1N21B diode
Abstract: 1N21B general purpose of SILICON diode with 2 A
Text: 1N21B General Purpose UHF/MW Mixer Diode 18.50 Diodes UHF/Microwave Mixer D. Page 1 of 1 Enter Your Part # Home Part Number: 1N21B Online Store 1N21B Diodes General Purpose UH F/MW Mixer Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits
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1N21B
1N21B
com/1n21b
1N21B diode
general purpose of SILICON diode with 2 A
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1N25 diode
Abstract: GENERAL PURPOSE UHF MW MIXER DIODE 1N25
Text: 1N25 General Purpose UHF/MW Mixer Diode 69.00 Diodes UHF/Microwave Mixer Dio. Page 1 of 1 Enter Your Part # Home Part Number: 1N25 Online Store 1N25 Diodes General Purpose UH F/MW Mixer Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits
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DO-22
com/1n25
1N25 diode
GENERAL PURPOSE UHF MW MIXER DIODE
1N25
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1N416E
Abstract: DO-23
Text: 1N416E General Purpose UHF/MW Mixer Diode 98.98 Diodes UHF/Microwave Mixer . Page 1 of 1 Enter Your Part # Home Part Number: 1N416E Online Store 1N416E Diodes General Purpose UH F/MW Mixer Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits
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1N416E
1N416E
DO-23
com/1n416e
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DH324
Abstract: DH312
Text: SILICON SCHOTTKY DIODES Silicon Schottky barrier mixer diodes SILICON SCHOTTKY BARRIER MIXER DIODES Description Silicon Schottky barrier mixer diodes are available in the following configurations: • packaged • chip Low barrier diodes are required for applications where the Local Oscillator LO drive level is between
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Untitled
Abstract: No abstract text available
Text: SILICON SCHOTTKY DIODES Silicon Schottky barrier mixer diodes SILICON SCHOTTKY BARRIER MIXER DIODES Description Silicon Schottky barrier mixer diodes are available in the following configurations: • packaged • chip Low barrier diodes are required for applications where the Local Oscillator LO drive level is between
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sampling mixer
Abstract: passive Radar block diagram Ku-band Step Recovery Multipliers Wideband Mixer upconverting and downconverting miteq preamplifiers
Text: MIXER SUBSYSTEMS Questions and Answers about. MIXER SUBSYSTEMS Q1: How does the Special Mixer Product Department define a mixer subsystem? A1: Generally, the subsystem consists of one or more unique core mixer products from catalog sections 1 through 4, with added input or output components such as amplifiers, filters, etc. or simply phase and amplitude matched
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ARS0506L
sampling mixer
passive Radar block diagram
Ku-band Step Recovery Multipliers
Wideband Mixer upconverting and downconverting
miteq preamplifiers
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DH324
Abstract: DH312 DH314 DH313 DH315 DH301 DH303
Text: SILICON SCHOTTKY DIODES Silicon Schottky barrier mixer diodes SILICON SCHOTTKY BARRIER MIXER DIODES Description Silicon Schottky barrier mixer diodes are available in the following configurations: • packaged • chip Low barrier diodes are required for applications where the Local Oscillator LO drive level is between
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DH324
DH325
DH312
DH314
DH313
DH315
DH301
DH303
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CHM2378
Abstract: low power dc mixer mmic am
Text: CHM2378 W-band Dual Channel Mixer GaAs Monolithic Microwave IC Description RF1 The CHM2378 is a dual channel mixer. Each mixer cell is a balanced structure based on a six quarter wave ring. The nonlinear devices are high quality Schottky diodes providing low conversion loss and
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CHM2378
CHM2378
100MHz
DSCHM23781074
-15-Mar
low power dc mixer
mmic am
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Untitled
Abstract: No abstract text available
Text: CHM2179b RoHS COMPLIANT W-band Mixer GaAs Monolithic Microwave IC Description The CHM2179b is a single channel mixer. The structure is a balanced mixer based on a six-quarter wave ring. The non-linear devices are high quality Schottky diodes providing low conversion loss and very low
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CHM2179b
CHM2179b
100MHz
DSCHM2179b6013
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CHM2378
Abstract: dual diode mixer
Text: CHM2378a W-band Dual Channel Mixer GaAs Monolithic Microwave IC Description RF1 The CHM2378 is a dual channel mixer. Each mixer cell is a balanced structure based on a six quarter wave ring. The nonlinear devices are high quality Schottky diodes providing low conversion loss and
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CHM2378a
CHM2378
100MHz
DSCHM23781269
-26-Sep
dual diode mixer
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RO3003
Abstract: W-band W1330 CHM2179b98F low power dc mixer
Text: CHM2179b RoHS COMPLIANT W-band Mixer GaAs Monolithic Microwave IC Description The CHM2179b is a single channel mixer. The structure is a balanced mixer based on a six-quarter wave ring. The non-linear devices are high quality Schottky diodes providing low conversion loss and very low
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CHM2179b
CHM2179b
100MHz
DSCHM2179b6013
RO3003
W-band
W1330
CHM2179b98F
low power dc mixer
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RO3003
Abstract: CHM2179B w-band DSCHM2179b6013 W-band diode
Text: CHM2179b RoHS COMPLIANT W-band Mixer GaAs Monolithic Microwave IC Description The CHM2179b is a single channel mixer. The structure is a balanced mixer based on a six-quarter wave ring. The non-linear devices are high quality Schottky diodes providing low conversion loss and very low
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CHM2179b
CHM2179b
100MHz
DSCHM2179b6013
RO3003
w-band
W-band diode
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RO3003
Abstract: W-band
Text: CHM2179b RoHS COMPLIANT W-band Mixer GaAs Monolithic Microwave IC Description The CHM2179b is a single channel mixer. The structure is a balanced mixer based on a six-quarter wave ring. The non-linear devices are high quality Schottky diodes providing low conversion loss and very low
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CHM2179b
CHM2179b
100MHz
DSCHM2179b6013
RO3003
W-band
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Untitled
Abstract: No abstract text available
Text: CHM2378a RoHS COMPLIANT W-band Dual Channel Mixer GaAs Monolithic Microwave IC Description RF1 The CHM2378a is a dual channel mixer. Each mixer cell is a balanced structure based on a six quarter wave ring. The nonlinear devices are high quality Schottky diodes providing low conversion loss and
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CHM2378a
CHM2378a
100MHz
DSCHM2378a6354
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JAN1N23WG
Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A
Text: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED
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Silicon Point Contact Mixer Diodes
Abstract: Mixer Silicon Detector
Text: Section 4 Receiving Diodes GaAs Schottky Barrier Mixer D io d e s . 4-2 GaAs Beamless Mixer Diodes .
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Untitled
Abstract: No abstract text available
Text: Schottky switching diodes. Schottky detector diodes. Beam lead detector diodes. Schottky mixer diodes, medium barrier. Beam lead mixer diodes, low barrier.
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Untitled
Abstract: No abstract text available
Text: PBti g e c plessey DC1860 PLANAR DOPED BARRIER W BAND MICROSTRIP COPLANAR MIXER DIODE Planar doped barrier PDB coplanar mixer diodes represent a major advancement in mixer/detector technology. These diodes otter good conversion loss at low local oscillator
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DC1860
100pA
130mV
94GHz
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Untitled
Abstract: No abstract text available
Text: PBtMGEC P L E S S E Y DC1840 Series PLANAR DOPED BARRIER MICROSTRIP LID/MICROLID MIXER DIODES Planar doped barrier PDB LID/MICROLID mixer diodes represent a major advancement in mixer/detector technology. These diodes offer good conversion loss at low local oscillator
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DC1840
375GHz
35GHz
150pA
DC1840
DCI844
DC1843
DC1842
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SPD2828-211
Abstract: SMS7621 DME2333-000 DMF2821-250 sms3923-011 DMJ2455
Text: Section 3 Schottky Diodes Table of Contents Plastic Packaged Surface Mount Schottky Mixer and Detector Diodes . 3-3 Ceramic Chip-on-Board Mixer Quads .
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S3923-004
SMS3923-005
SMS3923-011
SMS3923-015
SMS3924-001
SMS3924-003
SMS3924-004
SMS3924-005
SMS3924-011
SMS3924-015
SPD2828-211
SMS7621
DME2333-000
DMF2821-250
DMJ2455
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Untitled
Abstract: No abstract text available
Text: GEC PLES S EY S l Mi l . O % I> l <; I O K s DC1574/76/77 SILICON SCHOTTKY X-BAND WAVEGUIDE LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer
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DC1574/76/77
DC1570
300mW
150pA
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Untitled
Abstract: No abstract text available
Text: P S H IG E C P L E S S E Y DC1870 Series PLANAR DOPED BARRIER WAVEGUIDE MIXER DIODES Planar doped barrier PDB waveguide mixer diodes represent a major advancement in mixer/detector technology. These diodes offer good conversion loss at low local oscillator
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DC1870
120mV
100mV
110mV
DC1870
DC1871
DC1874
375GHz
150pA
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Untitled
Abstract: No abstract text available
Text: P S tffli GEC PLES S EY DC1570/72 SILICON SCHOTTKY S-BAND WAVEGUIDE LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes Intended primarily for operation as low drive mixer diodes in systems where available local oscillator power is
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DC1570/72
DC1570
300mW
200mV
DC1570
DC1572
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Untitled
Abstract: No abstract text available
Text: 37bflSS2 OGIÔHfiû MSI « P L S B Si GEC PLE SS EY SEMICONDUCTORS DC1575/78 SILICON SCHOTTKY X-BAND MICROSTRIP LOW DRIVE MIXER DIODES DESCRIPTION APPLICATIONS The DC1570 series are medium barrier height silicon mixer diodes intended primarily for operation as low drive mixer
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37bflSS2
DC1575/78
DC1570
300mW
200mV
DC1575
DC1578
150jiA
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