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    onsemi MJD112T4G

    TRANS NPN DARL 100V 2A DPAK
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    DigiKey MJD112T4G Digi-Reel 139,553 1
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    MJD112T4G Cut Tape 139,553 1
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    MJD112T4G Reel 137,500 2,500
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    Avnet Americas MJD112T4G Reel 25,000 10 Weeks 2,500
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    MJD112T4G Ammo Pack 1
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    Mouser Electronics MJD112T4G 16,383
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    Arrow Electronics MJD112T4G 90,000 10 Weeks 2,500
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    MJD112T4G 7,500 10 Weeks 2,500
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    Newark MJD112T4G Cut Tape 15,000 1
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    Onlinecomponents.com MJD112T4G 2,500
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    Bristol Electronics MJD112T4G 185
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    ComSIT USA MJD112T4G 4,852
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    Avnet Asia MJD112T4G 10 Weeks 5,000
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    Avnet Silica MJD112T4G 2,500 11 Weeks 2,500
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    EBV Elektronik MJD112T4G 2,500 12 Weeks 2,500
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    Master Electronics MJD112T4G 2,500
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    New Advantage Corporation MJD112T4G 692,500 1
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    Win Source Electronics MJD112T4G 30,100
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    Micro Commercial Components MJD122-TP

    TRANS NPN DARL 100V 8A DPAK
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    DigiKey MJD122-TP Cut Tape 31,790 1
    • 1 $1.25
    • 10 $0.788
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    • 1000 $0.36705
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    MJD122-TP Digi-Reel 31,790 1
    • 1 $1.25
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    • 1000 $0.36705
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    MJD122-TP Reel 30,000 2,500
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    STMicroelectronics MJD122T4

    TRANS NPN DARL 100V 8A DPAK
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    DigiKey MJD122T4 Digi-Reel 7,428 1
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    MJD122T4 Cut Tape 7,428 1
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    MJD122T4 Reel 5,000 2,500
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    Avnet Americas MJD122T4 Reel 2,500 14 Weeks 2,500
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    Mouser Electronics MJD122T4 11,364
    • 1 $1.14
    • 10 $0.728
    • 100 $0.487
    • 1000 $0.347
    • 10000 $0.265
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    Verical MJD122T4 177,500 2,500
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    MJD122T4 10,000 2,500
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    Arrow Electronics MJD122T4 177,500 14 Weeks 2,500
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    MJD122T4 10,000 14 Weeks 2,500
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    MJD122T4 784 14 Weeks 1
    • 1 $1.005
    • 10 $0.6683
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    STMicroelectronics MJD122T4 11,364 1
    • 1 $1.12
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    Bristol Electronics MJD122T4 7,395 9
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    MJD122T4 2,500
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    Ameya Holding Limited MJD122T4 5,628
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    ComSIT USA MJD122T4 7,225
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    Avnet Silica MJD122T4 107,500 15 Weeks 2,500
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    Component Electronics, Inc MJD122T4 26
    • 1 $1.54
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    EBV Elektronik MJD122T4 22,500 15 Weeks 2,500
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    Win Source Electronics MJD122T4 75,000
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    Central Semiconductor Corp CMJD1000-TR

    100V,1.1MA SURFACE MOUNT DIODE-C
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CMJD1000-TR Digi-Reel 2,965 1
    • 1 $5.26
    • 10 $3.685
    • 100 $5.26
    • 1000 $2.4375
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    CMJD1000-TR Cut Tape 2,965 1
    • 1 $5.26
    • 10 $3.685
    • 100 $5.26
    • 1000 $2.4375
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    STMicroelectronics MJD127T4

    TRANS PNP DARL 100V 8A DPAK
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    DigiKey MJD127T4 Reel 2,500 2,500
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    Avnet Americas MJD127T4 Reel 77,500 14 Weeks 2,500
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    Mouser Electronics MJD127T4 6,787
    • 1 $0.99
    • 10 $0.696
    • 100 $0.471
    • 1000 $0.337
    • 10000 $0.249
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    Verical MJD127T4 432,500 2,500
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    Arrow Electronics MJD127T4 432,500 14 Weeks 2,500
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    MJD127T4 15,000 14 Weeks 2,500
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    Newark MJD127T4 Bulk 20,770 1
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    STMicroelectronics MJD127T4 6,787 1
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    Bristol Electronics MJD127T4 248
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    TME MJD127T4 2,601 1
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    • 10 $0.59
    • 100 $0.413
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    ComSIT USA MJD127T4 655
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    Avnet Silica MJD127T4 165,000 15 Weeks 2,500
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    EBV Elektronik MJD127T4 25,000 15 Weeks 2,500
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    Win Source Electronics MJD127T4 75,000
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    MJD1 Datasheets (187)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MJD112 Fairchild Semiconductor NPN Silicon Darlington Transistor Original PDF
    MJD112 Fairchild Semiconductor NPN Silicon Darlington Transistor Original PDF
    MJD112 Korea Electronics TRANS DARLINGTON NPN 100V 2A 3DPACK Original PDF
    MJD112 Motorola SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Original PDF
    MJD112 On Semiconductor Complementary Darlington Power Transistors Original PDF
    MJD112 On Semiconductor Complementary Darlington Power Transistors Original PDF
    MJD112 On Semiconductor MJD112 - TRANSISTOR 2 A, 100 V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369C-01, DPAK-3, BIP General Purpose Power Original PDF
    MJD112 STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Original PDF
    MJD112 STMicroelectronics COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR Original PDF
    MJD112 Korea Electronics Darlington Transistor Scan PDF
    MJD112 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    MJD112 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MJD112 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar Power, NPN, 2A, 100V, Pkg Style DPAK Scan PDF
    MJD112-001 On Semiconductor Power 2A 100V Darlington NPN Original PDF
    MJD112-001 On Semiconductor MJD112 - TRANSISTOR 2 A, 100 V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369D-01, DPAK-3, BIP General Purpose Power Original PDF
    MJD112-001G On Semiconductor TRANS DARLINGTON NPN 100V 2A 3DPAK(Case 369D) RAIL Original PDF
    MJD112-001G On Semiconductor MJD112 - TRANSISTOR 2 A, 100 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, CASE 369D-01, DPAK-3, BIP General Purpose Power Original PDF
    MJD1121 Motorola SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Original PDF
    MJD112-1 On Semiconductor Complementary Darlington Power Transistors Original PDF
    MJD112-1 On Semiconductor MJD112 - TRANSISTOR 2 A, 100 V, NPN, Si, POWER TRANSISTOR, CASE 369-07, 3 PIN, BIP General Purpose Power Original PDF
    ...

    MJD1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJD122

    Abstract: TIP125-TIP127 mjd122g
    Text: MJD122, MJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES


    Original
    PDF MJD122, NJVMJD122T4G MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD122 mjd122g

    MJD122

    Abstract: TIP122
    Text: MJD122 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER Features: 1 2 3 D-PAK(TO-252) * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating


    Original
    PDF MJD122 O-252) TIP122 13-Apr-07 O-252 MJD122 TIP122

    MJD122T4G

    Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
    Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves


    Original
    PDF MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD122T4G 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127

    02D2G

    Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
    Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot


    Original
    PDF MJD18002D2 MJD18002D2 MJD18002D2/D 02D2G MJD18002D2T4G 18002d2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MJD122 Features • Silicon NPN epitaxial planer Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original
    PDF MJD122

    1N5825

    Abstract: 369D MJD112 MJD112G MJD117 MSD6100 TIP31 TIP32 MJD117-1G
    Text: MJD112 NPN MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,


    Original
    PDF MJD112 MJD117 TIP31 TIP32 MJD112/D 1N5825 369D MJD112 MJD112G MJD117 MSD6100 MJD117-1G

    Untitled

    Abstract: No abstract text available
    Text: MJD117 MJD117 D-PACK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I. PACK, “ - I “ Suffix) Electrically Similar to Popular TIP117


    Original
    PDF MJD117 TIP117

    1N5825

    Abstract: MJD112 MJD117 MSD6100 TIP110 TIP117 MJD112-D TIP110-TIP117
    Text: ON Semiconductort NPN MJD112* Complementary Darlington Power Transistors PNP MJD117* DPAK For Surface Mount Applications *ON Semiconductor Preferred Device Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters,


    Original
    PDF MJD112* MJD117* TIP110 TIP117 r14525 MJD112/D 1N5825 MJD112 MJD117 MSD6100 MJD112-D TIP110-TIP117

    Untitled

    Abstract: No abstract text available
    Text: MJD127 MJD127 D-PAK for Surface Mount Applications • • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP127


    Original
    PDF MJD127 TIP127 MJD122 MJD122 MJD127TF O-252

    Untitled

    Abstract: No abstract text available
    Text: MJD117 MJD117 D-PAK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP117


    Original
    PDF MJD117 TIP117 TIP117 MJD117TF O-252

    MJD1222

    Abstract: mjd907
    Text: MJD907 MJD907 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in a Damper Diode at E-C Darlington TR Complement to MJD1222 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Silicon Darlington Transistor


    Original
    PDF MJD907 MJD1222 MJD1222 mjd907

    J148G

    Abstract: j148 NPN Silicon Power Transistor DPAK MJD148 MJD148T4 MJD148T4G MS10 marking code QV transistor
    Text: MJD148 NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com POWER TRANSISTOR 4.0 AMPERES 45 VOLTS, 20 WATTS Features • High Gain − 50 Min @ IC = 2.0 A


    Original
    PDF MJD148 MJD148/D J148G j148 NPN Silicon Power Transistor DPAK MJD148 MJD148T4 MJD148T4G MS10 marking code QV transistor

    D112

    Abstract: MJD112 D-PAK package
    Text: SEMICONDUCTOR MJD112 MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K D112 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name D112 MJD112 3 hFE Grade 4 Lot No. 99.12.16 Revision No : Year 0 ~ 9 : 2000~2009


    Original
    PDF MJD112 D112 MJD112 D-PAK package

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MJD112 Features • Silicon NPN epitaxial planer Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original
    PDF MJD112

    MJD112

    Abstract: DIODE T4 symbol NPN Silicon Power Transistor DPAK MJD117 TIP112 TIP117
    Text: MJD112 MJD117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL


    Original
    PDF MJD112 MJD117 O-252 TIP112 TIP117 MJD112 MJD117 DIODE T4 symbol NPN Silicon Power Transistor DPAK TIP117

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2L TRANSISTOR(NPN) FEATURES 1.BASE ∙ High DC current gain ∙ Electrically similar to popular TIP122 ∙ Built-in a damper diode at E-C


    Original
    PDF O-251/TO-252-2L MJD122 O-251 O-252-2L TIP122

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 MJD127 Plastic-Encapsulate Transistors TO-252 TRANSISTOR PNP FEATURES 1. BASE High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original
    PDF O-252 MJD127 TIP127 -100V -16mA -80mA

    morocco tip122

    Abstract: TIP127 Application Note TO252 MJD122 MJD127 TIP122 TIP127 st morocco tip122
    Text: MJD122 MJD127  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ STMicroelectronics PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL


    Original
    PDF MJD122 MJD127 O-252 TIP122 TIP127 MJD122 MJD127 morocco tip122 TIP127 Application Note TO252 TIP127 st morocco tip122

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MJD112/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A FEATURES I C J D High DC Current Gain. Low Collector-Emitter Saturation Voltage. K Q Straight Lead IPAK, "L" Suffix


    Original
    PDF MJD112/L MJD117/L.

    j148g

    Abstract: No abstract text available
    Text: MJD148, MJD148T4G NPN Silicon Power Transistor DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • • • • • • High Gain Low Saturation Voltage High Current Gain − Bandwidth Product


    Original
    PDF MJD148, NJVMJD148T4G AEC-Q101 MJD148/D j148g

    MJD127T4G

    Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
    Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS


    Original
    PDF MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122/D MJD127T4G 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127

    TRANSISTOR tip122

    Abstract: QS 100 NPN Transistor MJD122 MJD127 TIP122 darlington transistor NPN tip122 npn
    Text: MJD122 NPN Silicon Darlington Transistor Features • • • • • • Equivalent Circuit D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications Electrically Similar to Popular TIP122


    Original
    PDF MJD122 TIP122 MJD127 TRANSISTOR tip122 QS 100 NPN Transistor MJD122 MJD127 TIP122 darlington transistor NPN tip122 npn

    Untitled

    Abstract: No abstract text available
    Text: MJD122 NPN TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original
    PDF MJD122 O-251/TO-525-2L O-251 TIP122 O-252-2L

    TS 4142

    Abstract: W1000 MJD127 TIP127
    Text: SAMSUNG ELECTRONICS INC MJD127 M2E D Bi 7=31,4142 000=1021, Ö Œ S M G K PNP SILICON DARLINGTON TRANSÌSTOR "T'33> -3' D-PACK FOR SURFACE MOUNT APPLICATIONS • • • • • H ig h D C Current G ain Built-in a D am p e r D io d e at E-C L e ad F o rm e d tor S u rfa c e M o u n t A p p lic a tio n s N o Suffix


    OCR Scan
    PDF MJD127 TIP127 -30VE le-250 TS 4142 W1000 TIP127