Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET 4502GM Search Results

    MOSFET 4502GM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 4502GM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mosfet 4502GM

    Abstract: 4502GM AP4502 AP4502GM
    Text: AP4502GM RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D2 D2 ▼ Low Gate Charge RDS ON D1 D1 ▼ Fast Switching Performance 20V 18mΩ ID SO-8 S1 S2 G1 G2 8.3A


    Original
    AP4502GM 4502GM mosfet 4502GM 4502GM AP4502 AP4502GM PDF

    mosfet 4502GM

    Abstract: 4502gm SSM4502GM
    Text: SSM4502GM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY N-CH BVDSS D2 D2 Simple Drive Requirement Low Gate Charge Fast Switching Performance 20V RDS ON D1 D1 18mΩ ID SO-8 S1 S2 G1 8.3A P-CH BVDSS G2 -20V RDS(ON) DESCRIPTION 45mΩ ID -5A The advanced power MOSFETs from Silicon Standard Corp.


    Original
    SSM4502GM mosfet 4502GM 4502gm SSM4502GM PDF