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    MOSFET 1NV Search Results

    MOSFET 1NV Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 1NV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4351

    Abstract: A6 ZENER DIODE "Dual npn Transistor" J201 spice intersil JFET TO 18 J201 N-channel JFET to 90 intersil JFET JFET NPN AMPLIFIER bare Die mosfet
    Text: 2N4351 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 2N4351 HIGH DRAIN CURRENT ID = 100mA HIGH GAIN TO-72 BOTTOM VIEW gfs = 1000µS 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		PDF 2N4351 2N4351 100mA 375mW 100mA A6 ZENER DIODE "Dual npn Transistor" J201 spice intersil JFET TO 18 J201 N-channel JFET to 90 intersil JFET JFET NPN AMPLIFIER bare Die mosfet

    2n4416 transistor spice

    Abstract: low noise dual P-Channel JFET 3N190 P-Channel Depletion Mode FET dual gate n-channel mosfet transistor 2n3955 transistor spice single HIGH SPEED POWER MOSFET intersil JFET TO 18 3N191 SPICE n-channel mosfet transistor low power
    Text: 3N190 3N191 P-CHANNEL DUAL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT IGSS ≤ ±10pA LOW TRANSFER CAPACITANCE Crss ≤ 1.0pF 1 TO-78 BOTTOM VIEW C ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 3N190 3N191 3N190 3N191 300mW 525mW 2n4416 transistor spice low noise dual P-Channel JFET P-Channel Depletion Mode FET dual gate n-channel mosfet transistor 2n3955 transistor spice single HIGH SPEED POWER MOSFET intersil JFET TO 18 3N191 SPICE n-channel mosfet transistor low power

    U401 mosfet

    Abstract: 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice
    Text: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage


    Original     		PDF 3N163, 3N164 3N163 3N164 375mW -30ithic U401 mosfet 3N163 SPICE P-Channel Depletion Mode FET a7 P-CHANNEL FET J506 "Dual npn Transistor" 2N3955 LS301 J201 N-channel JFET to 90 J201 spice

    P-Channel Depletion Mode FET

    Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
    Text: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)


    Original     		PDF 3N165, 3N166 3N165 3N166 P-Channel Depletion Mode FET 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor

    intersil jfet

    Abstract: intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice
    Text: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)


    Original     		PDF 3N170 3N171 3N170 3N171 300mW intersil jfet intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice

    high speed Zener Diode

    Abstract: "Dual PNP Transistor" PAD1 Spice a7 P-CHANNEL LS320 j177 TRANSISTOR "Dual npn Transistor" LS3250 2n5019 ultra low noise
    Text: NC G2 G1 NC NC G2 G1 NC Linear Integrated Systems - Lead Pb Free / RoHS Compliant Parts List MAIN MENU Home Page Page 1 of 3 Linear Integrated Systems Lead-Free / RoHS Fact Sheet Products Support Literature Spice Models Downloads Contact Us Distributors


    Original     		PDF

    diode ZENER A8

    Abstract: P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice
    Text: SD5000/5001/5400/5401 QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED Linear Integrated Systems Product Summary Features Benefits Applications • Quad SPST Switch with Zener Input Protection • Low Interelectrode Capacitance and Leakage • Ultra-High Speed Switching—tON: 1 ns


    Original     		PDF SD5000/5001/5400/5401 SD5000/5400 diode ZENER A8 P-Channel Depletion Mosfets Siliconix Dual N-Channel JFET bare die zener Bi-Directional N-Channel mosfet Siliconix 2N5912 diode ZENER A8 5400 sd211de spice

    003A

    Abstract: 4502 MOSFET
    Text: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SK2807-01 L,S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E ¡APPROVED I DR A W N CHECKED Í Fuji Electric Co.,Ltd. V, Y 0257-R-004a I.Scope This specifies Fuji Power MOSFET 2SK2807-01L.S


    OCR Scan     		PDF 2SK2807-01 0257-fi-004a 0257-R-003a 0257-R-003a 003A 4502 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30ASH-2 HIGH-SPEED SWITCHING USE FS30ASH-2 • 2.5V DRIVE • VD S S . •100V • rDS ON (MAX) . • I d .


    OCR Scan     		PDF FS30ASH-2

    fs10smj-3

    Abstract: No abstract text available
    Text: MITSUBISHI Nch POWER MOSFET ! FS10SMJ-3 | HIGH-SPEED SWITCHING USE FS10SMJ-3 • 4V DRIVE • V dss .150V • ros ON (MAX) . 160mQ • Id . 10A


    OCR Scan     		PDF FS10SMJ-3 160mQ fs10smj-3

    MITSUBISHI CNC

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS70KMJ-03 HIGH-SPEED SWITCHING USE FS70KMJ-03 • 4V D R IVE • VDSS .30V • rDS ON (MAX) .1 2 m Q


    OCR Scan     		PDF FS70KMJ-03 MITSUBISHI CNC

    P channel MOSFET 50A

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET ! FS100UM-03 I f HIGH-SPEED SWITCHING USE j FS100UM-03 • 10V DRIVE • VDSS .30V • rDS ON (MAX) . 5 .4 m Q


    OCR Scan     		PDF FS100UM-03 FS100UM-03 100ns P channel MOSFET 50A

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS10KM-03 HIGH-SPEED SWITCHING USE FS10KM-03 OUTLINE DRAWING Dimensions in mm 10±0.3 2.8 ±0.2 • 10V DRIVE • VDSS . 30V • TDS ON (MAX) .


    OCR Scan     		PDF FS10KM-03 O-220FN

    710323

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET ! FS30UMH-03 | HIGH-SPEED SWITCHING USE FS30UMH-03 OUTLINE DRAWING Dimensions in mm 10.5MAX. . 4 .5 1.3 # • 2.5V DRIVE • Vdss . 30V • rDS ON (MAX) .46mi!


    OCR Scan     		PDF FS30UMH-03 O-220 710323

    H12B

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS2KMJ-3 HIGH-SPEED SWITCHING USE FS2KMJ-3 OUTLINE DRAWING D im en sio n s in mm 10 ±0.3 2.6 ±0.2 • 4V DRIVE • Vd ss . •150V • rDS ON (MAX) .


    OCR Scan     		PDF O-220FN H12B

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS50VSJ-3 HIGH-SPEED SWITCHING USE FS50VSJ-3 OUTLINE DRAWING Dimensions in mm ,4-5 i 1.3 I 0 .5 • 4V DRIVE • V D S S . •150V • TDS ON (MAX) .


    OCR Scan     		PDF FS50VSJ-3 125ns O-220S

    fs70um-03

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS70UM-03 HIGH-SPEED SWITCHING USE FS70UM-03 OUTLINE DRAWING Dimensions in mm 10.5MAX. , 4.5 , 1.3 0 3.6 ¡ u / - 2.54 / 2.54 0.5 r < i! «s .1 2 3 4> • 10V DRIVE • V d s s .


    OCR Scan     		PDF FS70UM-03 14mi2 O-220 fs70um-03

    02 diode case R-1

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS70UMJ-2 HIGH-SPEED SWITCHING USE FS70UMJ-02 OUTLINE DRAWING D im ensions in mm t 4.5 ^ 1.3 r# 1 : 2.6 • 4 V D R IV E • V dss .100V • ros ON (MAX) .17m Q


    OCR Scan     		PDF FS70UMJ-2 FS70UMJ-02 O-220 571Q-22 02 diode case R-1

    BUZ78A

    Abstract: cascode mosfet switching universal flyback cascode mosfet current mirror ersa PWR-SMP520BNC PWR-SMP520 cascode PWM IC 16-PIN DIP BUK444-800A
    Text: PWR-SMP520 PWM Controller 1C 110/220 VAC Input MOSFET Cascode Drive Output POWER INTEGRATIONS, INC. Product Highlights Integrated Pre-regulator and CMOS Controller • Im plem ents isolated pow er supply • Supplies up to 10 W from rectified 110 VAC and 20 W


    OCR Scan     		PDF PWR-SMP520 PWR-SMP520 BUZ78A cascode mosfet switching universal flyback cascode mosfet current mirror ersa PWR-SMP520BNC cascode PWM IC 16-PIN DIP BUK444-800A

    24v inverters schematic diagram

    Abstract: IVN5200HND IVN5200HNE IVN5200HNF IVN5201HND IVN5201HNE IVN5201HNF IVNS201HND IVN5201
    Text: oblili " IVN5200/1 HN Series n-Channel Enhancement-mode Vertical Power MOSFET FEATURES • High speed, high current switching A P P L IC A T IO N S • Switching power supplies • Inherent current sharing capability when paralleled • DC to DC inverters


    OCR Scan     		PDF IVN5200/1 IVN5200HND, IVN5201HND IVN5200HNE, IVN5201HNE. IVN5200HNF, IVN5201HNF. IVN520 24v inverters schematic diagram IVN5200HND IVN5200HNE IVN5200HNF IVN5201HND IVN5201HNE IVN5201HNF IVNS201HND IVN5201

    12V dc to 60V dc circuit diagram

    Abstract: 24v inverters schematic diagram IVN5200 IVN5200KND IVN5201 IVN5200KNE IVN5200KNF IVN5201KND IVN5201KNE IVN5201KNF
    Text: IVN5200/1 KN Series n-Channel Enhancement-mode Vertical Power MOSFET A PP LIC A TIO N S • Switching power supplies FEATURES • High speed, high current switching • Inherent current sharing capability when paralleled • DC to DC inverters • Extremely low drive currents


    OCR Scan     		PDF IVN5200/1 IVN5200KND, IVN5201KND. IVN5200KNE, IVN5201KNE IVN5200KNF, IVN5201KNF 12V dc to 60V dc circuit diagram 24v inverters schematic diagram IVN5200 IVN5200KND IVN5201 IVN5200KNE IVN5200KNF IVN5201KND IVN5201KNE IVN5201KNF

    mosfet 4425

    Abstract: 4425 mosfet 4425 ic 6783a 4424 SO 8
    Text: WTELEDYNE COMPONENTS TC4423 TC4424 TC4425 3A DUAL HIGH-SPEED MOSFET DRIVERS FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Tough CMOS Construction Latch-Up Protected: Will Withstand 1.5A Reverse Current Logic Input Will Withstand Negative Swing Up to 5V ESD kV


    OCR Scan     		PDF TC4423 TC4424 TC4425 mosfet 4425 4425 mosfet 4425 ic 6783a 4424 SO 8

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Pch POWER MOSFET FY8ABJ-03 HIGH-SPEED SWITCHING USE FY8ABJ-03 OUTLINE DRAWING Dim ensions in mm 1.8 MAX. 1.27 Q ®® SOURCE GATE ® ® ® ® DRAIN • 4V DRIVE • V d s s .-30V • rDS ON (MAX). 20mi2


    OCR Scan     		PDF FY8ABJ-03 FY8ABJ-03 20mi2

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS5VSJ-06 HIGH-SPEED SWITCHING USE FS5VSJ-06 OUTLINE DRAWING ^ _10.5MAX\ Dimensions in mm ^ < 1.3 ; \ " T i l= n ->-0.3 y -o 4 0.5 , ; 1 0.8 J 11 'J : 2 -3: O :- 2 -.4 c\i 5 GATE DRAIN ,3) SOURCE ij DRAIN • 4V DRIVE • VDSS .60V


    OCR Scan     		PDF FS5VSJ-06 O-220S 1CH23