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    MICROWAVE BJT 2GHZ Search Results

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    RX1214B300YI Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy

    MICROWAVE BJT 2GHZ Datasheets Context Search

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    power BJT

    Abstract: HP8971C MMIC s-band monolithic amplifier MAR MONOLITHIC AMPLIFIERS GST-2 silicon bipolar transistor low noise amplifier amplifier lna low noise amplifier s-band TRANSISTOR noise figure measurements HP8970B
    Text: ASICs Application Note 644: Mar 17, 2000 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz 1998 IEEE. Reprinted, with permission, from 1998 IEEE Microwave and Guided Wave Letters, Vol. 3, No. 3, pp. 136-137 Abstract A two-stage 1.9GHz monolithic low-noise amplifier LNA with a measured noise figure of


    Original     		PDF -20dB, com/an644 power BJT HP8971C MMIC s-band monolithic amplifier MAR MONOLITHIC AMPLIFIERS GST-2 silicon bipolar transistor low noise amplifier amplifier lna low noise amplifier s-band TRANSISTOR noise figure measurements HP8970B

    varactor diode model in ADS

    Abstract: zo 607 transistor zo 607 ADS varactor diode yig oscillator hp working of colpitts oscillator common emitter bjt how to test Triode Thyristors applications of blocking oscillator triode
    Text: Advanced Design System 2001 Oscillator DesignGuide August 2001 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF Index-31 varactor diode model in ADS zo 607 transistor zo 607 ADS varactor diode yig oscillator hp working of colpitts oscillator common emitter bjt how to test Triode Thyristors applications of blocking oscillator triode

    LNA ku-band

    Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
    Text: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)


    Original     		PDF 11a/b/g) 5988-9866EN LNA ku-band ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz

    N6 Amplifier

    Abstract: MMic Marking 3 SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 mmic marking A MMIC N6 MARKING N6 marking n6 amplifier marking N6 mmic NLB-310 NLB-310-E
    Text: NLB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM


    Original     		PDF NLB-310 10GHz NLB-310 NLB-310-T1 NLB-310-E N6 Amplifier MMic Marking 3 SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 mmic marking A MMIC N6 MARKING N6 marking n6 amplifier marking N6 mmic NLB-310-E

    bias of GaAs MESFET

    Abstract: NLB-300-T1 MMIC Amplifier Micro-X 10GHz power amplifier mmic marking A NLB-300 NLB-300-E MMic Marking 3 10GHz mmic GaAs Amplifier Micro-X Marking A
    Text: NLB-300 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM


    Original     		PDF NLB-300 10GHz NLB-300 NLB-300-T1 NLB-300-E bias of GaAs MESFET MMIC Amplifier Micro-X 10GHz power amplifier mmic marking A NLB-300-E MMic Marking 3 10GHz mmic GaAs Amplifier Micro-X Marking A

    N4 MMIC

    Abstract: marking n4 mmic N4 Amplifier mmic marking A MICROWAVE BJT 2GHZ NLB-400-E MMIC Amplifier marking A Cascadable SiGe HBT MMIC Amplifier GaAs Amplifier Micro-X Marking A MMic Marking 3
    Text: NLB-400 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM


    Original     		PDF NLB-400 NLB-400 NLB-400-T1 NLB-400-E N4 MMIC marking n4 mmic N4 Amplifier mmic marking A MICROWAVE BJT 2GHZ NLB-400-E MMIC Amplifier marking A Cascadable SiGe HBT MMIC Amplifier GaAs Amplifier Micro-X Marking A MMic Marking 3

    monolithic amplifier MAR 3 app note

    Abstract: HP8971C 3055 transistor bjt AN644 APP644 amplifier lna low noise amplifier s-band S-Band Power Amplifier intercept point MICROWAVE BJT 2GHZ
    Text: Maxim > App Notes > ASICs WIRELESS, RF, AND CABLE Keywords: Maxim, QuickChip, silicon bipolar, LNA, 1.9 GHz, QuickChip 9, semi-custom, ASIC, low noise amplifier, quick chip Mar 17, 2000 APPLICATION NOTE 644 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz


    Original     		PDF -20dB, com/an644 AN644, APP644, Appnote644, monolithic amplifier MAR 3 app note HP8971C 3055 transistor bjt AN644 APP644 amplifier lna low noise amplifier s-band S-Band Power Amplifier intercept point MICROWAVE BJT 2GHZ

    power one pmp 3.24

    Abstract: MARKING N6 RFMD MMIC N6 MARKING RFMD amplifier marking n6 MMIC Amplifier marking D MMIC Amplifier Micro-X marking D 10GHZ GAAS 10GHz mmic 100GHz BJT
    Text: NLB-310 NLB-310Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Plastic Features „ „ „ „ „ GND 4 Reliable, Low-Cost HBT Design 12.7dB Gain, +12.6dBm


    Original     		PDF NLB-310Cascadable 10GHz NLB-310 NLB-310 DS060412 power one pmp 3.24 MARKING N6 RFMD MMIC N6 MARKING RFMD amplifier marking n6 MMIC Amplifier marking D MMIC Amplifier Micro-X marking D 10GHZ GAAS 10GHz mmic 100GHz BJT

    DC TO 20GHZ RF AMPLIFIER MMIC

    Abstract: 100ghz MMIC POWER AMPLIFIER hemt RESISTOR 502 NBB-502 NBB-502-E NBB-502-T1 GaN Amplifier 20GHz IT 502
    Text: NBB-502 NBB-502Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz RoHS Compliant & Pb-Free Product Package Style: MPGA, Bowtie, 3x3, Ceramic GENERAL PURPOSE AMPLIFIERS LNAs, HPAs, LINEAR AMPS 3 Features


    Original     		PDF NBB-502 NBB-502Cascadable DS060124 DC TO 20GHZ RF AMPLIFIER MMIC 100ghz MMIC POWER AMPLIFIER hemt RESISTOR 502 NBB-502 NBB-502-E NBB-502-T1 GaN Amplifier 20GHz IT 502

    70GHz HEMT Amplifier

    Abstract: No abstract text available
    Text: NLB-300 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers


    Original     		PDF NLB-300 10GHz NLB-300 70GHz HEMT Amplifier

    NE5510279A

    Abstract: uPB1512TU NE350184C dvbt diagram NE3503M04 5.8 ghz Transceiver IC NE552 gp bjt InMarSat demodulator ne3210s01
    Text: Unplugged. Radio communication Higher frequency communication systems are one of today's growth markets. One factor is the increasing demand for point-to-point or pointto-multipoint radio links within the backbone of the 2G and 3G cellular networks. The other is


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NBB-402 NBB-402Cascadable Broadband GaAs MMIC Amplifier DC to 8GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 8GHz Package Style: MPGA, Bowtie, 3x3, Ceramic Features      Reliable, Low-Cost HBT Design 15.0dB Gain, +15.8dBm P1dB@2GHz High P1dB of


    Original     		PDF NBB-402Cascadable NBB-402 NBB-402 10GHz 14GHz 15GHz 20GHz DS110103

    84-1LMI

    Abstract: NBT-168 NBT-168-D NBT-168-T1 BO 336 choke flange
    Text: NBT-168 4 MICROWAVE GaInP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier GENERAL PURPOSE AMPLIFIERS 4 Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,


    Original     		PDF NBT-168 12GHz NBT-168 12GHz. NBT-1685 NBT-168) 84-1LMI NBT-168-D NBT-168-T1 BO 336 choke flange

    84-1LMI

    Abstract: GaN matching 100 watt NBT-168 MMB-330 NBT-168-D NBT-168-T1 GaN Amplifier 12GHz GaN Bias 25 watt 168E BJT IC Vce
    Text: NBT-168 MICROWAVE InGaP/GaAs DISCRETE HBT DC TO 12GHz Typical Applications • Active Amplifier in VCO Circuit • Gain Stage • Buffer Amplifier Product Description The NBT-168 discrete HBT is ideal for low-cost amplifier and oscillator applications up to 12GHz. Low noise figure,


    Original     		PDF NBT-168 12GHz NBT-168 12GHz. NBT-168-D) NBT-168) 84-1LMI GaN matching 100 watt MMB-330 NBT-168-D NBT-168-T1 GaN Amplifier 12GHz GaN Bias 25 watt 168E BJT IC Vce

    Untitled

    Abstract: No abstract text available
    Text: NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Package Style: MPGA, Bowtie, 3x3, Ceramic Features      Reliable, Low-Cost HBT Design 12.0dB Gain, +13.7dBm P1dB@2GHz Pin 1 Indicator High P1dB of [email protected] and [email protected]


    Original     		PDF NBB-302 12GHz NBB-302 10GHz 14GHz 15GHz 20GHz DS101207

    current feedback amplifier 4Ghz

    Abstract: No abstract text available
    Text: NBB-502 NBB-502Cascadable Broadband GaAs MMIC Amplifier DC to 4GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 4GHz Package Style: MPGA, Bowtie, 3x3, Ceramic Features      Reliable, Low-Cost HBT Design 19.0dB Gain, +13.0dBm P1dB@2GHz High P1dB of


    Original     		PDF NBB-502Cascadable NBB-502 NBB-502 10GHz 14GHz 15GHz 20GHz DS110104 current feedback amplifier 4Ghz

    Untitled

    Abstract: No abstract text available
    Text: NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz RoHS Compliant & Pb-Free Product Package Style: MPGA, Bowtie, 3x3, Ceramic Features „ „ „ „ „ Reliable, Low-Cost HBT Design Pin 1 Indicator 12.0dB Gain, +13.7dBm P1dB@2GHz 1 2 3 8 9 4 7 6 5


    Original     		PDF NBB-302 12GHz NBB-302 10GHz 14GHz 15GHz 20GHz DS060124

    Untitled

    Abstract: No abstract text available
    Text: RFSW2043 RFSW2043DC to 20Ghz SPDT pHEMT GaAs Switch DC TO 20GHz SPDT pHEMT GaAs SWITCH Package: QFN, 16 pin, 0.8mmx3mmx3mm NC A B A 16 15 14 13 NC 1 12 NC GND 2 11 GND RF2 3 10 RF1 GND 4 9 GND Features  Low Insertion Loss: 2.25dB at 20GHz  High Isolation: 26dB at 20GHz


    Original     		PDF RFSW2043 RFSW2043DC 20Ghz 20GHz RFSW2043 DS120718

    Untitled

    Abstract: No abstract text available
    Text: RFSW2045 RFSW2045DC to 16Ghz SP4T pHEMT GaAs Switch DC TO 16GHz SP4T pHEMT GaAs SWITCH Package: QFN, 24 pin, 0.8mm x 4mm x 4mm 6 5 4 3 2 1 7 Features  8 Low Insertion Loss: 2.4dB at 16GHz  High Isolation: 38dB at 16GHz  21ns Switching Speed  GaAs pHEMT Technology


    Original     		PDF RFSW2045 RFSW2045DC 16Ghz 16GHz RFSW2045 DS120530

    RFSW2044SR

    Abstract: No abstract text available
    Text: RFSW2044 RFSW2044DC to 25Ghz SPST pHEMT GaAs Switch DC TO 25GHz SPST pHEMT GaAs SWITCH Package: QFN, 16 pin, 0.8mm x 3mm x 3mm NC GND RFOut GND 16 15 14 13 NC 1 12 NC NC 2 11 V2 NC 3 10 V1 NC 4 9 NC Features  Low Insertion Loss: 2.7dB at 25GHz  High Isolation: 41dB at 25GHz


    Original     		PDF RFSW2044DC 25Ghz RFSW2044 RFSW2044 DS120530 RFSW2044SR

    VCC1

    Abstract: GaN Amplifier 20GHz
    Text: NDA-320-D InGaP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description


    Original     		PDF NDA-320-D NDA-320-D 10GHz 14GHz 15GHz 20GHz VCC1 GaN Amplifier 20GHz

    RFSW2041

    Abstract: 20GHz JESD22-A114 RFmd SPDT 211nc RFSW2041SB
    Text: RFSW2041 RFSW2041DC to 20Ghz SPDT pHEMT GaAs Switch DC TO 20GHz SPDT pHEMT GaAs SWITCH Package: QFN, 16-pin, 0.8mmx3mmx3mm V2 V1 GND RF1 16 15 14 13 NC 1 12 GND GND 2 11 NC RFIN 3 10 NC GND 4 9 GND Features  Low Insertion Loss: 1.7dB at 20GHz  High Isolation: 38dB at 20GHz


    Original     		PDF RFSW2041 RFSW2041DC 20Ghz 20GHz 16-pin, RFSW2041 DS100830 JESD22-A114 RFmd SPDT 211nc RFSW2041SB

    84-1LMI

    Abstract: Ablebond 84-1LMI NDA-410-D GaN Bias 25 watt
    Text: NDA-410-D 4 GaInP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 11GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers GENERAL PURPOSE


    Original     		PDF NDA-410-D 11GHz NDA-410-D 84-1LMI Ablebond 84-1LMI GaN Bias 25 watt

    HBT 20Ghz

    Abstract: No abstract text available
    Text: RFSW2040 RFSW2040DC to 20Ghz SPST pHEMT GaAs Switch DC TO 20GHz SPST pHEMT GaAs SWITCH Package: QFN, 16 pin, 0.8mm x 3mm x 3mm Features  Low Insertion Loss: 1.4dB at 20GHz  High Isolation: 37dB at 20GHz  Excellent Return Loss  21nS Switching Speed


    Original     		PDF RFSW2040DC 20Ghz RFSW2040 RFSW2040 DS120530 HBT 20Ghz