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    KOA Speer Electronics Inc MOS1CT528R182J

    RES 1.8K OHM 5% 1W AXIAL
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    DigiKey MOS1CT528R182J Cut Tape 7,907 1
    • 1 $0.34
    • 10 $0.188
    • 100 $0.1095
    • 1000 $0.06724
    • 10000 $0.06724
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    MOS1CT528R182J Reel 4,000 4,000
    • 1 -
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    • 10000 $0.04561
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    KOA Speer Electronics Inc MOS1CVTPA1001F

    RES 1K OHM 1% 1W AXIAL
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    DigiKey MOS1CVTPA1001F Cut Tape 5,175 1
    • 1 $0.63
    • 10 $0.358
    • 100 $0.2124
    • 1000 $0.15214
    • 10000 $0.15214
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    MOS1CVTPA1001F Ammo Pack 4,500 1,500
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    KOA Speer Electronics Inc MOS1-2CT52R560J

    RESISTOR
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    DigiKey MOS1-2CT52R560J Cut Tape 4,990 1
    • 1 $0.29
    • 10 $0.15
    • 100 $0.0883
    • 1000 $0.0579
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    KOA Speer Electronics Inc MOS1-2CT52R152J

    RES 1.5K OHM 5% 1/2W AXIAL
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    DigiKey MOS1-2CT52R152J Cut Tape 4,884 1
    • 1 $0.28
    • 10 $0.155
    • 100 $0.0902
    • 1000 $0.05508
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    KOA Speer Electronics Inc MOS1-2CT52R220J

    RES 22 OHM 5% 1/2W AXIAL
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    DigiKey MOS1-2CT52R220J Cut Tape 4,032 1
    • 1 $0.28
    • 10 $0.155
    • 100 $0.0902
    • 1000 $0.05508
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    Find more MOS1 price and stock on Findchips.com

    MOS1 Datasheets (117)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MOS-1110Y-0101E Advantech Uncategorized - Miscellaneous - ISOLATED 16 DI/8 DO 1-CH DB37 Original PDF
    MOS-1120Y-0201E Advantech Uncategorized - Miscellaneous - ISOLATED RS-232 2-CH DB9 PCIE Original PDF
    MOS-1120Y-1401E Advantech Uncategorized - Miscellaneous - NON-ISOLATED RS-232 DB37 4-CH Original PDF
    MOS-1121Y-0201E Advantech Uncategorized - Miscellaneous - ISOLATED RS-422/485 2-CH DB9 Original PDF
    MOS-1121Y-1401E Advantech Uncategorized - Miscellaneous - NON-ISOLATED RS-422/485 DB37 4 Original PDF
    MOS-1130Y-0201E Advantech Uncategorized - Miscellaneous - ISOLATED CANBUS 2-CH DB9 PCIE Original PDF
    MOS-114+ Mini-Circuits VCO / SURF MOUNT / T&R / RoHS Scan PDF
    MOS1/2CT52A333G KOA Speer Electronics MOS 33000 OHM 2% Original PDF
    MOS1/2CT52R100J KOA Speer Electronics MOS 10 OHM 5% Original PDF
    MOS1/2CT52R101J KOA Speer Electronics MOS 100 OHM 5% Original PDF
    MOS1/2CT52R102J KOA Speer Electronics MOS 1000 OHM 5% Original PDF
    MOS1/2CT52R103J KOA Speer Electronics MOS 10000 OHM 5% Original PDF
    MOS1/2CT52R121J KOA Speer Electronics MOS 120 OHM 5% Original PDF
    MOS1/2CT52R152J KOA Speer Electronics MOS 1500 OHM 5% Original PDF
    MOS1/2CT52R220J KOA Speer Electronics MOS 22 OHM 5% Original PDF
    MOS1/2CT52R221J KOA Speer Electronics MOS 220 OHM 5% Original PDF
    MOS1/2CT52R222J KOA Speer Electronics MOS 2200 OHM 5% Original PDF
    MOS1/2CT52R270J KOA Speer Electronics MOS 27 OHM 5% Original PDF
    MOS1/2CT52R272J KOA Speer Electronics MOS 2700 OHM 5% Original PDF
    MOS1/2CT52R330J KOA Speer Electronics MOS 33 OHM 5% Original PDF

    MOS1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    270v varistor d - 302

    Abstract: MOS3CT521 mos2ct52 270v varistor d 302 SPR3CL20A BPR58 MOS2CL15A MOS1CT52 KOA CMT SPRX2CL15A
    Text: "QQFOEJY$ QBDLBHJOHMFBEFEDPNQPOFOUT BYJBMUBQJOHT MO1/2*1 MO1/2 MO1 MO1 MO1 MO2 MO2 MO2 MOS1/2*2 MOS1/2 MOS1 MOS1C8 MOS1 MOS2 MOS2 MOS3 MOS3 MOS3 SPR1/4*3 SPR1/4 SPR1/2 SPR1/2 SPR1/2 SPR1 SPR1 SPR2 SPR2 SPR3 SPR3 SPR3 LT1/6 LT1/6 LT1/4 LT1/4 RF16 RF16


    Original     		PDF LP1/16 SDT101A MO1/2CT52 MO1/2CL52 MO1CT52 MO1CT521 MO1CL521 MO2CT521 270v varistor d - 302 MOS3CT521 mos2ct52 270v varistor d 302 SPR3CL20A BPR58 MOS2CL15A MOS1CT52 KOA CMT SPRX2CL15A

    reliability data

    Abstract: MOS13 XPC7410 XPC7410RX
    Text: M XPC7410RX RELIABILITY DATA SUMMARY XPC7410 Fab: Mask: Process: Package: Assy: - Nitro - Information MOS13, Austin, TX K65D HiP6L 25 x 25 mm CBGA, 360 Pin BAT-1, Austin, Tx XPC7410 - Nitro - TECHNOLOGY: MOS13 on the 0.15µm Nominal HiP6L process DYNAMIC LIFETEST (2.35V, 90°C)


    Original     		PDF XPC7410RX XPC7410 MOS13, XPC7410 MOS13 reliability data

    R07DS0904EJ0120

    Abstract: RJK03P0DPA
    Text: Preliminary Datasheet RJK03P0DPA MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 25 A, 7.2 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0904EJ0120 Rev.1.20 Nov 01, 2012 Features •     Low on-resistance Capable of 4.5 V gate drive


    Original     		PDF RJK03P0DPA R07DS0904EJ0120 PWSN0008DD-B RJK03P0DPA

    67e4

    Abstract: MPC107 Reliability Summary voltage acceleration 67E-3 MOS13 RELIABILITY DATA 42e4
    Text: m XPC107A RELIABILITY DATA SUMMARY XPC107A - Chaparral - Information Fab: MOS13, Austin, TX Mask: J82X Process: HiP3 Package: 503 pin, FC-PBGA, Flip Chip on Organic Assy: BAT-1, Austin, Texas MPC107- TECHNOLOGY: MOS13 on the 0.29µm HiP3 process DYNAMIC LIFETEST 3.3V, 125°C


    Original     		PDF XPC107A MOS13, MPC107- MOS13 67e4 MPC107 Reliability Summary voltage acceleration 67E-3 RELIABILITY DATA 42e4

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03P6DPA MOS1 30 V, 15 A, 9.4 mΩ max. MOS2 30 V, 45 A, 2.4 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0905EJ0110 Rev.1.10 Nov 01, 2012 Features •     Low on-resistance Capable of 4.5 V gate drive


    Original     		PDF RJK03P6DPA R07DS0905EJ0110 PWSN0008DD-B

    HAT1110R

    Abstract: HAT1110R-EL-E P Channel Power MOS FET Power Switching
    Text: HAT1110R Silicon P Channel Power MOS FET Power Switching REJ03G0416-0200 Rev.2.00 Oct.07.2004 Features • Capable of –4.5 V gate drive • Low drive current • High density mounting Outline SOP-8 7 8 D D 2 G 5 6 D D 4 G 8 5 7 6 3 1 2 S1 S3 MOS1 MOS2 4


    Original     		PDF HAT1110R REJ03G0416-0200 dut-900 Unit2607 HAT1110R HAT1110R-EL-E P Channel Power MOS FET Power Switching

    RJK03P7DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03P7DPA MOS1 30 V, 15 A, 9.4 mΩ max. MOS2 30 V, 30 A, 5.3 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0906EJ0110 Rev.1.10 Nov 01, 2012 Features •     Low on-resistance Capable of 4.5 V gate drive


    Original     		PDF RJK03P7DPA R07DS0906EJ0110 PWSN0008DD-B RJK03P7DPA

    RJK03P9DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03P9DPA MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 50 A, 2.2 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0907EJ0110 Rev.1.10 Nov 01, 2012 Features •     Low on-resistance Capable of 4.5 V gate drive


    Original     		PDF RJK03P9DPA R07DS0907EJ0110 PWSN0008DD-B RJK03P9DPA

    270v varistor d - 302

    Abstract: 270v varistor d 302 LT1/6CT26 KOA RKL MOSX3CL25A
    Text: Appendix C packaging - leaded components axial tapings Straight Type Name appendix & add. information MO1/2*1 MO1/2 MO1 MO1 MO1 MO2 MO2 MO2 MOS1/2*2 MOS1/2 MOS1 MOS1 MOS1C8 MOS1 MOS2 MOS2 MOS2 MOS3 MOS3 MOS3 MOS3 SPR1/4*3 SPR1/4 SPR1/2 SPR1/2 SPR1/2 SPR1 SPR1


    Original     		PDF LP1/16 SDT101A MO1/2CT52 MO1/2CL52 MO1CT52 MO1CT521 MO1CL521 MO2CT521 270v varistor d - 302 270v varistor d 302 LT1/6CT26 KOA RKL MOSX3CL25A

    Untitled

    Abstract: No abstract text available
    Text: HAT1110R Silicon P Channel Power MOS FET Power Switching REJ03G0416-0200 Rev.2.00 Oct.07.2004 Features • Capable of –4.5 V gate drive • Low drive current • High density mounting Outline SOP-8 7 8 D D 2 G 5 6 D D 4 G 8 5 7 6 3 1 2 S1 S3 MOS1 MOS2 4


    Original     		PDF HAT1110R REJ03G0416-0200 Note-900 Unit2607

    XPC850DEZT80BU

    Abstract: D677 XPC850 XPC850DEZT50BU XPC850DEZT66BU XPC850SRZT50BU XPC850ZT50BU XPC850ZT66BU XPC850ZT80BU SPB32
    Text: Freescale Semiconductor, Inc. Semiconductor Products Sector Networking and Computing Systems Group Networking and Communications System Division PCN: XPC850 XC Qualification in MOS12 Freescale Semiconductor, Inc. Motorola is pleased to announce an additional wafer fabrication facility, MOS12, for the XPC850


    Original     		PDF XPC850 MOS12 MOS12, XPC850 MOS12 MOS11 T545616N01 XPC850DEZT80BU D677 XPC850DEZT50BU XPC850DEZT66BU XPC850SRZT50BU XPC850ZT50BU XPC850ZT66BU XPC850ZT80BU SPB32

    2SK2228

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2228 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOS1V 2SK2228 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm 8.0 APPLICATIONS. 4V GATE DRIVE


    OCR Scan     		PDF 2SK2228 961001EAA2' 2SK2228

    IXGH20N50

    Abstract: ixgh20n50u1 rectifier d 355 n 2000 ic 3404A
    Text: I X Y S CORP 1ÖE D • ODOObTS 4 ■ T - 3 V 13 □IXYS A D V A N C E T E C H N IC A L D A TA S H E E T Data Sheet No. 3404A _ MOS1GBT with Anti-Parallel Rectifier March 1989 PART NUMBER IXGH20N50U1 F E A T U R E S :_


    OCR Scan     		PDF IXGH20N50U1 O-247 384928IX IXGH20N50 ixgh20n50u1 rectifier d 355 n 2000 ic 3404A

    Untitled

    Abstract: No abstract text available
    Text: HAT2029R Silicon N Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-525 C 4th. Edition Features • • • • Low on-resistance Capable o f 2.5 V gate drive Low drive current High density mounting Outline SOP-8 78 5 6 ò ô MOS1 MOS2 S1 S3


    OCR Scan     		PDF HAT2029R ADE-208-525

    MB8116E

    Abstract: mb8116
    Text: FU JITSU MICROELECTRONICS MOS16,384-BIT DYNAMIC RANDOM ACCESS MEMORY MB8116E M M 11AH DESCRIPTION The Fujitsu MB8116 is a fully decoded dynamic NMOS random access memory organized as 16,384 one-bit words. The design is optimized for high speed, high performance applications such


    OCR Scan     		PDF MOS16 384-BIT MB8116 16-pin MB8116E

    Untitled

    Abstract: No abstract text available
    Text: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP- 8 4 7 8 D D 5 6 D D Î-Î Î-Î ó S1 MOS1 ó s3 MOS2 1.3


    OCR Scan     		PDF HAT1025R ADE-208-437 MS-012AA

    2SJ312

    Abstract: No abstract text available
    Text: TO SHIBA 2SJ312 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-MOS1V 2SJ312 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS IN D U ST R IA L A PPLIC A TIO N S U nit in m m TO-22QFL


    OCR Scan     		PDF 2SJ312 O-22QFL 2SJ312

    Untitled

    Abstract: No abstract text available
    Text: HAT2016R Silicon N Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP- 8 7 8 5 6 1 .3 Source 2 .4 Gate 5, 6, 7, 8 Drain MOS1 MOS2


    OCR Scan     		PDF HAT2016R ADE-208-438 MS-012AA

    2SJ304

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ304 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt-MOS1V 2SJ304 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS. 4-Volt Gate Drive Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SJ304 2SJ304

    Untitled

    Abstract: No abstract text available
    Text: HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-471 C 4th. Edition Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SO P-8 7 8 5 6 D D D D ô ò S1 MOS1


    OCR Scan     		PDF HAT1016R ADE-208-471

    Untitled

    Abstract: No abstract text available
    Text: HAT2028R Silicon N-Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-524E 6th. Edition Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP-8 7 8 ò S1 MOS1 5 6 ò S3 1 .3 Source


    OCR Scan     		PDF HAT2028R ADE-208-524E

    MP6801

    Abstract: No abstract text available
    Text: TOSHIBA MP6801 TOSHIBA POWER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE L2- tt-MOS1V 6 IN 1 M P6801 HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS. 3-PHASE MOTOR DRIVE AND BIPOLAR DRIVE OF PULSE MOTOR. INDUSTRIAL APPLICATIONS Unit in mm 31.51-0.2 • •


    OCR Scan     		PDF MP6801 P6801 12Pin) MP6801

    Untitled

    Abstract: No abstract text available
    Text: HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-476 G 8th. Edition Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SO P-8 7 8 D D ts ô S1 MOS1 5 6 D D


    OCR Scan     		PDF HAT1024R ADE-208-476

    Untitled

    Abstract: No abstract text available
    Text: HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP- 8 4 7 8 D D Î-Î ó S1 MOS1 5 6 D D Î-Î ó s3 MOS2 1 .3


    OCR Scan     		PDF HAT1016R ADE-208-471 MS-012AA