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    MOS FET 375 Search Results

    MOS FET 375 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPA2450TL-E1-A Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching Visit Renesas Electronics Corporation
    UPA2521T1H-T1-AT Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching Visit Renesas Electronics Corporation
    UPA1812GR-9JG-E1-A Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching Visit Renesas Electronics Corporation
    UPA2520T1H-T2-AT Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching Visit Renesas Electronics Corporation
    UPA622TT-E1-A Renesas Electronics Corporation N-Channel Mos Field Effect Transistor For Switching Visit Renesas Electronics Corporation

    MOS FET 375 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XP132A01A0SR

    Abstract: No abstract text available
    Text: XP132A01A0SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.105Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package • Applications ■ General Description ■ Features The XP132A01A0SR is a P-Channel Power MOS FET with low on-state


    Original     		PDF XP132A01A0SR XP132A01A0SR

    grm708

    Abstract: transistor 5024 GRM39 RD05MMP1 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power


    Original     		PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) grm708 transistor 5024 GRM39 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537

    TRANSISTOR D 1785

    Abstract: diode GP 829 transistor 3669 6030D RD05MMP1 diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power


    Original     		PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz) TRANSISTOR D 1785 diode GP 829 transistor 3669 6030D diode 6.2 TRANSISTOR D 1765 720 transistor D 1762 than85 5.5w

    DIODE GP 704

    Abstract: transistor mosfet 536 RD12MVP1 VGS-75 0452 mosfet
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W a (b) RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.


    Original     		PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) DIODE GP 704 transistor mosfet 536 VGS-75 0452 mosfet

    mosfet K 2865

    Abstract: 4814 mosfet BF909WR dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF909WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR


    Original     		PDF BF909WR SCA55 117067/00/02/pp12 mosfet K 2865 4814 mosfet BF909WR dual-gate

    transistor+SMD+12W+MOSFET

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz) transistor+SMD+12W+MOSFET

    transistor D 1666

    Abstract: transistor 801 diagrams
    Text: < Silicon RF Power MOS FET Discrete > RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) OUTLINE DRAWING RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. (b) 7.0+/-0.2 0.2+/-0.05


    Original     		PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz) Oct2011 transistor D 1666 transistor 801 diagrams

    BF992

    Abstract: bf992 application Silicon N-Channel Dual Gate MOS-FET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BF992 Silicon N-channel dual gate MOS-FET Product specification Supersedes data of 1996 Jul 30 1999 Aug 11 Philips Semiconductors Product specification Silicon N-channel dual gate MOS-FET APPLICATIONS BF992 PINNING


    Original     		PDF M3D071 BF992 OT143B 125004/03/pp12 BF992 bf992 application Silicon N-Channel Dual Gate MOS-FET

    BB405

    Abstract: BF998WR 4814 mosfet dual-gate MGC480
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 File under Discrete Semiconductors, SC07 1997 Sep 05 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR


    Original     		PDF BF998WR SCA55 117067/00/02/pp12 BB405 BF998WR 4814 mosfet dual-gate MGC480

    MOSFET mark J7

    Abstract: 78s12 RD12MVS 043mm transistor t06 19
    Text: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) RD12MVS1-101 Oct2011 MOSFET mark J7 78s12 RD12MVS 043mm transistor t06 19

    Untitled

    Abstract: No abstract text available
    Text: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3338-01

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W (a) OUTLINE DRAWING RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. (b) (b) 7.0+/-0.2 0.2+/-0.05


    Original     		PDF RD12MVP1 175MHz, RD12MVP1 175MHz 175MHz)

    BF1203

    Abstract: FET MARKING CODE 8203 dual mosfet
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203


    Original     		PDF MBD128 BF1203 OT363 613512/03/pp20 BF1203 FET MARKING CODE 8203 dual mosfet

    2SK3338-01

    Abstract: L356
    Text: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters


    Original     		PDF 2SK3338-01 2SK3338-01 L356

    9033 transistor

    Abstract: BF1203
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203


    Original     		PDF MBD128 BF1203 OT363 613512/02/pp20 9033 transistor BF1203

    a 1757 transistor

    Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor MOSFET mark J7 GRM40 transistor 1758

    MARKING 5F SOT363

    Abstract: BF1204 FET MARKING CODE km 1667
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Nov 13 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204


    Original     		PDF MBD128 BF1204 OT363 613512/02/pp12 MARKING 5F SOT363 BF1204 FET MARKING CODE km 1667

    a 1757 transistor

    Abstract: 78s12 GRM40 RD12MVS1 T112
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor 78s12 GRM40 T112

    a 1757 transistor

    Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor


    Original     		PDF RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 T112 MOSFET 12W mosfet 4816 mosfet 1208

    Untitled

    Abstract: No abstract text available
    Text: < Silicon RF Power MOS FET Discrete > RD05MMP1 RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W (a) OUTLINE DRAWING (b) (b) 7.0+/-0.2 0.2+/-0.05 RD05MMP1 is a MOS FET type transistor 0.65+/-0.2 DESCRIPTION 8.0+/-0.2 FEATURES (4.5) INDEX MARK


    Original     		PDF RD05MMP1 941MHz, RD05MMP1 941MHz 941MHz)

    BF989

    Abstract: MOSFET 4466 BP317 SCA52 dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF989 N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF989 FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF989 OT143 SCA52 117061/00/02/pp8 BF989 MOSFET 4466 BP317 SCA52 dual-gate

    BF990A

    Abstract: PHILIPS MOSFET MARKING 4814 mosfet dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF990A N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF990A FEATURES DESCRIPTION • Protected against excessive input voltage surges by


    Original     		PDF BF990A OT143 SCA52 117061/00/02/pp8 BF990A PHILIPS MOSFET MARKING 4814 mosfet dual-gate

    CP Clare RELAY

    Abstract: triac control 8-pin Solid State Switches LCC Triac PLA power relay Clare Relay scr 1A fet mos triac catalog triac control 16 pin
    Text: Clare°ofeafeifi] Chart Solid State Switches AC POWER SWITCHES SPECIALTYi pro ducts! 1A, 2A MOS FET 400 .250 7 2 1 3750 YES ULBABT 6 PIN, 8 PIN XCA 1A MOS FET 300 .100 25 5 1 3750 YES UL, BABT 6 PIN, 8 PIN OMA 1A, 2A MOS FET 300 .100 25 10 2 1500 YES UL.BABT


    OCR Scan     		PDF SSP15 CP Clare RELAY triac control 8-pin Solid State Switches LCC Triac PLA power relay Clare Relay scr 1A fet mos triac catalog triac control 16 pin

    MOSFET 4466

    Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
    Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES


    OCR Scan     		PDF BF1102 OT363 BF1102 MOSFET 4466 4466 8 pin mosfet pin voltage 4466 mosfet