DS20A
Abstract: APM4354 APM4354KP f 0452 N-Channel MOSFET STD-020C ds20a6
Text: APM4354KP N-Channel Enhancement Mode MOSFET Pin Description Features D • D 30V/70A, D D RDS ON =4.5mΩ (typ.) @ VGS = 10V S S RDS(ON) =6mΩ (typ.) @ VGS = 4.5V • • • • S G Super High Dense Cell Design Avalanche Rated Top View of KPAK Reliable and Rugged
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APM4354KP
0V/70A,
APM4354
APM4354
DS20A
APM4354KP
f 0452 N-Channel MOSFET
STD-020C
ds20a6
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A102
Abstract: APM4358KP STD-020C APM43 APM4358
Text: APM4358KP N-Channel Enhancement Mode MOSFET Pin Description Features D • D 30V/80A, D D RDS ON = 2.3mΩ (typ.) @ VGS = 10V S S RDS(ON) = 4.3mΩ (typ.) @ VGS = 4.5V • • • • S G Super High Dense Cell Design Avalanche Rated Top View of KPAK Reliable and Rugged
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APM4358KP
0V/80A,
APM4358
APM4358
A102
APM4358KP
STD-020C
APM43
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APM4354
Abstract: APM4354KP marking code KP A102
Text: APM4354KP N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/70A, D RDS ON =4.5mΩ (typ.) @ VGS = 10V D D D G RDS(ON) =6mΩ (typ.) @ VGS = 4.5V • • • • S S Super High Dense Cell Design S Avalanche Rated Top View of KPAK Reliable and Rugged
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APM4354KP
0V/70A,
APM4354
APM4354
APM4354KP
marking code KP
A102
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mosfet marking code N9
Abstract: mosfet marking code KP FDP8896
Text: FDP8896 N-Channel PowerTrench MOSFET 30V, 92A, 5.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low
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FDP8896
O-220AB
FDP8896
O-220-3
mosfet marking code N9
mosfet marking code KP
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24GHz
BF517
BF770A
BF771
BF775
BF799
BF799W
BFP181
BFP181R
BFP182
XM0830SJ
smd code marking 162 sot23-5
MARKING V14 SOT23-5
RF Transistor Selection
smd code marking rf ft sot23
smd code marking NEC rf transistor
sot-363 inf
smd marking D3 SOT363
XM0860SH
MGA51563
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p421f
Abstract: TLP350 equivalent NEC 10F triac A 3150 igbt driver TLP759 "cross reference" P181 Photocoupler pc817 equivalent TLP250 MOSFET DRIVER application note p421 Photocoupler TLP582 COMPATIBLE
Text: 2009-3 PRODUCT GUIDE Photocouplers and Photorelays SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Product Index Part Number CNY17-2 CNY17-3 CNY17-4 TLP105 TLP108 TLP109 TLP112 TLP112A TLP113 TLP114A TLP114A IGM TLP115 TLP115A TLP116 TLP116A TLP117
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CNY17-2
CNY17-3
CNY17-4
TLP105
TLP108
TLP109
TLP112
TLP112A
TLP113
TLP114A
p421f
TLP350 equivalent
NEC 10F triac
A 3150 igbt driver
TLP759 "cross reference"
P181 Photocoupler
pc817 equivalent
TLP250 MOSFET DRIVER application note
p421 Photocoupler
TLP582 COMPATIBLE
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Untitled
Abstract: No abstract text available
Text: ZXMP3F30FH P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TA = +25°C • Low On-Resistance • Fast Switching Speed 80mΩ@ VGS = -10V -4.0A • 4.5V Gate Drive Capability 140mΩ@ VGS =-4.5V ⎯ • Thermally Enhanced SOT23 package •
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ZXMP3F30FH
AEC-Q101
DS33579
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APM4356KP
Abstract: APM4356 STD-020C APM43 H PAO 40A
Text: APM4356KP N-Channel Enhancement Mode MOSFET Pin Description Features D • D 30V/80A, D D RDS ON = 3.3mΩ (typ.) @ VGS = 10V S S RDS(ON) = 4.5mΩ (typ.) @ VGS = 4.5V • • • • S G Super High Dense Cell Design Avalanche Rated Top View of KPAK Reliable and Rugged
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APM4356KP
0V/80A,
APM4356
APM4356
MIL-STD-883D-2003
MIL-STD-883D-1005
JESD-22-B
MIL-STD-883D-1011
MIL-STD-883D-3015
100mA
APM4356KP
STD-020C
APM43
H PAO 40A
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P521 OPTO
Abstract: p181 opto P521 opto coupler Opto Coupler p181 opto P181 p421 opto opto coupler P521 opto coupler P421 opto p521 cosmo 2010 4N35
Text: 2010-3 PRODUCT GUIDE Photocouplers and Photorelays h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g Preface As a type of isolator favored by manufacturers, photocouplers now serve as noise protectors in many electronic devices. Toshiba’s photocouplers consist of either a GaAs or
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TLP521-1
BCE0034E
P521 OPTO
p181 opto
P521 opto coupler
Opto Coupler p181
opto P181
p421 opto
opto coupler P521
opto coupler P421
opto p521
cosmo 2010 4N35
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DMP21D5UFD
Abstract: No abstract text available
Text: DMP21D5UFD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features RDS(ON) max -20V 1.0Ω @ VGS = -4.5V -600mA 1.5Ω @ VGS = -2.5V -500mA 2.0Ω @ VGS = -1.8V • • • • • • • • ID TA = +25°C Package X1-DFN1212-3
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DMP21D5UFD
-600mA
X1-DFN1212-3
-500mA
-400mA
-250mA
AEC-Q101
DS35931
DMP21D5UFD
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smd code va25
Abstract: MARKING CODE VA25
Text: KP1510 Series 8PIN IGBT GATE DRIVE PHOTOCOUPLER cosmo Description Schematic The KP1510 series consists of GaAlAs Light 1 8 2 7 3 6 4 5 emitter diode and an integrated. This unit is 8-lead DIP package. KP1510 series is suitable for gate driving circuit of IGBT or power
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KP1510
500ns
100ns
69P51006
smd code va25
MARKING CODE VA25
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12N60ES
Abstract: 12N60E 12n60 on semiconductor marking code dpack 264MH Sj 07 DIODE SMD dpack marking code 23
Text: Device Name DATE DRAWN Sep.-29-'08 CHECKED Sep.-29-'08 CHECKED Sep.-29-'08 NAME APPROVED : DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMI12N60ES
FMC12N60ES
FMB12N60ES
MS5F7204
H04-004-03
12N60ES
12N60E
12n60
on semiconductor marking code dpack
264MH
Sj 07 DIODE SMD
dpack marking code 23
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06N60E
Abstract: 06N60ES on semiconductor marking code dpack DIODE marking code SJ mosfet smd code tc fmc06n60es 15N 50 mosfet 06N6
Text: Device Name DATE DRAWN Sep.-30-'08 CHECKED Sep.-30-'08 CHECKED Sep.-30-'08 NAME APPROVED : DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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FMI06N60ES
FMC06N60ES
FMB06N60ES
MS5F7220
H04-004-03
06N60E
06N60ES
on semiconductor marking code dpack
DIODE marking code SJ
mosfet smd code tc
fmc06n60es
15N 50 mosfet
06N6
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NEC 10F triac
Abstract: TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin
Text: 2008-3 PRODUCT GUIDE Photocouplers and Photorelays s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Product Index Part Number Package Output Page TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP114A IGM TLP115 TLP115A TLP116 TLP117
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TLP102
TLP106
TLP112
TLP112A
TLP113
TLP114A
TLP115
TLP115A
TLP116
NEC 10F triac
TLP250 MOSFET DRIVER
p421f
p421 coupler
P181 Photocoupler
tlp3065
TLP3083
TLP520
TLP250 MOSFET DRIVER application note
5252 F 4-pin
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59n25
Abstract: No abstract text available
Text: DATE DRAWN Jul.-29-'05 CHECKED Jul.-29-'05 CHECKED Jul.-29-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used
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FMW59N25G
MS5F6281
H04-004-05
H04-004-03
59n25
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Untitled
Abstract: No abstract text available
Text: DATE DRAWN Jul.-29-'05 CHECKED Jul.-29-'05 CHECKED Jul.-29-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used
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FMW53N30G
MS5F6283
H04-004-05
H04-004-03
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Untitled
Abstract: No abstract text available
Text: DATE DRAWN Jul.-29-'05 CHECKED Jul.-29-'05 CHECKED Jul.-29-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used
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FMW56N28G
MS5F6282
H04-004-05
H04-004-03
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Untitled
Abstract: No abstract text available
Text: TS19704 Single-Stage Primary-Side Control with High PFC LED Driver SOP-8 Pin Definition: 1. RT 8. VINT 2. DMG 7. COMP 3. VCC 6. GND 4. OUT 5. CS Description The TS19704 is a Primary-Side Control IC, high efficiency and simpler design with active power factor correction
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TS19704
TS19704
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FMW73N20G
Abstract: No abstract text available
Text: DATE DRAWN Jul.-29-'05 CHECKED Jul.-29-'05 CHECKED Jul.-29-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used
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FMW73N20G
MS5F6280
H04-004-05
H04-004-03
FMW73N20G
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P620 PHOTOCOUPLER
Abstract: p181 opto TLP185 TLP785 Opto Coupler p181 toshiba smd marking code transistor opto P181 opto coupler TLP250 opto coupler P421 P181 Photocoupler
Text: 2011-3 PRODUCT GUIDE Photocouplers and Photorelays SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Preface Extensive Line of Products As a type of isolator favored by manufacturers, photocouplers now serve as noise protectors in many electronic devices.
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BCE0034F
P620 PHOTOCOUPLER
p181 opto
TLP185
TLP785
Opto Coupler p181
toshiba smd marking code transistor
opto P181
opto coupler TLP250
opto coupler P421
P181 Photocoupler
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Untitled
Abstract: No abstract text available
Text: TS19704 Single-Stage Primary-Side Control with High PFC LED Driver SOP-8 Pin Definition: 1. RT 8. VINT 2. DMG 7. COMP 3. VCC 6. GND 4. OUT 5. CS Description The TS19704 is a Primary-Side Control IC, high efficiency and simpler design with active power factor correction
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TS19704
TS19704
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halogen bulb circuit diagram
Abstract: mosfet marking code KP TS19704 TS197 sot8 LED driver circuit
Text: TS19704 Single-Stage Primary-Side Control with High PFC LED Driver SOP-8 Pin Definition: 1. RT 8. VINT 2. DMG 7. COMP 3. VCC 6. GND 4. OUT 5. CS Description The TS19704 is a Primary-Side Control IC, high efficiency and simpler design with active power factor correction
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TS19704
TS19704
halogen bulb circuit diagram
mosfet marking code KP
TS197
sot8
LED driver circuit
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symbol 16n50e
Abstract: 16N50E circuit 16n50e ms5f6867 smd code Hall MOSFET SMD MARKING CODE 618 FMC16N50E FMB16N50E Diode type SMD marking SJ N channel mosfet TO220
Text: Device Name DATE DRAWN July.-19-'07 CHECKED July.-19-'07 CHECKED July.-19-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
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FMI16N50E
FMC16N50E
FMB16N50E
MS5F6867
H04-004-03
symbol 16n50e
16N50E
circuit 16n50e
ms5f6867
smd code Hall
MOSFET SMD MARKING CODE 618
FMC16N50E
FMB16N50E
Diode type SMD marking SJ
N channel mosfet TO220
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Untitled
Abstract: No abstract text available
Text: PD 9.1663 International IOR Rectifier IR F R /U 9310 PRELIMINARY HEXFET Power MOSFET • • • • • • P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated Voss = -400V R D S (on) = 7 .0 Q
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OCR Scan
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IRFR9310)
IRFU9310)
-400V
O-251AA
0D26B20
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