Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFL48V1920
MGFL48V1920
20ohm
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s band
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W DESCRIPTION The MGFL48V1920 is a 60W push-pull type GaAs power FET especially designed for use in 1.9 - 2.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFL48V1920
MGFL48V1920
20ohm
s band
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Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 – 2.2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 – 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFS52BN2122A
MGFS52BN2122A
17GHz
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mitsubishi 4a fet
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 – 2.2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 – 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFS52BN2122A
MGFS52BN2122A
17GHz
mitsubishi 4a fet
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8002 1011 amplifier
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
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MGFL48V1920
MGFL48V1920
gate22
8002 1011 amplifier
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS48V2527 2.5 - 2.7GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFS48V2527 is a 60W push-pull type GaAs Power FET especially designed for use in 2.5 - 2.7GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
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MGFS48V2527
MGFS48V2527
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MGFS48V2527
Abstract: 1348 c23 s 1348 c23
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS48V2527 2.5 - 2.7GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFS48V2527 is a 60W push-pull type GaAs Power FET especially designed for use in 2.5 - 2.7GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
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MGFS48V2527
MGFS48V2527
1348 c23
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MGFL48V1920
Abstract: 12v 20A WITH FET
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
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MGFL48V1920
MGFL48V1920
12v 20A WITH FET
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fet 4901
Abstract: MGF0914A 15815 an 17827
Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0914A L & S BAND G aAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING umt:mm The M G F 0 91 4A G aA s F E T w ith an N -ch an nel sch to kky Gate Mark G ate, is d e sig n e d fo r use U H F band am plifiers.
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MGF0914A
MGF0914A
fet 4901
15815
an 17827
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MGFK41V4045
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFK41V4045 1 4 .0 — 14.5G H z BAND 1 2 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FK4 1V 40 45 is an internally impedance matched GaA sp ow erFET especially designed for use in 1 4 .0 - 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFK41V4045
MGFK41V4045
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V5964 5 .9 — 6.4GHZ BAND 10W INTERNALLY M ATCHED GaAs F ET DESCRIPTION The M G F C 4 0 V 5 9 6 4 is an internally impedance-matched GaAs power FET especially designed fo r use in 5 . 9 — 6 .4 GHz band amplifiers. The herm etically sealed metal-ceramic
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MGFC40V5964
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MGFC45V4450A
Abstract: 2410m
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET: MGFC45V4450A 4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 - 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic
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V4450A
MGFC45V4450A
-45dBc
QUAL40
25deg
2410m
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CM32
Abstract: MGFL48V1920 GR-70
Text: Preliminary MITSUBISHI SEMICONDUCTOR «^QaAs FET> MGFL48V1920 1.9 - 2.0GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFL48V1920 is a 60W push-pull type GaAs Power FET especially designed for use in 1.9 - 2.0GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
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MGFL48V1920
MGFL48V1920
25deg
Gat-98
CM32
GR-70
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MGFC47A4450
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47A4450 4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47A4450 device is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0GHz band amplifiers. The hermetically sealed metal-ceramic package
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MGFC47A4450
MGFC47A4450
47dBm
RG-10
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> w tis s - 001S030 M GFX38V0005 338 • 1 0 .0 — 10.5G H z BAND 6 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 8 V 0 0 0 5 is an internally impedance matched GaAs power F E T especially designed fo r use in 10.0 ~ 10.5
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001S030
GFX38V0005
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GRH111
Abstract: GRH111-0 GRH111-27 MGFS52BN2122A GRH111-1
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SVIOFS52BM2122Â 2.1 - 2.2 GHz BAND 160W GaAs FET D E S C R IP TIO N The MGFS52BN2122A is a 160W push-pull type GaAs Power FET especially designed for use in 2.1 - 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees
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MGFS52BN2122Ã
MGFS52BN2122A
17GHz
GF-49
14GHz
GR708â
GR40-1000
GRH111
GRH111-0
GRH111-27
GRH111-1
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 3 9 V6 4 7 2A 6 .4 — 7.2GHZ BAND 8W IN TE R N A L L Y M ATCH ED GaAs F E T DESCRIPTION The M G F C 3 9 V 6 4 7 2 A isan internally im pedance-m atched GaAs power FET especially designed fo r use in 6 .4 — 7 .2
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LM 4088
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V44S0A P B E t lM Î Î ^ S . S5 ”a ' 4.4 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F C 3 9 V 4 4 5 0 A is an internally im pedance-m atched GaAs power FET especially designed fo r use in 4.4 ~ 5.0
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MGFC39V44S0A
LM 4088
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MGF1200
Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.
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MGF1102
MGF1302
MGF1303B
MGFI323
MGF1402B
MGFI412B
MGF1403B
MGF1423B
MGFI425B
MGFI902B
MGF1200
MGF4310
MGF1100
MGF1412
MGF4301
MGF1304
MGF7003
MGF4305A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC40V52S8 5 .2 ~ 5 .8 G H z BAND 10W IN T E R N A L L Y M A TCH ED GaAs F E T DESCRIPTION The M G F C 4 0 V 5 2 5 8 is an internally impedance-matched GaAs power FET especially designed fo r use in 5 .2 — 5 .8 GHz band amplifiers. The herm etically sealed metal-ceramic
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FC40V52S8
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GR111
Abstract: MGFS48V2527 60W POWER AMPLIFIER CIRCUIT
Text: M ITS U BIS H I S E M IC O N D U C TO R <G aA s FET> Preliminary MGFS48V2527 2.5 - 2.7GHz BAND 60W GaAs FET DESCRIPTION OUTLINE The MGFS48V2527 is a 60W push-pull type GaAs Power FET especially designed for use in 2.5 - 2.7GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
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MGFS48V2527
MGFS48V2527
25deg
GR111
60W POWER AMPLIFIER CIRCUIT
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> p, ►f i t » - M G FC 42V 5964A Mi>i 5pe; - 5 .9 ~ 6 .4 G H z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F C 4 2 V 5 9 6 4 A is an internally im p ed an ce-m atched GaAs power F E T especaillv designed fo r use in 5.9 ~ 6.4
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MINA?* p R Ö MGFC39V7177A - ' y. «'-' f ;«ep^^ e ° ‘ 7 .1 -7 .7 G H * BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION Th e M G F C 3 9 V 7 1 7 7 A is an internally im ped an ce-m atched GaAs power F E T especially designed for use in 7 . 1 —7 .7
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MGFC39V7177A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> „ lNnN M 6FC42V44SOA 4 .4 — 5.0GÜZ BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 42V 4450A is an internally im pedance-matched GaAs power FET especially designed fo r use in 4 . 4 ~ 5 .0 GHz band amplifiers. The hermetically sealed metal-ceramic
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6FC42V44SOA
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