9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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Untitled
Abstract: No abstract text available
Text: N-Channel QFET MOSFET 60 V, 17.2 A, 42 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially
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Untitled
Abstract: No abstract text available
Text: N-Channel QFET MOSFET 60 V, 17.2 A, 42 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).
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US6M11
R0039A
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).
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US6M11
R0039A
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FQU20N06L
Abstract: No abstract text available
Text: N-Channel QFET MOSFET 60 V, 17.2 A, 42 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
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FQD20N06L
FQU20N06L
FQU20N06L
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UK4145 Preliminary Power MOSFET SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The UTC UK4145 is N-channel power MOSFET, suitable for high current switching applications. FEATURES * Low on-state resistance: RDS ON =10mΩ (Max.) @ VGS =10V, ID =42A
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UK4145
UK4145
5300pF
UK4145L-TA3-T
UK4145G-TA3-T
UK4145L-TQ2-T
UK4145G-TQ2-T
UK4145L-TQ2-R
UK4145G-TQ2-R
O-220
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Untitled
Abstract: No abstract text available
Text: FQA46N15 / FQA46N15_F109 N-Channel QFET MOSFET 150 V, 50 A, 42 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
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FQA46N15
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UK4145 Preliminary Power MOSFET SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The UTC UK4145 is N-channel power MOSFET, suitable for high current switching applications. FEATURES * Low on-state resistance: RDS ON =10mΩ (Max.) @ VGS =10V, ID =42A
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UK4145
UK4145
5300pF
UK4145L-TA3-T
UK4145G-TA3-T
O-220
QW-R502-364
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15N08L
Abstract: 15N08 NTD15N08 NTD15N08L Integrated Starter Alternator
Text: NTD15N08, NTD15N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80V devices are designed for Power Management solutions in 42 V Automotive
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NTD15N08,
NTD15N08L
15N08
15N0hibbertco
r14525
NTD15N08/D
15N08L
NTD15N08
NTD15N08L
Integrated Starter Alternator
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ISS-53
Abstract: uk4145
Text: UNISONIC TECHNOLOGIES CO., LTD UK4145 Preliminary Power MOSFET SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The UTC UK4145 is N-channel power MOSFET, suitable for high current switching applocations. FEATURES * Low on-state resistance: RDS ON =10mΩ (Max.) @ VGS =10V, ID =42A
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UK4145
UK4145
5300pF
UK4145L-TA3-T
UK4145G-TA3-T
O-220
QW-R502-364
ISS-53
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FQp46n15
Abstract: No abstract text available
Text: FQP46N15 N-Channel QFET MOSFET 150 V 45.6 A, 42 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially
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FQP46N15
FQP46N15
100pF)
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20N08
Abstract: 20N08L NTD20N08 NTD20N08L
Text: NTD20N08, NTD20N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive
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NTD20N08,
NTD20N08L
20N08
20NAN
r14525
NTD20N08/D
20N08L
NTD20N08
NTD20N08L
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12n08
Abstract: 12N08l NTD12N08L NTD12N08
Text: NTD12N08, NTD12N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive
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NTD12N08,
NTD12N08L
12N08
r14525
NTD12N08/D
12N08l
NTD12N08L
NTD12N08
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Untitled
Abstract: No abstract text available
Text: FQP46N15 N-Channel QFET MOSFET 150 V, 45.6 A, 42 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQP46N15
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Untitled
Abstract: No abstract text available
Text: FDPF13N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 12 A, 540 m Features Description • RDS on = 420 (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDPF13N50FT
FDPF13N50FT
100nsec
200nsec
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3n08
Abstract: NTMD3N08 NTMD3N08L starter alternator electronic power steering 3N08L
Text: NTMD3N08, NTMD3N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive
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NTMD3N08,
NTMD3N08L
3N08AN
r14525
NTMD3N08/D
3n08
NTMD3N08
NTMD3N08L
starter alternator
electronic power steering
3N08L
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Untitled
Abstract: No abstract text available
Text: FDPF13N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 12 A, 540 mΩ Features Description • RDS on = 420 mΩ (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.
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FDPF13N50FT
100nsec
200nsec
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Untitled
Abstract: No abstract text available
Text: FQU20N06L N-Channel QFET MOSFET 60 V, 17.2 A, 42 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state
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FQU20N06L
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NTD26N08
Abstract: NTD26N08L
Text: NTD26N08, NTD26N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive
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NTD26N08,
NTD26N08L
26N08
26Nhibbertco
r14525
NTD26N08/D
NTD26N08
NTD26N08L
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2n08
Abstract: 2n08l Catalytic Converter NTF2N08 NTF2N08L NTF3N08 NTF3N08L
Text: NTF2N08, NTF2N08L Product Preview 80 V Power MOSFET ON Semiconductor utilizes its latest MOSFET technology process to manufacture 80 V power MOSFET devices to achieve the lowest possible on–resistance per silicon area. These 80 V devices are designed for Power Management solutions in 42 V Automotive
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NTF2N08,
NTF2N08L
2N08L
r14525
NTF2N08/D
2n08
Catalytic Converter
NTF2N08
NTF2N08L
NTF3N08
NTF3N08L
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch+Pch MOSFET US6M11 Structure Silicon N-channel MOSFET / Silicon P-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT6 Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode.
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US6M11
R0039A
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MOSFET P-channel SOT-23
Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
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2N7000
2N7002L
MOSFET60
OT-23
BS107,
BS107A
BS108
BS170
NUD3124
NUD3160
MOSFET P-channel SOT-23
NTD80N02
NTD18N06
NTMS3P03R2
MLD1N06CL
NTHD5904N
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Untitled
Abstract: No abstract text available
Text: LM2725,LM2726 LM2725/LM2726 High Speed Synchronous MOSFET Drivers Literature Number: SNVS144B LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that drive both the top MOSFET and bottom MOSFET in a pushpull structure simultaneously. It takes a logic level PWM input
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LM2725
LM2726
LM2725/LM2726
SNVS144B
LM272/clocks
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