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    MOSFET 913 Search Results

    MOSFET 913 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 913 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    international rectifier

    Abstract: IRFM260 4.5v to 100v input regulator
    Text: PD - 91388C POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


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    91388C O-254AA) IRFM260 O-254AA. MIL-PRF-19500 international rectifier IRFM260 4.5v to 100v input regulator PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91388C POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.


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    91388C O-254AA) IRFM260 O-254AA. MIL-PRF-19500 PDF

    IRF*260

    Abstract: IRFM260 4.5V TO 100V INPUT REGULATOR
    Text: PD - 91388B POWER MOSFET THRU-HOLE TO-254AA IRFM260 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 Ω 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The


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    91388B O-254AA) IRFM260 O-254AA. MIL-PRF-19500 IRF*260 IRFM260 4.5V TO 100V INPUT REGULATOR PDF

    irf 44 n

    Abstract: IRF7413
    Text: PD - 91330D IRF7413 PROVISIONAL HEXFET Power MOSFET Advanced Power MOSFET Technology Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l A A D 1 8 S 2 7 D S 3 6 D G


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    91330D IRF7413 characteristi310) irf 44 n IRF7413 PDF

    IRf 48 MOSFET

    Abstract: N CHANNEL 250A SINGLE PHASE POWER MOSFET 9936 mosfet P 838 X MOSFET DATA SHEET MOSFET SO-8 IRF7413 power mosfet so8 FL 91330
    Text: PD - 91330E IRF7413 HEXFET Power MOSFET Advanced Power MOSFET Technology Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V


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    91330E IRF7413 multiple-310) IRf 48 MOSFET N CHANNEL 250A SINGLE PHASE POWER MOSFET 9936 mosfet P 838 X MOSFET DATA SHEET MOSFET SO-8 IRF7413 power mosfet so8 FL 91330 PDF

    AN799 Matching MOSFET Drivers to MOSFETs

    Abstract: an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424
    Text: AN799 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. TC4424 MOSFET DIE SIZES Unlike bipolar transistors in which die size is primarily a function of


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    AN799 TC4424 D-81739 DS00799A* DS00799A-page AN799 Matching MOSFET Drivers to MOSFETs an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application TC4420 die MOSFET TEST SIMPLE Procedures TC4424 PDF

    24V 10A SMPS

    Abstract: AN1001 EIA-541 F7101 IRF7101 IRF7413 SMPS 24V
    Text: PD- 91330F IRF7413 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


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    91330F IRF7413 AN1001) 24V 10A SMPS AN1001 EIA-541 F7101 IRF7101 IRF7413 SMPS 24V PDF

    IXDD 614

    Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
    Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers


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    AN0002 RH159NB D-68623; IXDD 614 BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS PDF

    AN1001

    Abstract: EIA-541 F7101 IRF7101 IRF7413
    Text: PD- 91330G IRF7413 SMPS MOSFET HEXFET Power MOSFET Applications l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


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    91330G IRF7413 AN1001) AN1001 EIA-541 F7101 IRF7101 IRF7413 PDF

    SMD 51A

    Abstract: IRHNA3160 IRHNA4160 IRHNA7160 IRHNA8160 JANSR2N7432U
    Text: PD - 91396C IRHNA7160 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/664 RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA7160 100K Rads (Si) IRHNA3160 300K Rads (Si) RDS(on)


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    91396C IRHNA7160 MIL-PRF-19500/664 IRHNA7160 IRHNA3160 JANSR2N7432U JANSF2N7432U IRHNA4160 JANSG2N7432U JANSH2N7432U SMD 51A IRHNA4160 IRHNA8160 JANSR2N7432U PDF

    Matching MOSFET Drivers to MOSFETs

    Abstract: POWER MOSFET 4600 TC4422 AN799 Matching MOSFET Drivers to MOSFETs fet 4816 multiple mosfet gate driver Dual Gate MOSFET graphs an799 mosfet cross reference MOSFET A3
    Text: AN799 Matching MOSFET Drivers to MOSFETs Author: Jamie Dunn Microchip Technology Inc. 2. Power dissipation due to quiescent current draw of the MOSFET driver. EQUATION 2: INTRODUCTION There are many MOSFET technologies and silicon processes in existence today, with new advances being


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    AN799 r4-7200 D-85737 NL-5152 DS00799B-page Matching MOSFET Drivers to MOSFETs POWER MOSFET 4600 TC4422 AN799 Matching MOSFET Drivers to MOSFETs fet 4816 multiple mosfet gate driver Dual Gate MOSFET graphs an799 mosfet cross reference MOSFET A3 PDF

    smd 43a

    Abstract: IRHNA3260 IRHNA4260 IRHNA7260 IRHNA8260 JANSR2N7433U
    Text: PD - 91397B IRHNA7260 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 REF: MIL-PRF-19500/664 RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA7260 100K Rads (Si) IRHNA3260 300K Rads (Si) RDS(on)


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    91397B IRHNA7260 MIL-PRF-19500/664 IRHNA7260 IRHNA3260 JANSR2N7433U JANSF2N7433U IRHNA4260 JANSG2N7433U JANSH2N7433U smd 43a IRHNA4260 IRHNA8260 JANSR2N7433U PDF

    SCH2815

    Abstract: 9130
    Text: SCH2815 Ordering number : ENA0369 SANYO Semiconductors DATA SHEET SCH2815 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a Schottky barrier diode contained in one package


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    SCH2815 ENA0369 A0369-6/6 SCH2815 9130 PDF

    IRHN7450SE

    Abstract: No abstract text available
    Text: PD - 91313C IRHN7450SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7450SE Radiation Level RDS(on) 100K Rads (Si) 0.51Ω ID 12A SMD-1 International Rectifier’s RADHardTM HEXFET® MOSFET


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    91313C IRHN7450SE MIL-STD-750, MlL-STD-750, IRHN7450SE PDF

    IRH7450SE

    Abstract: No abstract text available
    Text: PD - 91390B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-204AA/AE IRH7450SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7450SE Radiation Level 100K Rads (Si) RDS(on) 0.51Ω ID 12A International Rectifier’s RADHardTM HEXFET® MOSFET


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    91390B O-204AA/AE) IRH7450SE MIL-STD-750, MlL-STD-750, --TO-204AE IRH7450SE PDF

    IRHNA7460SE

    Abstract: HEXFET Power MOSFET SMD2
    Text: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET


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    91399B IRHNA7460SE MIL-STD-750, MlL-STD-750, IRHNA7460SE HEXFET Power MOSFET SMD2 PDF

    IRHNA7360SE

    Abstract: No abstract text available
    Text: PD-91398B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET


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    PD-91398B IRHNA7360SE 12volt MIL-STD-750, 320volt MlL-STD-750, IRHNA7360SE PDF

    IRHNA7460SE

    Abstract: No abstract text available
    Text: PD - 91399A IRHNA7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET


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    1399A IRHNA7460SE MIL-STD-750, MlL-STD-750, IRHNA7460SE PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91390B RADIATION HARDENED POWER MOSFET THRU-HOLE TO-204AA/AE IRH7450SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7450SE Radiation Level 100K Rads (Si) RDS(on) 0.51Ω ID 12A International Rectifier’s RADHardTM HEXFET® MOSFET


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    91390B O-204AA/AE) IRH7450SE MIL-STD-750, MlL-STD-750, O-204AE PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET


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    91399B IRHNA7460SE MIL-STD-750, MlL-STD-750, PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91313C IRHN7450SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHN7450SE Radiation Level RDS(on) 100K Rads (Si) 0.51Ω ID 12A SMD-1 International Rectifier’s RADHardTM HEXFET® MOSFET


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    91313C IRHN7450SE MIL-STD-750, MlL-STD-750, PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-91398B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET


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    PD-91398B IRHNA7360SE 12volt MIL-STD-750, 320volt MlL-STD-750, PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96107A IRF7314QPbF HEXFET Power MOSFET Benefits • Advanced Process Technology • ÿDual P-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿRepetitive Avalanche Allowed up to Tjmax • ÿLead-Free Description These HEXFET ® Power MOSFET’s in a Dual SO-8


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    6107A IRF7314QPbF reliable461 EIA-481 EIA-541. PDF

    sc1142

    Abstract: sanyo a75 amplifier IR7811 a106 diode SC1142CSW surface mount A106 diode B85 diode A107 capacitor B91 02 diode A116 diode
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER December 16, 1999 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving


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    SC1405B SC1405B 3000pF IR7811 FDB7030 TSSOP-14 ECN99-773 sc1142 sanyo a75 amplifier a106 diode SC1142CSW surface mount A106 diode B85 diode A107 capacitor B91 02 diode A116 diode PDF