Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 6R099 Search Results

    MOSFET 6R099 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 6R099 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    6R099C6

    Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6


    Original     		IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 6R099C6 MOSFET TRANSISTOR SMD MARKING CODE A1 IPx60R099C6 IPW60R099C6 TRANSISTOR SMD MARKING CODE 604 IPB60R099C6 to247 pcb footprint 6R099 TRANSISTOR SMD MARKING CODE IPA60R099C6 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R099P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 1Description


    Original     		IPx60R099P6 IPW60R099P6, IPP60R099P6, IPA60R099P6 O-247 O-220 PDF

    6R099C6

    Abstract: CoolMOS TC 6R099C6 6R099 6r099c6 mosfet Diode SMD SJ 36 IPB60R099C6 transistor 6R099C6 IPP60R099C6 IPW60R099C6 6R099* TO220
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6


    Original     		IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 6R099C6 CoolMOS TC 6R099C6 6R099 6r099c6 mosfet Diode SMD SJ 36 IPB60R099C6 transistor 6R099C6 IPW60R099C6 6R099* TO220 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 0.9, 2009-09-07 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6


    Original     		IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 PDF

    6R099C6

    Abstract: 6R099 6r099c6 mosfet IPW60R099C6 IPx60R099C6 IPP60R099C6 CoolMOS TC 6R099C6 IPA60R099C6 TO-247 FULLPAK Package TRANSISTOR SMD MARKING CODE
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.0, 2009-09-25 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R099C6, IPB60R099C6


    Original     		IPx60R099C6 IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 6R099C6 6R099 6r099c6 mosfet IPW60R099C6 IPx60R099C6 CoolMOS TC 6R099C6 IPA60R099C6 TO-247 FULLPAK Package TRANSISTOR SMD MARKING CODE PDF

    ipb60r099cpa

    Abstract: IPI60R099CPA 6R099 TO262-3-1 IPB60R199CPA IPW60R045CP PG-TO262-3-1
    Text: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPI60R099CPA PG-TO262-3-1 6R099A PG-TO220-3-1 PG-TO247-3-41 ipb60r099cpa IPI60R099CPA 6R099 TO262-3-1 IPB60R199CPA IPW60R045CP PG-TO262-3-1 PDF

    PG-TO263-3-2

    Abstract: PG-TO-263-3-2 IPB60R099CPA 6R099 6R099A IPB60R199CPA IPI60R099CPA IPB60R199
    Text: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPB60R099CPA PG-TO263-3-2 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO263-3-2 PG-TO-263-3-2 IPB60R099CPA 6R099 6R099A IPB60R199CPA IPI60R099CPA IPB60R199 PDF

    IPW60R099CPA

    Abstract: PG-TO247 6R099A IPI60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3
    Text: IPW60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPW60R099CPA PG-TO247-3 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 IPW60R099CPA PG-TO247 6R099A IPI60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3 PDF

    IPP60R099CPA

    Abstract: IPB60R099CPA IPB60R199CPA PG-TO220-3 IPW60R045CPA 6R099A IPC60R075CPA
    Text: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPP60R099CPA PG-TO220-3-1 6R099A PG-TO262-3-1 PG-TO247-3-41 IPP60R099CPA IPB60R099CPA IPB60R199CPA PG-TO220-3 IPW60R045CPA 6R099A IPC60R075CPA PDF

    Diode SMD ED 98

    Abstract: SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME diode smd ed 18 diode smd ed 02 Energy Me
    Text: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability


    Original     		IPB60R099CPA PG-TO263-3-2 6R099A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 Diode SMD ED 98 SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME diode smd ed 18 diode smd ed 02 Energy Me PDF

    6r099a

    Abstract: 6r099 DIODE ED 11
    Text: IPW60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO247-3 • High peak current capability


    Original     		IPW60R099CPA 6R099A PG-TO247-3 PG-TO247-3 IPW60PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 6r099 DIODE ED 11 PDF

    6r099

    Abstract: df RN transistor
    Text: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Features ed nd me ns om sig ec de tr w e no rn fo Q g,typ 600 V 0.105 Ω 60 nC • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability


    Original     		IPP60R099CPA 6R099A PG-TO220-3-1 PG-TO220-3-1 APG-TO263-3-2 PG-TO262-3-1 PG-TO247-3-41 PG-TO247-3-41 6r099 df RN transistor PDF

    PG-TO262-3-1

    Abstract: 6R099 df RN transistor A93V IPB60R099CPA IPB60R199CPA IPI60R099CPA IPW60R099CPA PG-TO247-3-41 6R099A
    Text: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability


    Original     		IPI60R099CPA PG-TO262-3-1 6R099A PG-TO263-3-2 PG-TO220-3-1 PG-TO247-3-41 PG-TO262-3-1 6R099 df RN transistor A93V IPB60R099CPA IPB60R199CPA IPI60R099CPA IPW60R099CPA PG-TO247-3-41 6R099A PDF

    6R099

    Abstract: IPW60R099CS 6r099 mosfet PG-TO-247-3 JESD22 transistor j25
    Text: IPW60R099CS CoolMOS TM Power Transistor Product Summary Features V DS • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 600 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R099CS PG-TO247-3 Q67045A5060 6R099 6R099 IPW60R099CS 6r099 mosfet PG-TO-247-3 JESD22 transistor j25 PDF

    6R099

    Abstract: IPP60R099CP 6r099 mosfet 6R099* TO220
    Text: IPP60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R099CP PG-TO220 SP000057021 6R099 6R099 IPP60R099CP 6r099 mosfet 6R099* TO220 PDF

    6R099

    Abstract: IPW60R099CP 6R099 IPW60R099CP JESD22 SP000067147 6r099 mosfet Transistor 6r099
    Text: IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 650 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R099CP PG-TO247-3-1 SP000067147 6R099 10gerous 6R099 IPW60R099CP 6R099 IPW60R099CP JESD22 SP000067147 6r099 mosfet Transistor 6r099 PDF

    6R099

    Abstract: IPW60R099CP 6R099 6r099 Transistor IPW60R099CP 6r099 mosfet PG-TO247 6R099 free download smps 450 W SP000067147 JESD22
    Text: IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 650 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPW60R099CP PG-TO247-3-1 SP000067147 6R099 10erous 6R099 IPW60R099CP 6R099 6r099 Transistor IPW60R099CP 6r099 mosfet PG-TO247 6R099 free download smps 450 W SP000067147 JESD22 PDF

    6R099

    Abstract: CoolMOS Power Transistor IPP60R099CP IPP60R099 JESD22 SP000057021 6R099* TO220
    Text: IPP60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 650 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R099CP PG-TO220 SP000057021 6R099 6R099 CoolMOS Power Transistor IPP60R099CP IPP60R099 JESD22 SP000057021 6R099* TO220 PDF

    6r099a

    Abstract: 6R099 IPI60R099CPA
    Text: IPI60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO262 • Ultra low gate charge PG-TO262-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPI60R099CPA IPI60R099CPA PG-TO262-3-1 6R099A PG-TO262-3-1 6R099 PDF

    Untitled

    Abstract: No abstract text available
    Text: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPP60R099CPA PG-TO220-3-1 6R099A PDF

    6R099

    Abstract: 6R099A IPP60R099CPA IPP60R099 IPP60R099CP PG-TO220-3
    Text: IPP60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best R ds,on in TO220 • Ultra low gate charge PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPP60R099CPA PG-TO220-3-1 6R099A 6R099 6R099A IPP60R099CPA IPP60R099 IPP60R099CP PG-TO220-3 PDF

    6r099 mosfet

    Abstract: 6R099 c25 diode to220 Transistor 6r099
    Text: IPP60R099CP CoolMOSTM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO220 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPP60R099CP PG-TO220 SP000057021 6R099 6r099 mosfet 6R099 c25 diode to220 Transistor 6r099 PDF

    6R099

    Abstract: 6r099 mosfet infineon 6r099 mosfet 6r099 6r099 Transistor
    Text: IPB60R099CP CoolMOSTM Power Transistor Product Summary Features V DS • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge Q g,typ 600 V 0.099 Ω 60 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		IPB60R099CP PG-TO263-3-2 SP000088490 6R099 6R099 6r099 mosfet infineon 6r099 mosfet 6r099 6r099 Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPB60R099CPA PG-TO263-3-2 6R099A PDF