JESD97
Abstract: S8C5H30L STS8C5H30L
Text: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced
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STS8C5H30L
STS8C5H30L
JESD97
S8C5H30L
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Untitled
Abstract: No abstract text available
Text: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced
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STS8C5H30L
STS8C5H30L
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JESD97
Abstract: S8C5H30L STS8C5H30L
Text: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/p-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET Features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced ■ Switching losses reduced
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STS8C5H30L
STS8C5H30L
JESD97
S8C5H30L
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTT8P03-H Power MOSFET -8A, -30V, P-CHANNEL MOSFET DESCRIPTION The UTC UTT8P03-H is a P-channel MOSFET. it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate charge.
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UTT8P03-H
UTT8P03-H
UTT8P03G-K08-3020-R
QW-R210-006
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4505ss
Abstract: A1770 24V 1A mosfet
Text: CYStech Electronics Corp. Spec. No. : C439Q8 Issued Date : 2009.02.19 Revised Date : Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4505Q8 BVDSS ID RDSON max N-CH 30V 10A 14mΩ P-CH -30V -8.4A 20mΩ Description The MTC4505Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8
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C439Q8
MTC4505Q8
MTC4505Q8
UL94V-0
4505ss
A1770
24V 1A mosfet
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apm4550
Abstract: APM4550J MOSFET N-CH 200V STD-020C Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A APM4550J MOSFET APM4550 dip8
Text: APM4550J Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 30V/8A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 30mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of DIP − 8 -30V/-7A, RDS(ON) = 40mΩ (typ.) @ VGS = -10V
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APM4550J
-30V/-7A,
MIL-STD-883D-2003
MIL-STD-883D-1005
JESD-22-B
MIL-STD-883D-1011
MIL-STD-883D-3015
100mA
apm4550
APM4550J
MOSFET N-CH 200V
STD-020C
Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
APM4550J MOSFET
APM4550 dip8
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APM4546J
Abstract: APM4546
Text: APM4546J Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 30V/8A, RDS(ON) =20mΩ (typ.) @ VGS = 10V RDS(ON) =24mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of PDIP − 8 -30V/-6A, RDS(ON) =38mΩ (typ.) @ VGS =-10V
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APM4546J
-30V/-6A,
MIL-STD-883D-2003
883D-1005
JESD-22-B,
883D-1011
APM4546J
APM4546
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TO-252-4L
Abstract: mtc210 To-252-4
Text: Spec. No. : C448J4 Issued Date : 2009.03.10 Revised Date : Page No. : 1/11 CYStech Electronics Corp. N & P-Channel Enhancement Mode Power MOSFET MTC2103BJ4 Features N-CH P-CH BVDSS 30V -30V ID 8A -6A 21mΩ 45mΩ RDSON MAX • Low Gate Charge • Simple Drive Requirement
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C448J4
MTC2103BJ4
O-252-4L
UL94V-0
TO-252-4L
mtc210
To-252-4
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APM4546
Abstract: APM4546J CH-140 P-Channel MOSFET code L 1A MS-001 STD-020C Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4
Text: APM4546J Dual Enhancement Mode MOSFET N-and P-Channel Pin Description Features • N-Channel 30V/8A, RDS(ON) =20mΩ (typ.) @ VGS = 10V RDS(ON) =27mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of PDIP − 8 -30V/-6A, RDS(ON) =38mΩ (typ.) @ VGS =-10V
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APM4546J
-30V/-6A,
MIL-STD-883D-2003
883D-1005
JESD-22-B,
883D-1011
APM4546
APM4546J
CH-140
P-Channel MOSFET code L 1A
MS-001
STD-020C
Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UT4435-H Power MOSFET -8A, -30V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT4435-H is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed, low gate charge and a minimum on-state
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UT4435-H
UT4435-H
UT4435G-S08-R
QW-R208-053
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Transistor Mosfet N-Ch 30V
Abstract: STS8C5H30L S8C5H30L P-CHANNEL
Text: STS8C5H30L N-CHANNEL 30V - 0.018Ω - 8A SO-8 P-CHANNEL 30V - 0.045Ω - 5A SO-8 LOW GATE CHARGE StripFET III MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STS8C5H30L (N-Channel) STS8C5H30L (P-Channel) 30 V 30 V < 0.022 Ω < 0.055 Ω
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STS8C5H30L
Transistor Mosfet N-Ch 30V
STS8C5H30L
S8C5H30L
P-CHANNEL
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AP4506
Abstract: No abstract text available
Text: AP4506GEH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D1/D2 30V RDS ON Good Thermal Performance Fast Switching Performance S1 24m ID G1 S2 9A P-CH BVDSS G2 -30V
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AP4506GEH
O-252-4L
100us
100ms
AP4506
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TH 2267
Abstract: 2502P 256P CBHK741B019 F63TNR FDW2502P FDW256P
Text: FDW256P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
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FDW256P
TH 2267
2502P
256P
CBHK741B019
F63TNR
FDW2502P
FDW256P
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TH 2267
Abstract: 256P FDW256P
Text: FDW256P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
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FDW256P
TH 2267
256P
FDW256P
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H9942
Abstract: FDW2502P 2502P 256P CBHK741B019 F63TNR FDW256P
Text: FDW256P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
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FDW256P
H9942
FDW2502P
2502P
256P
CBHK741B019
F63TNR
FDW256P
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Untitled
Abstract: No abstract text available
Text: FDW256P 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
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FDW256P
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AO4415
Abstract: No abstract text available
Text: AO4415 30V P-Channel MOSFET General Description Product Summary The AO4415 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -30V
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AO4415
AO4415
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Untitled
Abstract: No abstract text available
Text: AO4415 30V P-Channel MOSFET General Description Product Summary The AO4415 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = -30V
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AO4415
AO4415
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复合
Abstract: ELM35604KA P2103ND5G
Text: 复合沟道 MOSFET ELM35604KA-S •概要 ■特点 ELM35604KA-S 是低输入电容低工 N 沟道 作电压、低导通电阻的大电流 MOSFET。 •Vds=30V P 沟道 ·Vds=-30V 同时内藏有 N 沟道和 P 沟道的复合产品。 ·Id=8.5A ·Id=-7A
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ELM35604KA-S
O-252-5
Mar-01-2005
P2103ND5G
复合
ELM35604KA
P2103ND5G
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Untitled
Abstract: No abstract text available
Text: AON2409 30V P-Channel MOSFET General Description Product Summary The AON2409 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AON2409
AON2409
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Untitled
Abstract: No abstract text available
Text: AON2409 30V P-Channel MOSFET General Description Product Summary The AON2409 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AON2409
AON2409
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Untitled
Abstract: No abstract text available
Text: AON2409 30V P-Channel MOSFET General Description Product Summary The AON2409 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.
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AON2409
AON2409
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TSM4835
Abstract: TSM4835CS
Text: TSM4835 30V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS = - 30V RDS on , Vgs @ - 10V, Ids @ - 9.5A =18mΩ RDS (on), Vgs @ - 4.5V, Ids @ - 7.5A =30mΩ Features Block Diagram
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TSM4835
TSM4835CS
TSM4835
TSM4835CS
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Untitled
Abstract: No abstract text available
Text: intervil HUF76121SK8 Data S h e e t A p r il 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive Formerly developmental type TA76121. PACKAGE MS-012AA • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER
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HUF76121SK8
100ms.
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