TRANSISTOR SMD MARKING CODE w2
Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
Text: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
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JUMPER-0603
Abstract: CGB98-900 INFINEON PART MARKING infineon marking L2 MMIC marking 81 TSSOP10 CGB98 C4 MMIC siemens inductor 15PF-0603
Text: GaAs MMIC CGB 98 Preliminary Datasheet * 3-stage GaAs GSM-HBT Power Amplifier *Operating voltage range: 2.7 to 6.0 V * Single supply voltage * Pout = 34.0dBm at Vcc=3.2V
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/GSM900
CGB98
Q62702G09111
P-TSSOP10-2
JUMPER-0603
CGB98-900
INFINEON PART MARKING
infineon marking L2
MMIC marking 81
TSSOP10
CGB98
C4 MMIC
siemens inductor
15PF-0603
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2060025D
CMP2060025D
CMPA20
CMPA2060025D
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CMPA2060025D
Abstract: No abstract text available
Text: CMPA2060025D 25 W, 2.0 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2060025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium
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CMPA2060025D
CMP2060025D
CMPA20
CMPA2060025D
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PG311
Abstract: No abstract text available
Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm
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CMH192
Q62705-K608
VQFN-20
PG311
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Infineon CMH192 GaAs
Abstract: CMH192 mmic MIXER 210
Text: GaAs MMIC CMH192 Preliminary Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process IF Out • Leadless 3.5 x 3.5 mm. SMT package • LO Input power range: -9.0 to 0 dBm
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CMH192
VQFN-20
CMH192
Infineon CMH192 GaAs
mmic MIXER 210
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mmic c8
Abstract: mmic MIXER 210 CMH192 LNA marking A mmic code marking P 18 mmic marking code P 18 mmic code c8 mmic code c7 H-192 Q62705-K608
Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/M ixer IC for use in US and Korean band CDM A Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SM T package • LO Input power range: -7.0 to 0 dBm
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CMH192
Q62705-K608
VQFN-20
10ability
CMH192
mmic c8
mmic MIXER 210
LNA marking A
mmic code marking P 18
mmic marking code P 18
mmic code c8
mmic code c7
H-192
Q62705-K608
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k608
Abstract: MMIC marking CODE c4 CMH192 GRP1555C7H100JZ01 mmic marking L MMIC CODE c4
Text: GaAs MMIC CMH192 Datasheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • G aAs PHEMT Process IF Out • Leadless 3.5 x 3.5 m m . SMT package • LO Input power range: -7.0 to 0 dBm
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CMH192
Q62705-K608
VQFN-20
k608
MMIC marking CODE c4
CMH192
GRP1555C7H100JZ01
mmic marking L
MMIC CODE c4
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CAP 0402
Abstract: GaAs FET amplifer mmic marking c8 GaAs FET amplifer chip CMH0819 VQFN-24 MMIC marking code 132 MMIC marking code 101 mmic code marking P 18 mmic c8
Text: GaAs MMIC CMH0819 • High-Linearity, Dual-Band LNA/Mixer IC for PCS use in CDMA and TDMA Mobile Phones Filter Ports • Integrated bypass switch for LNAs CDMA • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package LNA • LO Input power range: -7.0 to 0 dBm
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CMH0819
VQFN-24
CMH0819
CAP 0402
GaAs FET amplifer
mmic marking c8
GaAs FET amplifer chip
VQFN-24
MMIC marking code 132
MMIC marking code 101
mmic code marking P 18
mmic c8
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC CGB240B Preliminary Data Sheet • 2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications • ACPR / IP3 tested to be compliant with IEEE802.11b standard • Fully compliant with Bluetooth requirements dual-mode use • Single voltage supply
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CGB240B
IEEE802
CGB240B
BluetooCGB240B
P-TSSOP-10-2
TSSOP10
Version01
J-STD-033
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capacitor 22 pf
Abstract: TriQuint PACKING IEEE802.11b standard 0402CS-1N0X CGB240B J-STD-033 TSSOP10 capacitor 2.2 PF mmic c8 murata x7r
Text: GaAs MMIC CGB240B Preliminary Data Sheet • 2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications • ACPR / IP3 tested to be compliant with IEEE802.11b standard • Fully compliant with Bluetooth requirements dual-mode use • Single voltage supply
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CGB240B
IEEE802
P-TSSOP-10-2
CGB240B
P-TSSOP-10-2
TSSOP10
Version01
capacitor 22 pf
TriQuint PACKING
IEEE802.11b standard
0402CS-1N0X
J-STD-033
capacitor 2.2 PF
mmic c8
murata x7r
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CMPA5585025D
Abstract: vd2b
Text: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMP5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
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CMPA5585025D
CMP5585025D
CMPA5585025D
vd2b
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Untitled
Abstract: No abstract text available
Text: CMY191 GaAs MMIC Preliminary Datasheet • • • • • • • • Ultralinear Mixer with integrated high IP3i LNA and LO-Buffer for PCS CDMA receiver applications.
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CMY191
24dBm.
96GHz;
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CMH82
Abstract: MMIC code -03
Text: GaAs MMIC CMH82 Preliminary Datasheet • High-Linearity, Cellular LNA/Mixer IC for use in TDMA and CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process CDMA • Leadless 3.5 x 3.5 mm. SMT package • LO Input power range: -12.0 to 0 dBm
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CMH82
VQFN-20
CMH82
MMIC code -03
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MICROWAVE ASSOCIATES RF SPDT switch
Abstract: MIL-STD-1686 442F SP8T switch package ghz HMC189MS8 HMC222C12 HMC226 HMC241QS16 HMC252QS24 HMC236QS16G
Text: OFF-THE-SHELF HITTITE MICROWAVE CORPORATION NOVEMBER 1999 Positive Bias Multithrow Switches with Integrated TTL Decoders, DC to 3.5 GHz INSIDE. *9 NEW PRODUCTS RELEASED! Featured on the cover of the Microwave Journal September 1999 , Hittite Microwave introduces the first series of positive
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CMPA5585025D
Abstract: No abstract text available
Text: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
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CMPA5585025D
CMPA5585025D
38rolina,
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CMPA801B025D
Abstract: No abstract text available
Text: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
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CMPA801B025D
CMP801B025D
CMPA801B025D
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Untitled
Abstract: No abstract text available
Text: CMPA5585025D 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMP5585025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
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CMPA5585025D
CMP5585025D
CMPA5585025D
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murata COG capacitor
Abstract: 0402CS-1N0X CGB240B J-STD-033 TSSOP10
Text: GaAs MMIC CGB240B Datasheet • 2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications • ACPR / IP3 tested to be compliant with IEEE802.11b standard • Fully compliant with Bluetooth requirements dual-mode use • Single voltage supply
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CGB240B
IEEE802
P-TSSOP-10-2
CGB240B
murata COG capacitor
0402CS-1N0X
J-STD-033
TSSOP10
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CMPA801B025D
Abstract: No abstract text available
Text: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
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CMPA801B025D
CMP801B025D
CMPA801B025D
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Untitled
Abstract: No abstract text available
Text: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
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CMPA801B025D
CMP801B025D
CMPA801B025D
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Untitled
Abstract: No abstract text available
Text: CMPA2735075D 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
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CMPA2735075D
CMPA2735075D
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Untitled
Abstract: No abstract text available
Text: CMPA2735075D 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher
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CMPA2735075D
CMPA2735075D
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mmic e3
Abstract: 4350B BLM6G22-30 BLM6G22-30G HSOP16
Text: BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 01 — 3 March 2008 Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount SOT822-1 or flat lead
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BLM6G22-30;
BLM6G22-30G
OT822-1)
OT834-1)
BLM6G22-30
BLM6G22-30G
mmic e3
4350B
HSOP16
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