MOSFET IRF7425 Search Results

MOSFET IRF7425 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET IRF7425 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRF7425 Abstract: MS-012AA Text: PD- 94022 IRF7425 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing	Original	PDF	IRF7425 IRF7425 MS-012AA
Untitled Abstract: No abstract text available Text: PD- 94022A IRF7425 HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description A D 1 8 2 7 D S 3 6 D G 4 5 D S These P-Channel HEXFET® Power MOSFETs from	Original	PDF	4022A IRF7425 EIA-481 EIA-541.
MOSFET IRF7425 Abstract: IRF7425 MS-012AA Text: PD- 94022A IRF7425 HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description A D 1 8 2 7 D S 3 6 D G 4 5 D S These P-Channel HEXFET® Power MOSFETs from	Original	PDF	4022A IRF7425 EIA-481 EIA-541. MOSFET IRF7425 IRF7425 MS-012AA
Untitled Abstract: No abstract text available Text: PD- 96062 IRF7425PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description A D 1 8 2 7 D S 3 6 D G 4 5 D S These P-Channel HEXFET® Power MOSFETs from	Original	PDF	IRF7425PbF EIA-481 EIA-541.
Untitled Abstract: No abstract text available Text: PD- 96062 IRF7425PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS ID 8.2@VGS = -4.5V 13@VGS = -2.5V -15A -13A 20V Description A D 1 8 2 7 D S 3 6 D G 4 5 D S These P-Channel HEXFET® Power MOSFETs from	Original	PDF	IRF7425PbF EIA-481 EIA-541.
Untitled Abstract: No abstract text available Text: IRF7425PbF VDS -20 RDS on max HEXFET Power MOSFET V (@VGS = -4.5V) 1 8 S 2 7 D S 3 6 D G 4 5 D mΩ RDS(on) max 13 (@VGS = -2.5V) Qg (typical) ID (@TA = 25°C) 87 nC -15 A Package Type IRF7425PbF SO-8 SO-8 Top View Features Industry-standard pinout SO-8 Package	Original	PDF	IRF7425PbF D-020D
Untitled Abstract: No abstract text available Text: IRF7425PbF-1 HEXFET Power MOSFET VDS -20 RDS on max V 1 8 S 2 7 D S 3 6 D G 4 5 D 8.2 (@VGS = -4.5V) mΩ RDS(on) max 13 (@VGS = -2.5V) Qg (typical) ID (@TA = 25°C) 87 nC -15 A Package Type IRF7425PbF-1 SO-8 SO-8 Top View Features Industry-standard pinout SO-8 Package	Original	PDF	IRF7425PbF-1 IRF7425Pefer D-020D
pn junction diode Abstract: p-n junction diode EIA-541 IRF7425 Text: IRF7425 Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance	Original	PDF	IRF7425 10sec. EIA-481 EIA-541. pn junction diode p-n junction diode EIA-541 IRF7425
IRU1239SC Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK	Original	PDF	100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	PDF	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l