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    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200803 Issued Date : 2005.03.13 Revised Date : Page No. : 1/5 MICROELECTRONICS CORP. H2N7002K N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-Source Voltage . 60 V


    Original
    PDF MOS200803 H2N7002K 183oC 217oC 260oC

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : MOS200803 Issued Date : 2005.03.13 Revised Date :2010,03,04 Page No. : 1/5 MICROELECTRONICS CORP. H2N7002K N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-Source Voltage . 60 V


    Original
    PDF MOS200803 H2N7002K 183oC 217oC 260oC