IPP50R280Ce
Abstract: IPD50R1K4CE IPD50R380CE IPD50R800CE
Text: Product Brief Features 500V CoolMOS CE Power MOSFET The CoolMOS™ CE is a new technology platform of Infineon’s market leading high voltage power MOSFETs designed according to the revolutionary superjunction SJ principle. 500V CE portfolio provides all benefits of a fast switching SJ MOSFET while not
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STB4NC50
Abstract: No abstract text available
Text: STB4NC50 N-CHANNEL 500V - 2.2Ω - 4A D2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB4NC50 500V < 2.7Ω 4A TYPICAL RDS(on) = 2.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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STB4NC50
STB4NC50
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STB4NC50
Abstract: No abstract text available
Text: STB4NC50 N-CHANNEL 500V - 2.2Ω - 4A D2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB4NC50 500V < 2.7Ω 4A TYPICAL RDS(on) = 2.2 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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STB4NC50
STB4NC50
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TA17415
Abstract: BUZ42 TB334 TO 220AB Mosfet
Text: BUZ42 Semiconductor Data Sheet 4A, 500V, 2.000 Ohm, N-Channel Power MOSFET October 1998 File Number 2417.1 Features • 4A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 2.000Ω (BUZ42 field effect transistor designed for applications such as
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BUZ42
BUZ42
TA17415.
TA17415
TB334
TO 220AB Mosfet
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IRF820
Abstract: No abstract text available
Text: IRF820 N-channel 500V - 2.5Ω - 4A TO-220 PowerMesh II MOSFET General features Type VDSS RDS on ID IRF820 500V <0.3Ω 4A • Extremely high dv/dt capability ■ 100% avalnche tested ■ New high voltage benchmark ■ Gate charge minimized 3 1 2 TO-220
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IRF820
O-220
O-220
IRF820
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IRF820
Abstract: JESD97 IRF8204
Text: IRF820 N-channel 500V - 2.5Ω - 4A TO-220 PowerMesh II MOSFET General features Type VDSS RDS on ID IRF820 500V <0.3Ω 4A • Extremely high dv/dt capability ■ 100% avalnche tested 3 ■ New high voltage benchmark ■ Gate charge minimized 1 TO-220 c
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IRF820
O-220
IRF820
JESD97
IRF8204
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DIODE P840
Abstract: F840
Text: PJP840 / PJF840 TO-220AB / ITO-220AB 500V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 500V, RDS ON =0.9Ω@VGS=10V, ID=4A • • • • • • TO-220AB ITO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP840
PJF840
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
DIODE P840
F840
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N50 Preliminary Power MOSFET 4A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 4N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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O-252
O-220
O-220F
QW-R502-525
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2E12
Abstract: 3E12 FRM440D FRM440H FRM440R
Text: FRM440D, FRM440R, FRM440H 6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 6A, 500V, RDS on = 1.40Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRM440D,
FRM440R,
FRM440H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
2E12
3E12
FRM440D
FRM440H
FRM440R
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6a 500v
Abstract: 2E12 3E12 FRM440D FRM440H FRM440R Rad Hard in Fairchild for MOSFET
Text: FRM440D, FRM440R, FRM440H 6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 6A, 500V, RDS on = 1.40Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRM440D,
FRM440R,
FRM440H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
6a 500v
2E12
3E12
FRM440D
FRM440H
FRM440R
Rad Hard in Fairchild for MOSFET
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N-Channel mosfet 400v
Abstract: No abstract text available
Text: FRM440D, FRM440R, FRM440H 6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 6A, 500V, RDS on = 1.40Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRM440D,
FRM440R,
FRM440H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
N-Channel mosfet 400v
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13N50
Abstract: utc13n50 13n50g 13N50 equivalent mosfet driver 400v halogen ballast 13N50G-TA3-T
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
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13N50
13N50
QW-R502-362
utc13n50
13n50g
13N50 equivalent
mosfet driver 400v
halogen ballast
13N50G-TA3-T
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STB8NC50
Abstract: No abstract text available
Text: STB8NC50 N-CHANNEL 500V - 0.7Ω - 8A D2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STB8NC50 500V < 0.85 Ω 8A TYPICAL RDS(on) = 0.7Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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STB8NC50
STB8NC50
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FTP08N50
Abstract: ftp08n FTA08N50 n-channel 250V 80a power mosfet ARK Microelectronics
Text: FTP08N50/FTA08N50 500V N-Channel MOSFET General Features ¾ ¾ ¾ ¾ ¾ Low ON Resistance Low Gate Charge typical 33nC Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free BVDSS RDS(ON) (Max.) ID 500V 0.9Ω 8.0A Applications ¾ ¾ ¾ ¾ High Efficiency SMPS
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FTP08N50/FTA08N50
FTP08N50
O-220
FTA08N50
O-220F
FTP08N50
ftp08n
FTA08N50
n-channel 250V 80a power mosfet
ARK Microelectronics
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Untitled
Abstract: No abstract text available
Text: ZDX080N50 Nch 500V 8A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.85W ID 8A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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ZDX080N50
O-220FM
ZDX080N50
R1120A
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Untitled
Abstract: No abstract text available
Text: ZDX080N50 Nch 500V 8A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.85W ID 8A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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ZDX080N50
O-220FM
R1120A
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Untitled
Abstract: No abstract text available
Text: ZDX080N50 Datasheet Nch 500V 8A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.85W ID 8A PD 40W TO-220FM (3) (2) (1) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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ZDX080N50
O-220FM
R1120A
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AOT8N50
Abstract: AOTF8N50
Text: AOT8N50/AOTF8N50 500V, 8A N-Channel MOSFET General Description Features The AOT8N50 & AOTF8N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT8N50/AOTF8N50
AOT8N50
AOTF8N50
O-220
O-220F
AOTF8N50
AOT8N50
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Untitled
Abstract: No abstract text available
Text: IRF820 N-channel 500V - 2.5Ω - 4A TO-220 PowerMesh II MOSFET General features Type VDSS RDS on ID IRF820 500V <0.3Ω 4A ) s ( t c u d o ) r s ( P t Description c e t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s t Applications b
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IRF820
O-220
IRF820
O-220
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13N50
Abstract: 13N50 equivalent 13n50g QW-R502-362 13N50G-TF1-T 362 MOSFET
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION 1 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can
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13N50
13N50
O-220
O-220F
QW-R502-362
13N50 equivalent
13n50g
13N50G-TF1-T
362 MOSFET
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mosfet 441
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK14UM-10 HIGH-SPEED SWITCHING USE FK14UM-10 • VDSS . 500V • rDS ON (MAX) .0.80Q •ID . 14A
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FK14UM-10
150ns
mosfet 441
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SGS-Thomson mosfet ipak
Abstract: No abstract text available
Text: r z r "*1M s g s - ih o m s o n MGISQiLiCTMBOei STD1NB50 N - CHANNEL 500V - 7.5Q - 1 ,4A - IPAK PowerMESH MOSFET TYPE Voss RDS on Id STD1NB50 500V < 9 Î2 1.4 A . TYPICAL RDS(on) =7.5 Q EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES
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STD1NB50
SGS-Thomson mosfet ipak
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STD1NB50 N - CHANNEL 500V - 7.5Î2 - 1 ,4A - IPAK PowerMESH MOSFET TYPE STD1N B50 V dss 500V Id R D S (o n ) < 9 Q. 1 .4 A . • TYPICAL RDS(on) = 7.5 EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED
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STD1NB50
O-251
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44i2
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET j FS3UM-10 j HIGH-SPEED SWITCHING USE I FS3UM-10 • VOSS . 500V • ros ON (MAX) . 4.4Í2
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FS3UM-10
FS3UM-10
5711K2
44i2
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