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Abstract: No abstract text available
Text: ISL6144 Data Sheet October 6, 2011 FN9131.7 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode
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fuse fall
Abstract: 9V 1A smps
Text: ISL6144 Data Sheet October 6, 2011 FN9131.7 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode
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ISL6144
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REG IC 48V IN 12V 10A OUT ic
Abstract: smps Power Supply Schematic Diagram 40A Adjustable Power Supply Schematic Diagram 48V SMPS DRIVERS high-speed power MOSFET smps 10w 12V smps 10w 5V ISL6144 ISL6144IRZA ISL6144IVZA
Text: ISL6144 Data Sheet January 6, 2011 FN9131.6 High Voltage ORing MOSFET Controller Features The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET s increases power distribution efficiency and availability when replacing a power ORing diode
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ISL6144
FN9131
ISL6144
REG IC 48V IN 12V 10A OUT ic
smps Power Supply Schematic Diagram
40A Adjustable Power Supply Schematic Diagram
48V SMPS
DRIVERS high-speed power MOSFET
smps 10w 12V
smps 10w 5V
ISL6144IRZA
ISL6144IVZA
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Untitled
Abstract: No abstract text available
Text: LM2725,LM2726 LM2725/LM2726 High Speed Synchronous MOSFET Drivers Literature Number: SNVS144B LM2725/LM2726 High Speed Synchronous MOSFET Drivers General Description The LM2725/LM2726 is a family of dual MOSFET drivers that drive both the top MOSFET and bottom MOSFET in a pushpull structure simultaneously. It takes a logic level PWM input
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LM2725
LM2726
LM2725/LM2726
SNVS144B
LM272/clocks
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Abstract: No abstract text available
Text: General Information www.vishay.com Vishay Siliconix Useful Web Links COMPARE MOSFET PACKAGES www.vishay.com/mosfets/tapereel-package-list/ FEATURED MOSFET FAMILIES CHECK DISTRIBUTOR STOCK
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e/tradeshows/powermanagement/2011/mosfets
02-Nov-11
636hay
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500w mosfet power amplifier circuit diagram
Abstract: RF POWER MOSFET IXZ421DF18N50 500w hf power amplifier circuit diagram power mosfet triggering circuit DEIC421 mosfet triggering circuit 500w power amplifier PCB layout driver mosfet mosfet HF amplifier
Text: IXZ421DF18N50 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC421 Driver combined with a IXZ318N50 MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability
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IXZ421DF18N50
DEIC421
IXZ318N50
IXZ421DF18N50
500w mosfet power amplifier circuit diagram
RF POWER MOSFET
500w hf power amplifier circuit diagram
power mosfet triggering circuit
mosfet triggering circuit
500w power amplifier PCB layout
driver mosfet
mosfet HF amplifier
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DOC-70
Abstract: No abstract text available
Text: General Information www.vishay.com Vishay Siliconix Useful Web Links COMPARE MOSFET PACKAGES www.vishay.com/mosfets/tapereel-package-list/ FEATURED MOSFET FAMILIES CHECK DISTRIBUTOR STOCK
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e/tradeshows/powermanagement/2011/mosfets
AN832
AN838
11-Aug-14
DOC-70
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QFN40
Abstract: application note gate driver with bootstrap capacitor PGND19
Text: NCP5369 Integrated Driver and MOSFET The NCP5369 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5369
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QFN40
application note gate driver with bootstrap capacitor
PGND19
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Abstract: No abstract text available
Text: NCP5369 Integrated Driver and MOSFET The NCP5369 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5369
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ncp53
Abstract: QFN-40
Text: NCP5369 Integrated Driver and MOSFET The NCP5369 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5369
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QFN40
485AZ
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ncp53
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Untitled
Abstract: No abstract text available
Text: LM2724A LM2724A High Speed 3A Synchronous MOSFET Driver Literature Number: SNVS242A LM2724A High Speed 3A Synchronous MOSFET Driver chronization operation of the bottom MOSFET can be disabled by pulling the SYNC pin to ground. General Description The LM2724A is a dual N-channel MOSFET driver which can
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SNVS242A
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EMC for PCB Layout
Abstract: AN10874 thermal analysis on pcb JESD51-2
Text: AN10874 LFPAK MOSFET thermal design guide Rev. 02 — 27 January 2011 Application note Document information Info Content Keywords LFPAK, MOSFET, thermal analysis, design and performance, thermal considerations, thermal resistance, junction to ambient, junction to
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JESD51,
EMC for PCB Layout
AN10874
thermal analysis on pcb
JESD51-2
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Text: FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Ω Features Description • RDS on = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
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Text: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
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Text: SCH2805 SCH2805 Features Ordering number : ENN7760 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)
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SCH2805
ENN7760
MCH3314)
SB0105)
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Abstract: No abstract text available
Text: FDD3N50NZ N-Channel UniFETTM II MOSFET 500 V, 2.5 A, 2.5 Ω Features Description • RDS on = 2.1 Ω (Typ.) @ VGS = 10 V, ID = 1.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest
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Text: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Features Description • RDS on = 1.9 (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the
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ISL55110
Abstract: ISL55110IRZ ISL55110IVZ ISL55111 ISL55111IRZ ISL55111IVZ TB347 110IRZ inverter 12v to 220 ac mosfet based
Text: ISL55110, ISL55111 Data Sheet March 17, 2011 FN6228.4 Dual, High Speed MOSFET Driver Features The ISL55110 and ISL55111 are dual high speed MOSFET drivers intended for applications requiring accurate pulse generation and buffering. Target applications include
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ISL55111IVZ
TB347
110IRZ
inverter 12v to 220 ac mosfet based
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Text: IS31BL3506A 1.0MHZ BOOST CONVERTER WITH 35V INTERNAL MOSFET SWITCH December 2011 GENERAL DESCRIPTION FEATURES IS31BL3506A is a boost converter featuring an integrated MOSFET switch designed for driving series strings of LED or other device. Input operating voltage
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Text: AN11113 LFPAK MOSFET thermal design guide - Part 2 Rev. 2 — 16 November 2011 Application note Document information Info Content Keywords LFPAK, MOSFET, thermal analysis, design and performance, thermal considerations, thermal resistance, thermal vias, SMD, surface-mount,
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AN10874)
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Text: Issue Number | 001 June 2011 New Product Announcement DMC4040SSD Complementary Dual MOSFET reduces motor losses For use in low voltage single and three-phase brushless DC BLDC motor control applications, the DMC4040SSD complementary dual MOSFET from Diodes
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TPC8406
S14564DY
FDS4987C
ZXBM102x
ZXBM200x
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Abstract: No abstract text available
Text: FDA38N30 N-Channel UniFETTM MOSFET 300 V, 38 A, 85 mΩ Features Description • RDS on = 70 mΩ (Typ.) @ VGS = 10 V, ID = 19 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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mosfet 250V 4A
Abstract: No abstract text available
Text: FDD5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.0 A, 2 Features Description • RDS on = 1.65 (Typ.) @ VGS = 10 V, ID = 2.0 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state
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mosfet 250V 4A
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Abstract: No abstract text available
Text: FDD18N20LZ N-Channel UniFETTM MOSFET 200 V, 16 A, 125 mΩ Features Description • R DS on = 125 mΩ (Typ.) @ VGS = 10 V, ID = 8 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to
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