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    MICROWAVE PIN DIODE MA4P Search Results

    MICROWAVE PIN DIODE MA4P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MICROWAVE PIN DIODE MA4P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AG312

    Abstract: No abstract text available
    Text: AG312 Design with PIN Diodes Rev. V3 Introduction The PIN diode finds wide usage in RF, UHF and microwave circuits. It is fundamentally a device whose impedance, at these frequencies, is controlled by its DC excitation. A unique feature of the PIN diode is its


    Original     		PDF AG312 AG312

    40E-14

    Abstract: 60E8 ODS-186 HP4291A M541 MA4PBL027 TTL LS 40e8 ODS-186 outline
    Text: MA4PBL027 HMICTM Silicon Beam-Lead PIN Diodes Rev. V1 Features Absolute Maximum Ratings1 • • • • • • • • • • • @ TA = +25°C Unless otherwise specified Beam-Lead Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation


    Original     		PDF MA4PBL027 40E-14 60E8 ODS-186 HP4291A M541 MA4PBL027 TTL LS 40e8 ODS-186 outline

    diode rj 93

    Abstract: ma4p HP4291A M541 MA4PBL027 20E-14 W-band diode ODS-186
    Text: HMICTM Silicon Beam-Lead PIN Diodes Features • • • • • • • • • • • MA4PBL027 V1 Case Style ODS-1302 Beam-Lead Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch and Impact Protection


    Original     		PDF MA4PBL027 ODS-1302 diode rj 93 ma4p HP4291A M541 MA4PBL027 20E-14 W-band diode ODS-186

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    ODS-255

    Abstract: No abstract text available
    Text: MA4P202,303,504,505,506,604 & 606 Packaged PIN Diodes - ODS-255 Case Style M/A-COM Products Rev. V2 Features • • • • • High Power PIN Diodes Fast Speed PIN Diodes Voltage Ratings to 1000 Volts Long Carrier Lifetime Designs High Reliability for Space/Military Applications


    Original     		PDF MA4P202 ODS-255

    MADRMA0001

    Abstract: madrma0002 MADRMA-0001 macom PIN MADP-042XXX Microwave PIN diode Microwave PIN diode DR65 MA4PH23X MA4P282 AN3021
    Text: RoHS Compliant Application Note AN3021 V1 Selection of M/A-COM PIN Diodes for Microwave Switch Designs Introduction This Application Note is intended to provide practical guidance in the selection of PIN Diodes for switch control circuit functions. Switches, Digital and Analog Attenuators, and Limiters each have unique functions that require


    Original     		PDF AN3021 MADRMA0001 madrma0002 MADRMA-0001 macom PIN MADP-042XXX Microwave PIN diode Microwave PIN diode DR65 MA4PH23X MA4P282

    MA4P506-255

    Abstract: DIODE 255 MA4p303 series MA4P504-255 MA4P604 power diode package MA4P604-255 MA4P202-255 MA4P303-255 MA4P505-255
    Text: MA4P202,303,504,505,506 & 604 Packaged PIN Diodes - ODS-255 Case Style M/A-COM Products Rev. V3 Features • • • • • High Power PIN Diodes Fast Speed PIN Diodes Voltage Ratings to 1000 Volts Long Carrier Lifetime Designs High Reliability for Space/Military Applications


    Original     		PDF MA4P202 ODS-255 MA4P506-255 DIODE 255 MA4p303 series MA4P504-255 MA4P604 power diode package MA4P604-255 MA4P202-255 MA4P303-255 MA4P505-255

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    sot-89 BV SMD TRANSISTOR MARKING CODE

    Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
    Text: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ


    Original     		PDF NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578

    MA47600

    Abstract: No abstract text available
    Text: Silicon PIN Diode Chips Features • GLASS OR SILICON DIOXIDE PASSIVATION 131 ■ HERMETICALLY SEALED CERMACHIP DESIGN ■ FAST SPEED, LOW LOSS MICROWAVE CHIPS ■ ATTENUATOR CHIPS ■ VOLTAGE RATINGS TO 2000 VOLTS ■ WIDE RANGE OF PIN CHARACTERISTICS


    OCR Scan     		PDF MIL-STD-883, MA4P504 MA4P606 MA47600

    MILITARY DIODES

    Abstract: No abstract text available
    Text: M t/X & A Silicon PIN Diode Chips Features • GLASS OR SILICON DIOXIDE PASSIVATION ■ HERMETICALLY SEALED CERMACHIP DESIGN ■ FAST SPEED, LOW LOSS MICROWAVE CHIPS ■ ATTENUATOR CHIPS ■ VOLTAGE RATINGS TO 2000 VOLTS ■ WIDE RANGE OF PIN CHARACTERISTICS


    OCR Scan     		PDF assembli10-332-6789 MILITARY DIODES

    a4p50

    Abstract: No abstract text available
    Text: M/A-COM SEMICONDiBRLNGTON /y m 11 SL.42214 DDQlllfl G • M I C ‘ T ~ 6 T ~ * Silicon PIN Diode Chips Features ■ GLASS OR SILICON DIOXIDE PASSIVATION ■ HERMETICALLY SEALED CERMACHIP DESIGN ■ FAST SPEED, LOW LOSS MICROWAVE CHIPS ■ ATTENUATOR CHIPS


    OCR Scan     		PDF 5b42214 QDD112S a4p50

    MA47047

    Abstract: 65X65 MVA attenuator MA4P150 MA4P151 MA4P152 MA4P153 MA4P154 MA4P155 MA4P156
    Text: AtÜKO'1 M an A M P com pany PIN Diode Chips V 2.00 Features • • • • • • CERMACHIP glass or Silicon Dioxide Passivation Hermetically Sealed CERMACHIP Design Fast Speed, Low Loss Microwave Chips Attenuator Chips Voltage Ratings to 1500 Volts


    OCR Scan     		PDF MIL-STD883, MA47047 65X65 MVA attenuator MA4P150 MA4P151 MA4P152 MA4P153 MA4P154 MA4P155 MA4P156

    MA4P800

    Abstract: No abstract text available
    Text: m an A M P company Beam-Lead PIN Diodes MA4P461, MA4P462, MA4P800, MA4P801 V 2.00 Features • • • • • High Performance Microwave Characteristics Fast Switching Speeds Glass Encapsulated Construction Hermetically Sealed Mechanically Rugged - 6 Grams Minimum


    OCR Scan     		PDF MA4P461, MA4P462, MA4P800, MA4P801 MA4P800

    MA4P461

    Abstract: MA4P800 MA4P801
    Text: Mbmh m an A M P com pany Beam-Lead PIN Diodes MA4P461, MA4P462, MA4P800, MA4P801 V 2.00 Features • High Perform ance Microwave Characteristics • Fast Switching Speeds • Glass Encapsulated Construction • Hermetically Sealed • M echanically Rugged - 6 Gram s Minimum


    OCR Scan     		PDF MA4P461, MA4P462, MA4P800, MA4P801 MA4P461 MA4P800 MA4P801

    MA4P800

    Abstract: No abstract text available
    Text: AjÙ^m Silicon Beam Lead PIIM Diodes Features • HIGH PERFORMANCE MICROWAVE CHARACTERISTICS ■ FAST SWITCHING SPEEDS ■ GLASS ENCAPSULATED CONSTRUCTION 129 ■ HERMETICALLY SEALED ■ MECHANICALLY RUGGED — 6 GRAMS MINIMUM BEAM STRENGTH Description M/A-COM’s series of Silicon Beam Lead PIN diodes are


    OCR Scan     		PDF

    MA4P800

    Abstract: No abstract text available
    Text: Silicon Beam Lead PIN Diodes Features • HIGH PERFORMANCE MICROWAVE CHARACTERISTICS ■ FAST SWITCHING SPEEDS ■ GLASS ENCAPSULATED CONSTRUCTION ■ HERMETICALLY SEALED ■ MECHANICALLY RUGGED — 6 GRAMS MINIMUM BEAM STRENGTH Description M/A-COM’s series of Silicon Beam Lead PIN diodes are


    OCR Scan     		PDF

    MA4P506-1072

    Abstract: MA4P504-30 MA4P504-1072 MA4P506-258
    Text: m an A M P company Packaged PIN Diodes MA4P100 thru 600 Series Features • • • • • • High Power PIN Diodes Fast Speed PIN Diodes Voltage Ratings to 1500 Volts Long Carrier Lifetime Designs Wide Variety of Hermetic Packages High Reliability for Space/Military Applications


    OCR Scan     		PDF MA4P100 MA4P202, MA4P203, MA4P303, MA4P404 MA4P102) MA4P504, MA4P505, MA4P506) MA4P604, MA4P506-1072 MA4P504-30 MA4P504-1072 MA4P506-258

    MA4P506-1072

    Abstract: ma4p506
    Text: m Ik c V i » a n A M P co m p a n y Packaged PIN Diodes MA4P100 thru 600 Series V 2.00 Features • • • • • • High Power PIN Diodes Fast Speed PIN Diodes Voltage Ratings to 1500 Volts Long Carrier Lifetime Designs Wide Variety of Hermetic Packages


    OCR Scan     		PDF MA4P100 MA4P202, MA4P203, MA4P303, MA4P404 MA4P102) MA4P504, MA4P505, MA4P506) 10//A MA4P506-1072 ma4p506