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    MOSFET P-CHANNEL 300V Search Results

    MOSFET P-CHANNEL 300V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET P-CHANNEL 300V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT-23 MOSFET P-CHANNEL a1 1- mark

    Abstract: L21e
    Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFET. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener


    Original     		PDF LP1030D LP1030D DSFP-LP1030D NR011613 SOT-23 MOSFET P-CHANNEL a1 1- mark L21e

    MCH6634

    Abstract: No abstract text available
    Text: MCH6634 Ordering number : EN8229A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance


    Original     		PDF MCH6634 EN8229A MCH6634

    mark G1 SOT-23

    Abstract: sot-23 MARKING CODE G1 G1 SOT23 sot-23 MARKING CODE IGs DSPD-5SOT23K1 LP1030
    Text: Supertex inc. LP1030D 300V, Dual P-Channel Enhancement-Mode Lateral MOSFET Features General Description The LP1030D is a dual high voltage P-channel enhancementmode normally-off lateral MOSFETs. Each MOSFET has integrated gate-to-source resistor and gate-to-source Zener


    Original     		PDF LP1030D LP1030D DSFP-LP1030D NR101512 mark G1 SOT-23 sot-23 MARKING CODE G1 G1 SOT23 sot-23 MARKING CODE IGs DSPD-5SOT23K1 LP1030

    Untitled

    Abstract: No abstract text available
    Text: MCH6634 Ordering number : EN8229A N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.


    Original     		PDF EN8229A MCH6634 MCH6634

    MCH6634

    Abstract: No abstract text available
    Text: MCH6634 Ordering number : ENN8229 N-Channel and P-Channel Silicon MOSFETs MCH6634 General-Purpose Switching Device Applications Features • • • • The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.


    Original     		PDF MCH6634 ENN8229 MCH6634

    7P30L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 7P30 POWER MOSFET 6.0A, 300V, SWITCHING P-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7P30 is a P-channel MOS Field Effect Transistor. it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.


    Original     		PDF 7P30L-TA3-T 7P30G-TA3-T O-220 QW-R502-918 7P30L

    circuit diagram of mosfet based smps power supply

    Abstract: FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel
    Text: Intelligent Power Switch Integrates Low Current IC and P-Channel MOSFET for Slew Rate Control www.fairchildsemi.com/whats_new/fdc6901l_nph.html The FDC6901L is a one-of-a-kind power switch integrating an advanced Trench technology P-Channel MOSFET with a slew rate controller IC. The


    Original     		PDF new/fdc6901l FDC6901L FDJ129P Power247TM, circuit diagram of mosfet based smps power supply FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel

    p-channel mosfet

    Abstract: DIODE 240v 3a KQS4900 logic level n channel MOSFET P Channel Low Gate Charge mosfet p-channel 300v
    Text: IC IC SMD Type Dual N & P-Channel, Logic Level MOSFET KQS4900 Features N-Channel 1.3 A, 60 V RDS ON = 0.55 RDS(ON) = 0.65 @ VGS = 10 V @ VGS =5V P-Channel -0.3 A, -300V RDS(ON) = 15.5 RDS(ON) = 16 @ VGS =- 10V @ VGS =-5V Low gate charge ( typical N-Channel 1.6 nC)


    Original     		PDF KQS4900 -300V p-channel mosfet DIODE 240v 3a KQS4900 logic level n channel MOSFET P Channel Low Gate Charge mosfet p-channel 300v

    Untitled

    Abstract: No abstract text available
    Text: FQS4900 August 2000 QFET TM FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQS4900 -300V, FQS4900 FQS4900TF

    Dual N P-Channel

    Abstract: FQS4900
    Text: FQS4900 August 2000 QFET TM FQS4900 Dual N & P-Channel, Logic Level MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQS4900 -300V, Dual N P-Channel FQS4900

    SCH2301

    Abstract: No abstract text available
    Text: SCH2301 Ordering number : EN8974 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2301 General-Purpose Switching Device Applications Features • • • • • The SCH2301 incorporates two elements in the same package which are P-channel MOSFETs, thereby enabling


    Original     		PDF SCH2301 EN8974 SCH2301

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60-P Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		PDF 6N60-P O-220F O-220 6N60-P O-220F1 O-220F2 O-263 O-251 O-252 QW-R502-969

    Untitled

    Abstract: No abstract text available
    Text: RY A IN CTLDM601N IM L RE P SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM601N is an enhancement-mode N-channel MOSFET designed for applications including high speed pulsed amplifiers


    Original     		PDF CTLDM601N CTLDM601N 100mA INCTLDM601N

    N and P MOSFET

    Abstract: No abstract text available
    Text: RY A IN CTLDM601N IM LSURFACE E MOUNT SILICON R P w w w. c e n t r a l s e m i . c o m N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM601N is a silicon N-channel enhancement-mode MOSFET designed for applications including high speed pulsed amplifiers


    Original     		PDF CTLDM601N CTLDM601N 100mA INCTLDM601N N and P MOSFET

    MCH6629

    Abstract: 8239 D1306
    Text: MCH6629 Ordering number : EN8239A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6629 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High ESD voltage TYP 300V


    Original     		PDF MCH6629 EN8239A MCH6629 8239 D1306

    MCH6629

    Abstract: 8239 D1306
    Text: MCH6629 Ordering number : EN8239A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6629 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. High ESD voltage TYP 300V


    Original     		PDF MCH6629 EN8239A MCH6629 8239 D1306

    SVDF8N60F

    Abstract: 8N60
    Text: 8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 8 AMPERES Description: The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF O-220 01-Apr-2011 O-220 O-220F O-220F 47MAX 75MAX SVDF8N60F 8N60

    ap0420

    Abstract: AP0432
    Text: A P04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package * t 700n -15mA -1 .5nA — AP0416NA AP0416WG AP0416ND -200V 600n -15mA — — AP0420NA — AP0420ND -300V


    OCR Scan     		PDF -160V -200V -300V -320V -400V -100V -250V 18-Lead AP0416NA AP0420NA ap0420 AP0432

    EIGHT p-channel MOSFET ARRAY

    Abstract: AP0116NA AP0116NB AP0116ND AP0116WG AP0120NA AP0120NB AP0120ND SOW-20
    Text: SUPERTEX INC Gl D e J fl773S‘lS_D0ai7b3 3 | ~ 8 Channel Power MOSFET Array Monolithic P-channel Enchancement Mode Ordering Information Order Number / Package BVDSS/ min ^DS(ON) (max) -160V -200V -300V -320V -400V 700n 600n 600n 700Q 700n SI b v dgs *DSS* @ ^DS =


    OCR Scan     		PDF fl773aiS -250V 18-Lead SOW-20* -160V -15mA AP0116NB AP0116NA AP0116WG EIGHT p-channel MOSFET ARRAY AP0116ND AP0120NA AP0120NB AP0120ND SOW-20

    Untitled

    Abstract: No abstract text available
    Text: fà k S u p e rte x AP0116 AP0132 AP0120 AP0140 AP0130 in c . 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information _ Order Number / Package BVqgs min 11 BVDS9/ ^DS(O N) (max) loss* VDS= -100V Max loss* ® Vos -2S0V Max


    OCR Scan     		PDF AP0116 AP0132 AP0120 AP0140 AP0130 -100V 18-Lead SOW-20* -160V -15mA

    EIGHT MOSFET ARRAY

    Abstract: EIGHT n-channel MOSFET ARRAY
    Text: A N 04 inc. G a te P ro te cte d Preliminary 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information Order Number / Package BVdss/ ^DS ON (min) 160V (max) 350n 200V 300V Plastic SOW-20* Diet — 18-Lead Plastic DIP AN0416NA AN0416WG


    OCR Scan     		PDF 18-Lead AN0416NA AN0420NA AN0430NA AN0432NA AN0440NA SOW-20* AN0416WG AN0416ND AN0420ND EIGHT MOSFET ARRAY EIGHT n-channel MOSFET ARRAY

    ap0140a

    Abstract: 8 Channel Power Mosfet Array
    Text: SUPERTEX INC Gl D e J fl773S‘lS_D0ai7b3 3 | ~ 8 Channel Power MOSFET Array Monolithic P-channel Enchancement Mode Ordering Information BVDSS/ ^D S O N (min) (max) 700n -160V -200V -300V -320V -400V 600n 600n 700Q 70 0n SI b v dgs @ ^DS -100 V Max *D SS*


    OCR Scan     		PDF fl773S` -160V -200V -300V -320V -400V 18-Lead AP0116NB AP0120NB AP0130NB ap0140a 8 Channel Power Mosfet Array

    Untitled

    Abstract: No abstract text available
    Text: AP0116 AP0132 AP0120 AP0140 mm_ 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package b v dss/ Plastic -250V Max Plastic DIP SOW-20* -1.5nA — AP0116NA AP0116W G AP0116ND -15mA — — AP0120NA — AP0120ND


    OCR Scan     		PDF AP0116 AP0132 AP0120 AP0140 18-Lead AP0116NA AP0120NA AP0130NA AP0132NA AP0140NA

    Untitled

    Abstract: No abstract text available
    Text: SUPERTEX INC blE » fiTTBE'îS DDDaSin 3T1 ISTX AP04 V . Supertex inc. G ate Protected Preliminary 8 Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package BVoss/ BVoos min RDS(ON) (max) •dcon) (min) loss” V|)S =


    OCR Scan     		PDF -100V -250V 18-Lead SOW-20* -160V -15mA AP0416NA AP0416WG AP0416ND -200V