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Comchip Technology Corporation Ltd MMBT5551-G RF Bipolar Transistors VCEO=160V IC=600mA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MMBT5551-G		2,927			1 $0.39 10 $0.267 100 $0.169 1000 $0.076 10000 $0.05	Buy Now
NAC	MMBT5551-G				3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

MMBT5551G Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MMBT5551-G1		Zowie Technology	High Voltage Transistor NPN silicon		Original	PDF

MMBT5551G Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MMBT5551L Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain Lead-free: MMBT5551L Halogen-free: MMBT5551G ORDERING INFORMATION Normal MMBT5551-x-AE3-R	Original	MMBT5551 MMBT5551L MMBT5551G MMBT5551-x-AE3-R MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010 MMBT5551L	PDF
Untitled Abstract: No abstract text available Text: Zowie Technology Corporation High Voltage Transistors Lead free product Halogen-free type FEATURE ƽ We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 3 MMBT5550GH MMBT5551GH 1 1 BASE 2 2 SOT-23 EMITTER MAXIMUM RATINGS	Original	MMBT5550GH MMBT5551GH OT-23	PDF
MMBT5551 Abstract: MMBT5551L Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain Lead-free: MMBT5551L Halogen-free: MMBT5551G ORDERING INFORMATION Normal MMBT5551-x-AE3-R	Original	MMBT5551 MMBT5551L MMBT5551G MMBT5551-x-AE3-R MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010 MMBT5551 MMBT5551L	PDF
1N914 Abstract: mmbt5550 MMBT5551-G MMBT5550-G Text: Zowie Technology Corporation High Voltage Transistors Lead free product FEATURE ƽ We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 3 MMBT5550G MMBT5551G 1 1 BASE 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value	Original	MMBT5550G MMBT5551G OT-23 1N914 mmbt5550 MMBT5551-G MMBT5550-G	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.	Original	MMBT5551 MMBT5551 MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010.	PDF
Untitled Abstract: No abstract text available Text: General Purpose Transistor MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20)	Original	MMBT5401-G OT-23 MMBT5551-G) QW-BTR18	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.	Original	MMBT5551 MMBT5551 MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 MMBT5551-x-AE3-R QW-R206-010	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.	Original	MMBT5551 MMBT5551 OT-23 O-236) MMBT5551G-x-AE3-R QW-R206-010.	PDF
2L smd transistor Abstract: 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l Text: COMCHIP General Purpose Transistor SMD Diodes Specialist MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80)	Original	MMBT5401-G OT-23 MMBT5551-G) QW-BTR18 2L smd transistor 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l	PDF
MMBT5401-G Abstract: No abstract text available Text: General Purpose Transistor MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20)	Original	MMBT5401-G OT-23 MMBT5551-G) QW-BTR18 MMBT5401-G	PDF