MOSFET IRF635 Search Results

MOSFET IRF635 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET IRF635 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Q2N4401 Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog	Original	RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751	PDF
IL311ANM Abstract: tda8362b ILa1519B1Q iff4n60 IN1307N tda8890 IL311AN IL91214AN MC74HC123AN IL258D Text: SEMICONDUCTOR PRODUCTS SHORT FORM CATALOG INTEGRAL 2010-2011 INTEGRAL JSC reserves the right to make changes in device design, specifications and other information identified in this publication without notice and assumes no responsibility for the use of any device described herein.	Original		PDF
IRFB36 Abstract: 1RF634 Text: _ • 4305271 DDSMDea b 47 ■ HAS lì H A R R IS IRF634, IRF635 IRF636, IRF637 N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Package Features T 0 -2 2 0 A B • 8.1A and 6.5A, 250V - 275V TOP VIEW • i'DS(°n = 0 .4 5 0 and 0 .6 8 fi DRAIN	OCR Scan	IRF634, IRF635 IRF636, IRF637 275/250V IRF635, IRFB36 1RF634	PDF
IRF635 Abstract: IRF637 IRF636 IRF634 F634 fs34 diode IFIF634 IFIF636 IFIF637 irf634 mosfet Text: _ Rugged Power MOSFETs F ile N u m b e r IRF634, IRF635, IRF636, IRF637 2168 Avalanche Energy Rated N-Channel Power MOSFETs N -C HANNEL EN HANCEM ENT MODE 8.1 A, and 6.5A, 275, 250V Tds on = 0.45Q, 0.68Q Features: • Single pulse avalanche energy rated	OCR Scan	IRF634, IRF635, IRF636, IRF637 IRF637 IRF635 IRF636 IRF634 F634 fs34 diode IFIF634 IFIF636 IFIF637 irf634 mosfet	PDF
diode c248 Abstract: irf6348 DIODE C249 IRF635 jh32 C248 diode irf634 9476A MOSFET IRF635 Text: h e D I • 4flss4sa oGoaina ? I ■ Data Sheet No. PD-9.476A INTERNATIONAL R E C T I F I E R T-39-11 INTERNATIONAL RECTIFIER IX R HEXFET TRANSISTORS IRF634 IRF635 N -C H A N N E L Features 250 Volt, 0.45 Ohm HEXFET TO-220AB Plastic Package The HEXFET technology is the key to International	OCR Scan	T-39-11 O-220AB C-252 diode c248 irf6348 DIODE C249 IRF635 jh32 C248 diode irf634 9476A MOSFET IRF635	PDF
4311 mosfet transistor Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760	OCR Scan	2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRO NICS IN C b?E D • 7 S b m i42 G0 1 7 2 Ô3 I b b ■ N-CHANNEL POWER MOSFETS IRF634/635 FEATURES • • • • • • • Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance	OCR Scan	IRF634/635 IRF634 IRF635 DC172Ã	PDF