684
LX1684CD
MBR2545
SUB70N03-09BP
voltage-mode pwm
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MOSFET SUB70N03
Abstract: SUB70N03-09BP SUB70N03-09BP SPICE Device Model
Text: SPICE Device Model SUP/SUB70N03-09BP Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET PWM Optimized CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application
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SUP/SUB70N03-09BP
0-to10V
02-Oct-01
MOSFET SUB70N03
SUB70N03-09BP
SUB70N03-09BP SPICE Device Model
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V D-S , 175°°C MOSFET PWM Optimized CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application
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SUP/SUB70N03-09P
05-Nov-98
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB70N03-09BP Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET PWM Optimized CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP/SUB70N03-09BP
gate-to-dr10
S-60545Rev.
10-Apr-06
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB70N03-09BP Vishay Siliconix N-Channel 30-V D-S , 175°C MOSFET PWM Optimized CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP/SUB70N03-09BP
18-Jul-08
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SUB70N03-09P
Abstract: SUB70N03-09
Text: SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "70a 0.015 @ VGS = 4.5 V "55 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09
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SUP/SUB70N03-09P
O-220AB
O-263
SUB70N03-09
SUP70N03-09
S-59917--Rev.
28-Sep-98
SUB70N03-09P
SUB70N03-09
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70821
Abstract: SUB70N03-09P SUB70N03-09
Text: SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "70a 0.015 @ VGS = 4.5 V "55 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09
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SUP/SUB70N03-09P
O-220AB
O-263
SUB70N03-09
SUP70N03-09
18-Jul-08
70821
SUB70N03-09P
SUB70N03-09
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S-20102
Abstract: SUB70N03-09BP SUP70N03-09BP MOSFET SUB70N03
Text: SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S
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SUP/SUB70N03-09BP
O-220AB
O-263
SUB70N03-09BP
SUP70N03-09BP
S-20102--Rev.
11-Mar-02
S-20102
SUB70N03-09BP
SUP70N03-09BP
MOSFET SUB70N03
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SUB70N03-09BP
Abstract: No abstract text available
Text: SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S
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SUP/SUB70N03-09BP
O-220AB
O-263
SUP70N03-09BP
SUB70N03-09BP
08-Apr-05
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SUP70N03-09BP
Abstract: SUB70N03-09BP
Text: SUP/SUB70N03-09BP New Product Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 70a 0.013 @ VGS = 4.5 V 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S
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SUP/SUB70N03-09BP
O-220AB
O-263
SUB70N03-09BP
SUP70N03-09BP
S-01237--Rev.
12-Jun-00
SUP70N03-09BP
SUB70N03-09BP
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sub70n03
Abstract: No abstract text available
Text: SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "70a 0.015 @ VGS = 4.5 V "55 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09
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SUP/SUB70N03-09P
O-220AB
O-263
SUP70N03-09
SUB70N03-09
08-Apr-05
sub70n03
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Untitled
Abstract: No abstract text available
Text: SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.009 @ VGS = 10 V "70a 0.015 @ VGS = 4.5 V "55 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB70N03-09
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SUP/SUB70N03-09P
O-220AB
O-263
SUP70N03-09
SUB70N03-09
08-Apr-05
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
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Si4831DY
Si4833DY
Si4852DY
Si4816DY
10Single
VN50300L
VN50300T
OT-23
VN66AFD
VN10KLS
mosfet bs250
Si4730
SUP85N03-04P
VN66AFD
Si4835DY
si5504
SI3459DV
sup65p06
sub75p05
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Untitled
Abstract: No abstract text available
Text: 19-2860; Rev 0; 4/03 4. 9m m -QSOP 16 m x 6m High-Speed, Dual-Phase Gate Driver for Multiphase, Step-Down Converters Each MOSFET driver in the MAX8523 is capable of driving 3000pF capacitive loads with only 15ns propagation delay and 11ns typical rise and fall times, allowing
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MAX8523
3000pF
16-pin
MAX8523
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IPV2
Abstract: pv charge controller circuit diagram 2XIRF7811W sub70n03 MAX8523 MAX8523EEE MAX8524 MAX8525
Text: 19-2860; Rev 0; 4/03 4. 9m m -QSOP 16 m x 6m High-Speed, Dual-Phase Gate Driver for Multiphase, Step-Down Converters Features ♦ 6A Peak Gate-Drive Current ♦ Up to 1.2MHz Operation ♦ Up to 6.5V Gate-Drive Voltage ♦ 0.5Ω/0.95Ω Low-Side Drivers ♦ Capable of 30A Output per Phase
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MAX8524
MAX8525
16-Pin
MAX8523EEE
MAX8523
IPV2
pv charge controller circuit diagram
2XIRF7811W
sub70n03
MAX8523
MAX8523EEE
MAX8525
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sud*50n025-06p
Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m
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VSA-SG0019-0310
sud*50n025-06p
SUD70N03-04P
SI9120
sum45n25
SI9119
Si7810DN
sud*50n025-09p
SI2301ADS
SI4732CY
si9110
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71917
Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller
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AN607
Si9137
SSOP-28
Si9910
Si9912
Si9913
10-Oct-02
71917
level logic mosfet transistor so-8
offline switchmode
si9110
siliconix an607
AN607
AN707
SI4406DY
PowerPAK SO-8
si2301ds
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LX1684CD-TR
Abstract: LM78L05 LX1682 LX1684 LX1684CD vishay power pak SO-8 package dimension MBR2545
Text: LX1684 Voltage-Mode PWM Controller TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION Fixed 175kHz Switching Frequency Constant Frequency VoltageMode Control Requires No External Compensation Hiccup-Mode Over-Current Protection High Efficiency
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LX1684
175kHz
14-pin
LX1684CD-TR
LM78L05
LX1682
LX1684
LX1684CD
vishay power pak SO-8 package dimension
MBR2545
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sub70n03
Abstract: L6919C L6919CD L6919CDTR smd diode S4 6A
Text: L6919C 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENT • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT
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L6919C
200kHz
SO-28
sub70n03
L6919C
L6919CD
L6919CDTR
smd diode S4 6A
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Untitled
Abstract: No abstract text available
Text: L6919C 5 BIT PROGRAMMABLE DUAL-PHASE CONTROLLER WITH DYNAMIC VID MANAGEMENT • 2 PHASE OPERATION WITH SYNCRHONOUS RECTIFIER CONTROL ULTRA FAST LOAD TRANSIENT RESPONSE INTEGRATED HIGH CURRENT GATE DRIVERS: UP TO 2A GATE CURRENT TTL-COMPATIBLE 5 BIT PROGRAMMABLE
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L6919C
200kHz
SO-28
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SUB70N03-09P
Abstract: 70604
Text: SUP/SUB70N03-09P VISHAY Vishay Siliconix Y N-Ch 30-V D-S , 175°C, MOSFET PWM Optimized New Product PRO DUCT SUM M ARY R o s (o m ) (£2) ID (A) 0.009 VG S = 10 V ±70* 0.015 © V q s » 4.5 V ±55 V (BR}DM M 30 D O TO-220AB o TO-263 ì I— w DRAIN connected to TAB
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SUP/SUB70N03-09P
O-220AB
O-263
SUP70N03-09
SUB70N03-09
S-58547--Rev.
26-Oct
SUP/SUB45N03-13L
S-58547--
SUB70N03-09P
70604
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