9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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CMLM0574
Abstract: PB CMLM0574 mosfet 4812 4812 mosfet CMLM0584 schottky diode
Text: Product Brief CMLM0574 Multi Discrete Module 30V, 450mA, N-Channel MOSFET and 40V, 500mA Schottky diode SOT-563 Typical Electrical Characteristic: Description: MOSFET: The CENTRAL SEMICONDUCTOR CMLM0574 is a Multi Discrete Module consisting of a single N-Channel Enhancement Mode MOSFET
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CMLM0574
450mA,
500mA
OT-563
CMLM0574
OT-563
450mA
500mA
200mA,
350mV
PB CMLM0574
mosfet 4812
4812 mosfet
CMLM0584
schottky diode
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Untitled
Abstract: No abstract text available
Text: FQP9N30 N-Channel QFET MOSFET 300 V, 9.0 A, 450 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQP9N30
FQP9N30
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Untitled
Abstract: No abstract text available
Text: FQD7P06 P-Channel QFET MOSFET - 60 V, - 5.4 A, 450 m Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQD7P06
FQD7P06
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Untitled
Abstract: No abstract text available
Text: FQP9N30 N-Channel QFET MOSFET 300 V, 9.0 A, 450 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQP9N30
O-220
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MOSFET P-channel SOT-23
Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
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2N7000
2N7002L
MOSFET60
OT-23
BS107,
BS107A
BS108
BS170
NUD3124
NUD3160
MOSFET P-channel SOT-23
NTD80N02
NTD18N06
NTMS3P03R2
MLD1N06CL
NTHD5904N
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Power MOSFET, toshiba
Abstract: 4502 mosfet 2sk3561 HIGH POWER MOSFET TOSHIBA 2SK3568 2sk3562 2SK2842 2SK3742 2SK3567 equivalent 2SK3567
Text: Power MOSFET Power MOSFETs - Middle & High Voltage Series VDSS≥100V - Aug. 2003 Toshiba Corporation Semiconductor Company DP0530019_01 Copyright 2003 Toshiba Corporation. All rights reserved. 1 Power MOSFET Middle & High Voltage Power MOSFET 1) π-MOS (Trench Gate Power MOSFET) series
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VDSS100V)
DP0530019
O-220SIS
Power MOSFET, toshiba
4502 mosfet
2sk3561
HIGH POWER MOSFET TOSHIBA
2SK3568
2sk3562
2SK2842
2SK3742
2SK3567 equivalent
2SK3567
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Dose
Abstract: No abstract text available
Text: PRELIMINARY MOSFET SE M SC ICO F9 A 550 Radiation Hardness Assurance 450 Volt 11 Amp 0.45Ω SCF 9550 N-Channel Power MOSFET DESCRIPTION Semicoa’s Radiation Hardened MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications.
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MIL-STD-750,
MIL-PRF-19500
Dose
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Untitled
Abstract: No abstract text available
Text: MOSFET 30A 450 500V 1 PD4M441L P2H4M441L PD4M440L
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PD4M441L
P2H4M441L
PD4M440L
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Untitled
Abstract: No abstract text available
Text: MOSFET 50A 450 500V 1 PD7M441H P2H7M441H PD7M440H
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PD7M441H
P2H7M441H
PD7M440H
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Untitled
Abstract: No abstract text available
Text: MOSFET 50A 450 500V 1 PD7M441L P2H7M441L PD7M440L
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PD7M441L
P2H7M441L
PD7M440L
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Untitled
Abstract: No abstract text available
Text: LM2724A LM2724A High Speed 3A Synchronous MOSFET Driver Literature Number: SNVS242A LM2724A High Speed 3A Synchronous MOSFET Driver chronization operation of the bottom MOSFET can be disabled by pulling the SYNC pin to ground. General Description The LM2724A is a dual N-channel MOSFET driver which can
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LM2724A
LM2724A
SNVS242A
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Untitled
Abstract: No abstract text available
Text: MOSFET 70A 450 500V 1 PD10M441L P2H10M441L PD10M440L
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PD10M441L
P2H10M441L
PD10M440L
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Untitled
Abstract: No abstract text available
Text: MOSFET 30A 450 500V 1 PD4M441H P2H4M441H PD4M440H
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PD4M441H
P2H4M441H
PD4M440H
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Untitled
Abstract: No abstract text available
Text: FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Ω Features Description • RDS on = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
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FDD5N60NZ
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Abstract: No abstract text available
Text: FDP80N06 N-Channel UniFETTM MOSFET 60 V, 80 A, 10 mΩ Features Description • RDS on = 8.5 mΩ (Typ.) @ VGS = 10 V, ID = 40 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDP80N06
145pF)
O-220
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ZXMN0545G4TA
Abstract: ZXMN0545G4 ZXMN0545G4TC
Text: ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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ZXMN0545G4
140mA
OT223
OT223
ZXMN0545G4TA
ZXMN0545G4
ZXMN0545G4TC
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Untitled
Abstract: No abstract text available
Text: ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high
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ZXMN0545G4
140mA
OT223
OT223
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mosfet 4702
Abstract: 72728 IXZ2210N50L 24016 AN 78259 78442 TL 4941 69106 j934 mosfet 4942
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C MRI, Broadcast & Communications Applications 150V operating 300 & 550 Watts
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IXZ210N50L
IXZ2210N50L
175MHz
IXZ210N50L
175MHz
mosfet 4702
72728
IXZ2210N50L
24016 AN
78259
78442
TL 4941
69106
j934
mosfet 4942
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Untitled
Abstract: No abstract text available
Text: FDA24N50 N-Channel UniFETTM MOSFET 500 V, 24 A, 190 mΩ Features Description • RDS on = 160 mΩ (Typ.) @ VGS = 10 V, ID = 12 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA24N50
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Abstract: No abstract text available
Text: FDA69N25 N-Channel UniFETTM MOSFET 250 V, 69 A, 41 mΩ Features Description • RDS on = 34 mΩ (Typ.) @ VGS = 10 V, ID = 34.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDA69N25
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Abstract: No abstract text available
Text: FDB44N25 N-Channel UniFETTM MOSFET 250 V, 44 A, 69 mΩ Features Description • RDS on = 69 mΩ (Max.) @ VGS = 10 V, ID = 22 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB44N25
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Untitled
Abstract: No abstract text available
Text: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998
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RFF60P06
RFF60P06
MIL-S-19500.
150oC,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
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Untitled
Abstract: No abstract text available
Text: FDB28N30 N-Channel UniFETTM MOSFET 300 V, 28 A, 129 mΩ Features Description • RDS on = 108 mΩ (Typ.) @ VGS = 10 V, ID = 14 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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FDB28N30
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