MOSFET 4927N Search Results

MOSFET 4927N Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

MOSFET 4927N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
4927N Abstract: mosfet 4927n NTMFS4927N NTMFS4927NT1G Text: NTMFS4927N Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives	Original	NTMFS4927N NTMFS4927N/D 4927N mosfet 4927n NTMFS4927N NTMFS4927NT1G	PDF
4927N Abstract: mosfet 4927n NTMFS4927N Text: NTMFS4927N Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives	Original	NTMFS4927N NTMFS4927N/D 4927N mosfet 4927n	PDF
4927n Abstract: mosfet 4927n Text: NTMFS4927N Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives	Original	NTMFS4927N NTMFS4927N/D 4927n mosfet 4927n	PDF
4927N Abstract: mosfet 4927n NTMFS4927NC ntmfs4927 NTMFS4927NT3G Text: NTMFS4927N, NTMFS4927NC Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives	Original	NTMFS4927N, NTMFS4927NC NTMFS4927N/D 4927N mosfet 4927n ntmfs4927 NTMFS4927NT3G	PDF
Untitled Abstract: No abstract text available Text: NTMFS4927N, NTMFS4927NC Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives	Original	NTMFS4927N, NTMFS4927NC NTMFS4927N/D	PDF
mosfet 4927n Abstract: 4927N NTMFS4927NT1G NTMFS4927N NTMFS4927NT3G DFN5 1.6 PACKAGE DIMENSIONS Text: NTMFS4927N Power MOSFET 30 V, 38 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS	Original	NTMFS4927N NTMFS4927N/D mosfet 4927n 4927N NTMFS4927NT1G NTMFS4927N NTMFS4927NT3G DFN5 1.6 PACKAGE DIMENSIONS	PDF