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    MMC VERSION 4.2 Search Results

    MMC VERSION 4.2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10067847-601RLF Amphenol Communications Solutions SD/MMC Visit Amphenol Communications Solutions
    10067847-511RLF Amphenol Communications Solutions SD/MMC Visit Amphenol Communications Solutions
    10067847-201RLF Amphenol Communications Solutions SD/MMC Visit Amphenol Communications Solutions
    ADC1410S065F1-DB Renesas Electronics Corporation ADC1410S065F1 Demo Board; CMOS version Visit Renesas Electronics Corporation
    ADC1210S065F1-DB Renesas Electronics Corporation ADC1210S065F1 Demo Board; CMOS version Visit Renesas Electronics Corporation

    MMC VERSION 4.2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mmc_write

    Abstract: onenand xsr SAMSUNG NAND FTL KFAT XSR Porting Guide SAMSUNG NAND FLASH TRANSLATION LAYER samsung xsr abstract fore system m.a hindi K9K2G16U0M
    Text: TFS4 Porting Guide 2007.08.16 , Version 1.4.2 Note TFS4 is independent of XSR. Here we assume that XSR or MMC or HSMMC host device driver is already ported to your target system. This TFS4 porting guide covers only TFS4 porting procedure, neither XSR nor MMC(or HSMMC) host device driver.


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    samsung tfs4

    Abstract: samsung xsr Flash Translation Layer XSR Extended Sector Remapper XSR Porting Guide onenand xsr FAT32 NAND XSR SAMSUNG NAND FLASH TRANSLATION LAYER S3C2410
    Text: TFS4 v1.5.0 Porting Guide 2006.05.02 , Version 1.5.0 Note TFS4 is independent of XSR. Here we assume that XSR or MMC or HSMMC host device driver is already ported to your target system. This TFS4 porting guide covers only TFS4 porting procedure, neither XSR nor MMC (or HSMMC) host device driver.


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    samsung xsr

    Abstract: FAT32 SAMSUNG NAND FTL XSR Porting Guide onenand xsr samsung tfs4 Nucleus RTOS 0x00000025 samsung sector remapper SAMSUNG NAND FLASH TRANSLATION LAYER
    Text: TFS4 v1.6 Porting Guide 2006.05.29, Version 1.6 Note TFS4 is independent of XSR. Here we assume that XSR or MMC or HSMMC host device driver is already ported to your target system. This TFS4 porting guide covers only TFS4 porting procedure, neither XSR nor MMC (or HSMMC) host device driver.


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    PDF agreement1250 samsung xsr FAT32 SAMSUNG NAND FTL XSR Porting Guide onenand xsr samsung tfs4 Nucleus RTOS 0x00000025 samsung sector remapper SAMSUNG NAND FLASH TRANSLATION LAYER

    48-PIN

    Abstract: FR30 GIO10 W86L488 W86L488AY W86L488Y ase qfn 48
    Text: W86L488 Winbond Host Interface SD/SDIO/MMC Memory Card Bridge Preliminary W86L488 W86L488 Data Sheet Revision History Pages Version on Web Dates Version 1 08/2002 0.50 First published. 2 12/2002 0.60 Add QFN package. Main Contents 1.Modify pin function of CLK, ACLK,


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    PDF W86L488 W86L488 48-QFN 48-PIN FR30 GIO10 W86L488AY W86L488Y ase qfn 48

    K9F1G08U0A

    Abstract: SAMSUNG 413 K9F1G08U0M SAMSUNG 413 K9K1G08U0A 48-LQFN 2936A K9F5608U0C Flash Memory mmc "Flash Memory select" CSDN cdi schematics
    Text: W86L157 WINBOND MMC CARD CONTROLLER -I- Publication Release Date: December 2, 2004 Revision 0.7 W86L157 Preliminary Revision History VERSION ON WEB PAGES DATES VERSION 1 - 2/2004 0.5 First published. 2 16 4/6/2004 0.6 Add 48-pin LQFN package 3 18, 19 12/2/2004


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    PDF W86L157 W86L157 48-pin produ480, K9F1G08U0A SAMSUNG 413 K9F1G08U0M SAMSUNG 413 K9K1G08U0A 48-LQFN 2936A K9F5608U0C Flash Memory mmc "Flash Memory select" CSDN cdi schematics

    "MMC CARD COMMANDS"

    Abstract: 48-PIN FR30 GIO10 W86L488 W86L488AY W86L488Y MMC Electronics America CSD1146
    Text: Winbond Host Interface SD/SDIO/MMC Memory Card Bridge W86L488 Preliminary W86L488 W86L488 Data Sheet Revision History Pages Version on Web Dates Version 1 Aug. 2002 0.50 First published. 2 Dec. 2002 0.60 Add QFN package. 3 P6, P8, P10, P11, P24, P25, P26, P41, P42,


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    PDF W86L488 W86L488 "MMC CARD COMMANDS" 48-PIN FR30 GIO10 W86L488AY W86L488Y MMC Electronics America CSD1146

    iCreate Technologies

    Abstract: icreate
    Text: i5141-TG i5141-TG SD/MMC Memory Card Controller Datasheet Version 1.1 iCreate Technologies Corporation 2006/9/28 2006 iCreate Technologies Corporation Page 1 / 20 iCreate Technologies Corporation reserves the right to change the specification in any manner without notice.


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    PDF i5141-TG i5141-TG iCreate Technologies icreate

    DIM800DCM12-A000

    Abstract: 4E26
    Text: DIM800DCM12-A000 DIM800DCM12-A000 IGBT Chopper Module Replaces July 2002 version DS5548-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5548- KEY PARAMETERS


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    PDF DIM800DCM12-A000 DS5548-2 DS5548- DIM800DCM12-A000 4E26

    DIM800DCM12-A000

    Abstract: No abstract text available
    Text: DIM800DCM12-A000 DIM800DCM12-A000 IGBT Chopper Module Replaces July 2002 version DS5548-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5548- KEY PARAMETERS


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    PDF DIM800DCM12-A000 DS5548-2 DS5548- DIM800DCM12-A000

    DIM400DDM12-A000

    Abstract: No abstract text available
    Text: DIM400DDM12-A000 DIM400DDM12-A000 Dual Switch IGBT Module Preliminary Information Replaces issue May 2002, version DS5532-1.3 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


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    PDF DIM400DDM12-A000 DS5532-1 DS5532-2 DIM400DDM12-A000

    DIM1600FSM12-A000

    Abstract: No abstract text available
    Text: DIM1600FSM12-A000 DIM1600FSM12-A000 Single Switch IGBT Module Preliminary Information Replaces issue May 2002, version DS5533-1.2 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


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    PDF DIM1600FSM12-A000 DS5533-1 DS5533-2 DIM1600FSM12-A000

    DIM2400ESM12-A000

    Abstract: No abstract text available
    Text: DIM2400ESM12-A000 DIM2400ESM12-A000 Single Switch IGBT Module Preliminary Information Replaces issue May 2002, version DS5536-1.3 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


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    PDF DIM2400ESM12-A000 DS5536-1 DS5529-2 DIM2400ESM12-A000

    DIM1800ESM12-A000

    Abstract: No abstract text available
    Text: DIM1800ESM12-A000 DIM1800ESM12-A000 Single Switch IGBT Module Preliminary Information Replaces issue April 2002, version DS5529-1.3 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


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    PDF DIM1800ESM12-A000 DS5529-1 DS5529-2 DIM1800ESM12-A000

    DIM800FSM12-A000

    Abstract: No abstract text available
    Text: DIM800FSM12-A000 DIM800FSM12-A000 Single Switch IGBT Module Preliminary Information Replaces issue March 2002, version DS5531-1.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


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    PDF DIM800FSM12-A000 DS5531-1 DS5531-2 DIM800FSM12-A000

    DIM800DDM12-A000

    Abstract: No abstract text available
    Text: DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Preliminary Information Replaces issue March 2002, version DS5528-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


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    PDF DIM800DDM12-A000 DS5528-1 DS5528-2 DIM800DDM12-A000

    Untitled

    Abstract: No abstract text available
    Text: DIM1200FSM12-A000 DIM1200FSM12-A000 Single Switch IGBT Module Preliminary Information Replaces issue May 2002, version DS5547-1.3 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


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    PDF DIM1200FSM12-A000 DS5547-1 DS5547-2 1050g

    DIM2400ESM12-A000

    Abstract: No abstract text available
    Text: DIM2400ESM12-A000 DIM2400ESM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5536-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5529-3.0 March 2003


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    PDF DIM2400ESM12-A000 DS5536-2 DS5529-3 33arantee DIM2400ESM12-A000

    DIM1600FSM12-A000

    Abstract: 6x transistor
    Text: DIM1600FSM12-A000 DIM1600FSM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5533-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5533-3.0 March 2003


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    PDF DIM1600FSM12-A000 DS5533-2 DS5533-3 DIM1600FSM12-A000 6x transistor

    DIM1200FSM17-A000

    Abstract: No abstract text available
    Text: DIM1200FSM17-A000 DIM1200FSM17-A000 Single Switch IGBT Module Replaces May 2002, version DS5456-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5456-3.1 July 2002


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    PDF DIM1200FSM17-A000 DS5456-2 DS5456-3 3300Varantee DIM1200FSM17-A000

    bi-directional switches IGBT

    Abstract: DIM400PBM17-A000 bidirectional switch igbt matrix converter
    Text: DIM400PBM17-A000 DIM400PBM17-A000 IGBT Bi-Directional Switch Module Preliminary Information Replaces issue June 2002, version DS5524-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates


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    PDF DIM400PBM17-A000 DS5524-2 bi-directional switches IGBT DIM400PBM17-A000 bidirectional switch igbt matrix converter

    DIM1800ESM12-A000

    Abstract: No abstract text available
    Text: DIM1800ESM12-A000 DIM1800ESM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5529-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5529-3.0 March 2003


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    PDF DIM1800ESM12-A000 DS5529-2 DS5529-3 33arantee DIM1800ESM12-A000

    DIM1800ESM12-A000

    Abstract: LM 949 DS5529-2
    Text: DIM1800ESM12-A000 DIM1800ESM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5529-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5529-3.0 March 2003


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    PDF DIM1800ESM12-A000 DS5529-2 DS5529-3 33arantee DIM1800ESM12-A000 LM 949

    DIM800DDM17-A000

    Abstract: No abstract text available
    Text: DIM800DDM17-A000 DIM800DDM17-A000 Dual Switch IGBT Module Replaces March 2002, version DS5433-3.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5433-4.1 July 2002


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    PDF DIM800DDM17-A000 DS5433-3 DS5433-4 240arantee DIM800DDM17-A000

    Untitled

    Abstract: No abstract text available
    Text: DIM800DCM12-A000 DIM800DCM12-A000 IGBT Chopper Module Replaces issue May 2002 version DS5548-1.2 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5548-2.0 July 2002


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    PDF DIM800DCM12-A000 DS5548-1 DS5548-2 DIM800DCM12-A000