kaseikyo
Abstract: No abstract text available
Text: MN101C57 Series MN101C57C Type MN101C57D FLASH 48K ROM byte MN101CF57D Mask ROM Internal ROM type 64K 2K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time QFP100-P-1818B 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)
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MN101C57
MN101C57C
MN101C57D
MN101CF57D
QFP100-P-1818B
KEY10,
KEY11,
KEY12,
KEY13,
KEY14,
kaseikyo
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Untitled
Abstract: No abstract text available
Text: MN101C57C , MN101C57D Type MN101C57C under development MN101C57D (under development) ROM (x× 8-bit) 48 K 64 K RAM (××8-bit) 2K 2K Package QFP100-P-1818B *Pb free (under development), LQFP100-P-1414 *Pb free (under planning) Minimum Instruction Execution Time
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MN101C57C
MN101C57D
QFP100-P-1818B
LQFP100-P-1414
LED4/P54
KEY10/TXDA/SBO0A/PO0
KEY11/RXDA/SBI0A/PO1
NRST/P27
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Untitled
Abstract: No abstract text available
Text: MN101C57C , MN101C57D Type MN101C57C MN101C57D ROM x× 8-bit 48 K 64 K RAM (×× 8-bit) 2K Package 2K QFP100-P-1818B *Lead-free Minimum Instruction Execution Time 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 62.5 µs (at 2.0 V to 5.5 V, 32 kHz)*
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MN101C57C
MN101C57D
MN101C57C
QFP100-P-1818B
LED4/P54
TM8O/LED3/P53
NRST/P27
KEY13/SBO2/PO3
KEY14/SBI2/PO4
NWE/TM0O/LED0/P50
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MN101C57C
Abstract: MN101C57D QFP100-P-1818B
Text: MN101C57C , MN101C57D Type MN101C57C under development MN101C57D (under development) ROM (x× 8-bit) 48 K 64 K RAM (××8-bit) 2K 2K Package QFP100-P-1818B *Pb free (under development), LQFP100-P-1414 *Pb free (under planning) Minimum Instruction Execution Time
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MN101C57C
MN101C57D
QFP100-P-1818B
LQFP100-P-1414
MN101C57C
MN101C57D
QFP100-P-1818B
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MN101C57A
Abstract: MN101C57C QFP100-P-1818B
Text: MN101C57A , MN101C57C Type MN101C57A under planning MN101C57C (under development) ROM (x× 8-bit) 32 K 48 K RAM (×× 8-bit) 1.5 K 2K Package QFP100-P-1818B, LQFP100-P-1414 (under planning) Minimum Instruction Execution Time 0.1 µs (at 4.5 V to 5.5 V, 20 MHz)
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MN101C57A
MN101C57C
QFP100-P-1818B,
LQFP100-P-1414
LED4/A17/P54
LED2/TM2O/NCS/P52
LED0/TM8O/NWE/P50
LED3/A16/P53
MN101C57A
MN101C57C
QFP100-P-1818B
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Untitled
Abstract: No abstract text available
Text: MN101C57C , MN101C57D Type MN101C57C under development MN101C57D (under development) ROM (x× 8-bit) 48 K 64 K RAM (×× 8-bit) 2K 2K Package QFP100-P-1818B *Lead-free (under development), LQFP100-P-1414 *Lead-free (under planning) Minimum Instruction Execution Time
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MN101C57C
MN101C57D
QFP100-P-1818B
LQFP100-P-1414
Timer1/P51
NWE/TM0O/LED0/P50
TM8O/LED3/P53
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digital sphygmomanometer circuit diagram
Abstract: Air COnditioner toyama IV-37 MatsuA kaseikyo book national semiconductor kaseikyo MN101C57D P14A
Text: MICROCOMPUTER MN101C MN101C57C/57D/F57D LSI User’s Manual Pub.No.21457-016E PanaX Series is a trademark of Matsushita Electric Industrial Co., Ltd. The other corporation names, logotype and product names written in this book are trademarks or registered trademarks of their
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MN101C
MN101C57C/57D/F57D
21457-016E
digital sphygmomanometer circuit diagram
Air COnditioner toyama
IV-37
MatsuA kaseikyo
book national semiconductor
kaseikyo
MN101C57D
P14A
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Untitled
Abstract: No abstract text available
Text: MN101C57C , MN101C57D Type MN101C57C MN101C57D ROM x× 8-bit 48 K 64 K RAM (×× 8-bit) 2K Package QFP100-P-1818B *Lead-free, 2K LQFP100-P-1414 *Lead-free (under planning) Minimum Instruction Execution Time 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)
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MN101C57C
MN101C57D
MN101C57C
QFP100-P-1818B
LQFP100-P-1414
MN101C57D
conversioNRST/P27
LED4/P54
KEY12/SBT0A/PO2
KEY13/SBO2/PO3
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Untitled
Abstract: No abstract text available
Text: MN101C57C , MN101C57D Type MN101C57C MN101C57D ROM x× 8-bit 48 K 64 K RAM (×× 8-bit) 2K Package QFP100-P-1818B *Lead-free, 2K LQFP100-P-1414 *Lead-free (under planning) Minimum Instruction Execution Time 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)
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MN101C57C
MN101C57D
MN101C57C
QFP100-P-1818B
LQFP100-P-1414
MN101C57D
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MatsuA kaseikyo
Abstract: kaseikyo MAX3016 MatsuSHITA kaseikyo
Text: MN101C57 Series MN101C57C Type MN101C57D FLASH 48K ROM byte MN101CF57D Mask ROM Internal ROM type 64K 2K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time QFP100-P-1818B 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)
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MN101C57
QFP100-P-1818B
MN101C57C
MN101C57D
MN101CF57D
MatsuA kaseikyo
kaseikyo
MAX3016
MatsuSHITA kaseikyo
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kaseikyo
Abstract: MN101C57D MN101C57C MN101CF57D QFP100-P-1818B SEG22 SEG23 KASEI
Text: MN101C57 Series MN101C57C Type MN101C57D FLASH 48K ROM byte MN101CF57D Mask ROM Internal ROM type 64K 2K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time QFP100-P-1818B 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)
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MN101C57
MN101C57C
MN101C57D
MN101CF57D
QFP100-P-1818B
kaseikyo
MN101C57D
MN101C57C
MN101CF57D
QFP100-P-1818B
SEG22
SEG23
KASEI
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MN101C57C
Abstract: No abstract text available
Text: Vdd 17,19,39,40 11,14,18,49 MN101C57C OSC1 12 1 OSC2 13 FCR4.19MC5 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=30/30pF +/-20% Oscillating circuit for evaluation
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MN101C57C
19MC5
30/30pF
MN101C57C
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Untitled
Abstract: No abstract text available
Text: MN101C57C, MN101C57D MN101C57C Type Minimum Instruction Execution Time FLASH 48K 64K 2K RAM byte Package (Lead-free) MN101CF57D Mask ROM Internal ROM type ROM (byte) MN101C57D QFP100-P-1818B 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)
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MN101C57C,
MN101C57D
QFP100-P-1818B
MN101C57C
MN101C57D
MN101CF57D
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Untitled
Abstract: No abstract text available
Text: MN101C57C , MN101C57D Type MN101C57C under development MN101C57D (under development) ROM (x× 8-bit) 48 K 64 K RAM (×× 8-bit) 2K 2K Package QFP100-P-1818B *Pb free, LQFP100-P-1414 *Pb free (under planning) Minimum Instruction Execution Time 0.1 µs (at 4.5 V to 5.5 V, 20 MHz)
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MN101C57C
MN101C57D
QFP100-P-1818B
LQFP100-P-1414
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Untitled
Abstract: No abstract text available
Text: MN101C57C , MN101C57D Type MN101C57C MN101C57D ROM x× 8-bit 48 K 64 K RAM (×× 8-bit) 2K Package 2K QFP100-P-1818B *Lead-free Minimum Instruction Execution Time 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 62.5 µs (at 2.0 V to 5.5 V, 32 kHz)*
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MN101C57C
MN101C57D
MN101C57C
QFP100-P-1818B
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MN101C57C
Abstract: No abstract text available
Text: Vdd MN101C57C OSC1 12 OSC2 13 Rd:1000 FCR4.0MC5 1 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=30/30pF +/-20% Oscillating circuit for evaluation
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MN101C57C
30/30pF
MN101C57C
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MN101C57C
Abstract: No abstract text available
Text: Vdd 17,19,39,40 11,14,18,49 MN101C57C OSC1 12 1 OSC2 13 CCR20.0MXC7 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=8/8pF +/-2pF Oscillating circuit for evaluation
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MN101C57C
CCR20
MN101C57C
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remote control aeroplane circuit
Abstract: MN101C57C MN101C57D QFP100-P-1818B MAD00019EEM A1788
Text: MN101C57C , MN101C57D Type MN101C57C under development MN101C57D (under development) ROM (x× 8-bit) 48 K 64 K RAM (×× 8-bit) 2K 2K Package QFP100-P-1818B *Lead-free (under development), LQFP100-P-1414 *Lead-free (under planning) Minimum Instruction Execution Time
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MN101C57C
MN101C57D
QFP100-P-1818B
LQFP100-P-1414
remote control aeroplane circuit
MN101C57C
MN101C57D
QFP100-P-1818B
MAD00019EEM
A1788
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kaseikyo
Abstract: No abstract text available
Text: MN101C57 Series MN101C57C Type MN101C57D FLASH 48K ROM byte MN101CF57D Mask ROM Internal ROM type 64K 2K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time QFP100-P-1818B 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)
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MN101C57
QFP100-P-1818B
MN101C57C
MN101C57D
MN101CF57D
Square-wave/19
SEG46,
KEY10,
KEY11,
KEY12,
kaseikyo
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Untitled
Abstract: No abstract text available
Text: MN101C57 Series MN101C57C Type MN101C57D FLASH 48K ROM byte MN101CF57D Mask ROM Internal ROM type 64K 2K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time QFP100-P-1818B 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz)
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MN101C57
QFP100-P-1818B
MN101C57C
MN101C57D
MN101CF57D
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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MN101CF78
Abstract: MN101EF16
Text: AM1 MN101 Series AM1 (MN101) Series The AM1 Series of 8-bit microcomputers is the realization of developments in C programming. Because of the 8-bit architecture, which allows half-byte instruction sets and offers other advantages, assembler ROM code size can be reduced.
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MN101)
16-bit
P33/COM3
NRST/P27
TM7IOB/LED1/P51
TM2IOB/LED2/P52
TM8IOB/LED3/P53
RMOUTB/TM0IOB/LED0/P50
VLC3/P92
MN101CF78
MN101EF16
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MN101EF57G
Abstract: MN101D10X MN103SfC2d MN103SH MN103SFE4K MN103SFE3K MN103SFa5K MN101EF31G MN101 PANASONIC 8-bit microcontrollers mn102
Text: 2009 ver.2 Microcomputer Family AM Series 8-bit AM1 Series 16-bit AM2 Series 32-bit AM3 Series Delivers Improved Performance and Cost Savings Unified Microcomputer Architecture Common architecture shared by 8-, 16-, and 32-bit models The products of a rigorous analysis of embedded device software and system needs, the Panasonic AM1
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16-bit
32-bit
MN101)
MN102)
MN103)
MN101EF57G
MN101D10X
MN103SfC2d
MN103SH
MN103SFE4K
MN103SFE3K
MN103SFa5K
MN101EF31G
MN101 PANASONIC
8-bit microcontrollers mn102
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MN103G57G
Abstract: MN103SF mn101cf95 MN101CF95G MN101CF91D mn103002
Text: ¢ AM1 MN101 8-bit Single-chip Microcomputers Series Specifications Type ADC Built-in Type ADC• DAC Built-in Type Part Number ROM RAM (x 8-bit) (× 8-bit) Package Built-in Built-in I/O Speed Operating Interrupt Timer/ EPROM Flash Pins (µs) voltage(V) sources counters
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MN101)
MN101C273
MN101C425
MN101C427
MN101C457
MN101C539
MN101C309
MN101C30A
MN101C28A
MN101C28C
MN103G57G
MN103SF
mn101cf95
MN101CF95G
MN101CF91D
mn103002
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