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    MOSFET 250V 4A Search Results

    MOSFET 250V 4A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    H5N2508DL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 7A 630Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
    2SK1761-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 12A 350Mohm To-220Ab Visit Renesas Electronics Corporation
    H5N2505DSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 5A 890Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    H5N2503P-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 50A 55Mohm To-3P Visit Renesas Electronics Corporation
    RJK2555DPA-00#J0 Renesas Electronics Corporation Nch Single Power Mosfet 250V 17A 104Mohm Wpak Visit Renesas Electronics Corporation

    MOSFET 250V 4A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E14

    Abstract: 2E12 FSL234R4 JANSR2N7397 Rad Hard in Fairchild for MOSFET hirel systems transformer 3OBE
    Text: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 97 /Subject (4A, 250V, 0.610 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.610


    Original     		PDF JANSR2N7397 FSL234R4 R2N73 1E14 2E12 FSL234R4 JANSR2N7397 Rad Hard in Fairchild for MOSFET hirel systems transformer 3OBE

    Rad Hard in Fairchild for MOSFET

    Abstract: mosfet 250V 4A 1E14 2E12 FRL234R4 JANSR2N7278 MOSFET A3
    Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 78 /Subject (4A, 250V, 0.700 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.700


    Original     		PDF JANSR2N7278 FRL234R4 R2N72 1000K 100opment. Rad Hard in Fairchild for MOSFET mosfet 250V 4A 1E14 2E12 FRL234R4 JANSR2N7278 MOSFET A3

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSS234R4 JANSR2N7401
    Text: JANSR2N7401 August 1998 Formerly FSS234R4 [ /Title JANS R2N74 01 /Subject (6A, 250V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Rad Hard, NChannel Power MOSFET) /Creator () 6A, 250V, 0.600 Ohm, Rad Hard,


    Original     		PDF JANSR2N7401 FSS234R4 R2N74 Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS234R4 JANSR2N7401

    1E14

    Abstract: 2E12 FSL234R4 JANSR2N7397
    Text: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7397 FSL234R4 1E14 2E12 FSL234R4 JANSR2N7397

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7397 FSL234R4

    irf634

    Abstract: st 393 IRF634FP JESD97 IRF63 irf6
    Text: IRF634 IRF634FP N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay Power MOSFET General features Type VDSS RDS on ID IRF634 250V <0.45Ω 8A IRF634FP 250V <0.45Ω 8A 3 • Extremely High dv/dt Capability ■ 100% Avalanche Tested 1 TO-220 3 2


    Original     		PDF IRF634 IRF634FP O-220 /TO-220FP O-220 O-220FP irf634 st 393 IRF634FP JESD97 IRF63 irf6

    IRF634

    Abstract: IRF634FP JESD97
    Text: IRF634 IRF634FP N-channel 250V - 0.38Ω - 8A TO-220 /TO-220FP Mesh Overlay Power MOSFET General features Type VDSS RDS on ID IRF634 250V <0.45Ω 8A IRF634FP 250V <0.45Ω 8A 3 • Extremely High dv/dt Capability ■ 100% Avalanche Tested 1 3 2 1 TO-220


    Original     		PDF IRF634 IRF634FP O-220 /TO-220FP O-220 O-220FP IRF634 IRF634FP JESD97

    1E14

    Abstract: 2E12 FRL234D FRL234H FRL234R
    Text: FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 4A, 250V, RDS on = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL234D, FRL234R, FRL234H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRL234D FRL234H FRL234R

    Untitled

    Abstract: No abstract text available
    Text: FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 4A, 250V, RDS on = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL234D, FRL234R, FRL234H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD

    N-channel enhancement 200V 60A

    Abstract: TC 9310 IC DATA SHEET 1E14 2E12 FRL234D FRL234H FRL234R
    Text: FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 4A, 250V, RDS on = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL234D, FRL234R, FRL234H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD N-channel enhancement 200V 60A TC 9310 IC DATA SHEET 1E14 2E12 FRL234D FRL234H FRL234R

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 4A, 250V, rDS ON = 0.700Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings


    Original     		PDF JANSR2N7278 FRL234R4 1000K

    1E14

    Abstract: 2E12 FRL234R4 JANSR2N7278
    Text: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.700Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		PDF JANSR2N7278 FRL234R4 1000K 1E14 2E12 FRL234R4 JANSR2N7278

    1E14

    Abstract: 2E12 FRM234D FRM234H FRM234R
    Text: FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 7A, 250V, RDS on = 0.70Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRM234D, FRM234R, FRM234H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRM234D FRM234H FRM234R

    1E14

    Abstract: 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3
    Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL234D, FSL234R 1E14 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3

    C08N25

    Abstract: RCD080N25 sot428
    Text: RCD080N25 Nch 250V 8A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 300mW ID 8A PD 20W CPT3 (SC-63) <SOT-428> (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.


    Original     		PDF RCD080N25 300mW SC-63) OT-428> R1102A C08N25 RCD080N25 sot428

    C08N25

    Abstract: No abstract text available
    Text: RCD080N25 Nch 250V 8A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 300mW ID 8A PD 20W CPT3 (SC-63) <SOT-428> (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.


    Original     		PDF RCD080N25 300mW SC-63) OT-428> C08N25 R1102A C08N25

    FSF254D

    Abstract: 1E14 2E12 FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3
    Text: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSF254D, FSF254R FSF254D 1E14 2E12 FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3

    1E14

    Abstract: 2E12 FSF254D FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3 ic 356
    Text: FSF254D, FSF254R 18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 18A, 250V, rDS ON = 0.170Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSF254D, FSF254R 1E14 2E12 FSF254D FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3 ic 356

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FRM234D FRM234H FRM234R equivalent components of transistor 772
    Text: FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, , 0V, m, d rd, Package • 7A, 250V, RDS on) = 0.70Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		PDF FRM234D, FRM234R, FRM234H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD Rad Hard in Fairchild for MOSFET 1E14 2E12 FRM234D FRM234H FRM234R equivalent components of transistor 772

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7397 SS MAR Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.61 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL234R4 JANSR2N7397 MIL-STD-750, MIL-S-19500, 500ms;

    Untitled

    Abstract: No abstract text available
    Text: 33 JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 4A, 250V, rDS ON = 0.700Q The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings


    OCR Scan     		PDF FRL234R4 JANSR2N7278 1000K MIL-STD-750, MIL-S-19500, 500ms;

    Untitled

    Abstract: No abstract text available
    Text: sb H A R R IS S E M I C O N D U C T O R FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 4A, 250V, RDS on = 0.700ft TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRL234D, FRL234R, FRL234H O-205AF 700ft 100KRAD 300KRAD 1000KRAD 3000KRAD FL234UIS

    Untitled

    Abstract: No abstract text available
    Text: FRM234D, FRM234R, FRM234H W /o œ S S e m ico n d ucto r y y 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 7A, 250V, RDS on = 0.70£i TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts •


    OCR Scan     		PDF FRM234D, FRM234R, FRM234H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD O-204AA

    srfe

    Abstract: 1E13
    Text: 33 H A R R IS S E M I C O N D U C T O R FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 7A, 250V, RDS on = 0.70Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRM234D, FRM234R, FRM234H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD srfe 1E13