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    MOSFET 2SK3683 Search Results

    MOSFET 2SK3683 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 2SK3683 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2Sk3683

    Abstract: 2SK3683-01MR equivalent 2SK3683-01MR MOSFET 2sk3683 Data sheet
    Text: 2SK3683-01MR 200309 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators


    Original     		PDF 2SK3683-01MR O-220F 2Sk3683 2SK3683-01MR equivalent 2SK3683-01MR MOSFET 2sk3683 Data sheet

    2SK3683

    Abstract: 2SK3683-01MR
    Text: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3683-01MR 500V/0.38Ω/19A 1) Package TO-220F15R 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Ratings Units V DS 500 V Continuous Drain Current ID ±19 A Pulsed Drain Current


    Original     		PDF 2SK3683-01MR 00V/0 38/19A) O-220F15R MT5F12582 2SK3683 2SK3683-01MR

    2SK3679

    Abstract: 2sk3598 2SK3599-01MR 2SK3677-01MR 2sk3680-01 2sk3580-01mr 2sk3603 2SK3532 2SK3469-01MR 2SK3532-01MR
    Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse RDS (on) PD ＊2 Max. ＊1


    Original     		PDF 2SK3598-01 2SK3599-01MR 2SK3600-01L, 2SK3601-01 2SK3644-01 2SK3645-01MR 2SK3646-01L, 2SK3647-01 2SK3586-01 2SK3587-01MR 2SK3679 2sk3598 2SK3677-01MR 2sk3680-01 2sk3580-01mr 2sk3603 2SK3532 2SK3469-01MR 2SK3532-01MR

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28

    YG97256

    Abstract: 2SK3683 MOSFET 2sk3683 fa5551 FA5550
    Text: Under development FA5550 / 51 Fuji Switching Power Supply Control IC FA5550 / 51 Application Note (Under development) August 2007 Fuji Electric Device Technology Co.,Ltd. Rev.0 Augu-2007 1 Fuji Electric Device Technology (Under development) FA5550 / 51 Caution


    Original     		PDF FA5550 Augu-2007 200uF 500uF YG97256 2SK3683 MOSFET 2sk3683 fa5551