Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MICRO TRANSISTOR 5C 08 Search Results

    MICRO TRANSISTOR 5C 08 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MICRO TRANSISTOR 5C 08 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT


    Original     		PDF SPA2318Z SPA2318ZLow 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz the-9421 DS110720

    micro transistor 5c 08

    Abstract: No abstract text available
    Text: MCC MMBTA13 MMBTA14   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • NPN Darlington Amplifier Transistor Operating And Storage Temperatures –55OC to +150OC


    Original     		PDF MMBTA13 MMBTA14 150OC 556OC/W 225mWatts MMBTA14 OT-23 100uAdc, 30Vdc, micro transistor 5c 08

    555c

    Abstract: micro transistor 5c 08 marking t1f 555c transistor npn
    Text: MCC MMBTA13 MMBTA14   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • NPN Darlington Amplifier Transistor Operating And Storage Temperatures –55OC to +150OC


    Original     		PDF MMBTA13 MMBTA14 150OC 556OC/W 225mWatts MMBTA13 MMBTA14 OT-23 100uAdc, 555c micro transistor 5c 08 marking t1f 555c transistor npn

    25c2625

    Abstract: ECB-101161 267M3502104
    Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT


    Original     		PDF SPA2318ZLow SPA2318Z 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz DS121024 25c2625 ECB-101161 267M3502104

    an 214 amp schematic diagram

    Abstract: ROHM MCR03 ECB-101161
    Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Features GaAs MESFET      InGaP HBT VC1 Si BiCMOS VBIAS SiGe HBT GaAs pHEMT RFIN Si CMOS Si BJT


    Original     		PDF SPA2318ZLow SPA2318Z 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz an 214 amp schematic diagram ROHM MCR03 ECB-101161

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components MMBTA13 MMBTA14   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Operating And Storage Temperatures –55OC to +150OC RθJA is 556OC/W Mounted on FR-5 PCB 1.0” x0.75” x0.062”


    Original     		PDF MMBTA13 MMBTA14 150OC 556OC/W 225mWatts MMBTA13 MMBTA14 OT-23

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components MMBTA13 MMBTA14   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Operating And Storage Temperatures –55OC to +150OC RθJA is 556OC/W Mounted on FR-5 PCB 1.0” x0.75” x0.062”


    Original     		PDF MMBTA13 MMBTA14 150OC 556OC/W 225mWatts MMBTA14 100uAdc, 30Vdc,

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components MMBTA13 MMBTA14   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Operating And Storage Temperatures –55OC to +150OC RθJA is 556OC/W Mounted on FR-5 PCB 1.0” x0.75” x0.062”


    Original     		PDF MMBTA13 MMBTA14 150OC 556OC/W 225mWatts MMBTA13 MMBTA14 OT-23

    toko 5c

    Abstract: MCH18 MCR03 SPA-2318 TAJB106K020R SPA-2318Z
    Text: SPA-2318 Z SPA-2318(Z) Low Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: ESOP-8 Product Description Features RFMD’s SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)


    Original     		PDF SPA-2318 1700MHz 2200MHz 1960MHz 2140MHz diPA-2318 SPA-2318 SPA-2318Z toko 5c MCH18 MCR03 TAJB106K020R SPA-2318Z

    Untitled

    Abstract: No abstract text available
    Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor HBT


    Original     		PDF SPA2318Z SPA2318ZLow 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz SPA2318ZSQ

    ECB-101161

    Abstract: No abstract text available
    Text: SPA2318Z SPA2318ZLow Noise, High Gain SiGe HBT 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS NOT FOR NEW DESIGNS Package: Exposed Pad SOIC-8 Product Description Features  High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel


    Original     		PDF SPA2318ZLow SPA2318Z 1700MHz 2200MHz SPA2318Z 1960MHz 2140MHz DS111219 ECB-101161

    marking t1f

    Abstract: No abstract text available
    Text: MCC MMBTA13 MMBTA14   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • NPN Darlington Amplifier Transistor Operating And Storage Temperatures –55OC to 150OC


    Original     		PDF MMBTA13 MMBTA14 150OC 556OC/W 225mWatts MMBTA14 OT-23 100uAdc, 30Vdc, marking t1f

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components MMBTA13 MMBTA14   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Operating And Storage Temperatures –55OC to +150OC RθJA is 556OC/W Mounted on FR-5 PCB 1.0” x0.75” x0.062”


    Original     		PDF MMBTA13 MMBTA14 150OC 556OC/W 225mWatts MMBTA13 MMBTA14 OT-23

    IFR7821

    Abstract: IFR7821-TR R013F power supply cuk GRM31CR61E106K B320A CRCW08050000FRT1 WSL-2010-R013-F MIC2196 MIC6211-BM5
    Text: MIC2196 CUK Evaluation Board Micrel MIC2196 CUK Evaluation Board 400kHz SO-8 CUK Introduction Quick-Start Guide Refer to Figure 1 for the following: 1. Connect the positive terminal from the power supply to VIN post J1 on the MIC2196 CUK evaluation board.


    Original     		PDF MIC2196 400kHz IFR7821 IFR7821-TR R013F power supply cuk GRM31CR61E106K B320A CRCW08050000FRT1 WSL-2010-R013-F MIC6211-BM5

    sharp Universal lnb

    Abstract: diseqc diseqc master DISEQC SWITCH transistor e5 op AN10126 diseqc amplifier diseqc 2.0 switch 7805 2A 1N4148
    Text: INTEGRATED CIRCUITS ABSTRACT This Application Note describes how the new version 2.0 microcontroller differs from the original device DiSEqC Slave microcontroller software version 1.0 and 1.1, and gives preliminary data and applications information. AN10162


    Original     		PDF AN10162 LPC76x AN10126 8xC750, sharp Universal lnb diseqc diseqc master DISEQC SWITCH transistor e5 op AN10126 diseqc amplifier diseqc 2.0 switch 7805 2A 1N4148

    1000w audio amplifier circuit diagram class D

    Abstract: 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 12v 1000W AUDIO AMPLIFIER SCHEMATIC 100W smps amplifier circuit diagram class D 1000w 1000w smps audio amplifier circuit diagram 1000w transistor audio amplifier circuit diagram SCHEMATIC 12v 1000w smps 1000W AUDIO AMPLIFIER class D
    Text: -1- IRAUDPS1 12V System Scalable 250W to1000W Audio Power Supply For Class D Audio Power Amplifiers Using the IR2085 self oscillating gate driver And Direct FETS IRF6648 By Manuel Rodríguez CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of


    Original     		PDF to1000W IR2085 IRF6648 7A/15A 1000w audio amplifier circuit diagram class D 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 12v 1000W AUDIO AMPLIFIER SCHEMATIC 100W smps amplifier circuit diagram class D 1000w 1000w smps audio amplifier circuit diagram 1000w transistor audio amplifier circuit diagram SCHEMATIC 12v 1000w smps 1000W AUDIO AMPLIFIER class D

    800w class d circuit diagram schematics

    Abstract: SCHEMATIC 1000w smps 1000w SMPS CIRCUIT DIAGRAM 1000w class d circuit diagram schematics 500w class d circuit diagram schematics amplifier circuit diagram class D 1000w SCHEMATIC 12v 1000w smps 1000w audio amp circuit diagram 1000w audio amplifier circuit diagram class D 800w audio amplifier circuit diagram
    Text: -1- IRAUDPS1 12V System Scalable 250W to1000W Audio Power Supply For Class D Audio Power Amplifiers Using the IR2085 self oscillating gate driver And Direct FETS IRF6648 By Manuel Rodríguez CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of


    Original     		PDF to1000W IR2085 IRF6648 4V/800W 800w class d circuit diagram schematics SCHEMATIC 1000w smps 1000w SMPS CIRCUIT DIAGRAM 1000w class d circuit diagram schematics 500w class d circuit diagram schematics amplifier circuit diagram class D 1000w SCHEMATIC 12v 1000w smps 1000w audio amp circuit diagram 1000w audio amplifier circuit diagram class D 800w audio amplifier circuit diagram

    1000w subwoofer amplifier PCB layout

    Abstract: IRS2085 IR2093 12v 1000W AUDIO AMPLIFIER amplifier circuit diagram class D 1000w 500w push-pull power schematic diagram 1000w smps audio amplifier circuit diagram 1000w SMPS CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 1000w amplifier circuit diagram
    Text: -1- IRAUDPS1 12V System Scalable 250W to1000W Audio Power Supply For Class D Audio Power Amplifiers Using the IR2085 self oscillating gate driver And Direct FETS IRF6648 By Manuel Rodríguez CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of


    Original     		PDF to1000W IR2085 IRF6648 4V/800W 1000w subwoofer amplifier PCB layout IRS2085 IR2093 12v 1000W AUDIO AMPLIFIER amplifier circuit diagram class D 1000w 500w push-pull power schematic diagram 1000w smps audio amplifier circuit diagram 1000w SMPS CIRCUIT DIAGRAM 1000w rms audio amplifier circuit diagram layout 1000w amplifier circuit diagram

    555 timer smps

    Abstract: No abstract text available
    Text: n z z S G S - T H O M S O N ^•7/. KfflD [^©[lL[i©¥[^©KilD©@ L6561 POWER FACTOR CORRECTOR PRO DU CT PREVIEW • VERY PRECISE ADJUSTABLE OUTPUT OVERVOLTAGE PROTECTION ■ MICRO POWER START-UP CURRENT 5C jATYP.) ■ VERYLOW OPERATING SUPPLY CURRENT (4mA TYP.)


    OCR Scan     		PDF L6561 400mA DIP8/S08 L6561 L6560 555 timer smps

    473201A8

    Abstract: lb561 ETD 41 035 L6561 orega OREGA 473201A8 L6560 L6561C L6561DC L6561DI
    Text: nzz SGS-THOMSON ^•7/. KfflD [^©[lL[I©¥[^©KilD©@ L6561 POWER FACTOR CORRECTOR PRO DU CT PREVIEW • VERY PRECISE ADJUSTABLE OUTPUT OVERVOLTAGE PROTECTION ■ MICRO POWER START-UP CURRENT 5C jATYP.) ■ VERYLOW OPERATING SUPPLY CURRENT (4mA TYP.) ■ INTERNAL START-UP TIMER


    OCR Scan     		PDF L6561 400mA DIP8/S08 L6561 L6560 473201A8 lb561 ETD 41 035 orega OREGA 473201A8 L6561C L6561DC L6561DI

    Untitled

    Abstract: No abstract text available
    Text: . RF2306 R F MICRO DEVICES GENERAL PURPOSE AM PLIFIER Typical Applications • Broadband, Low Noise Gain Blocks Final PA for Low Power Applications • IF or RF Buffer Amplifiers Portable Battery Powered Equipment • Driver Stage for Power Amplifiers Broadband Test Equipment


    OCR Scan     		PDF RF2306 RF2306 2000MHz. G0D0512

    Untitled

    Abstract: No abstract text available
    Text: n z z SGS-THOMSON li!iilD g[Si [llLi ¥MD(gi L6561 POWER FACTOR CORRECTOR PRO DU CT PREVIEW • VERY PRECISE ADJUSTABLE OUTPUT OVERVOLTAGE PROTECTION ■ MICRO POWER START-UP CURRENT (5C jATYP.) ■ VERYLOW OPERATING SUPPLY CURRENT (4mA TYP.) ■ INTERNAL START-UP TIMER


    OCR Scan     		PDF L6561 400mA DIP8/S08 L6561 L6560 ap0260

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


    OCR Scan     		PDF

    LCD inverter tm 0917

    Abstract: tm 0917 lcd inverter diode E51A inverter tm 0917 E55B e09a mc144115 MC145000P mc144115p EL0201
    Text: Order this document as AN459/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN459 A Monitor for the MC68HC05E0 Peter Topping, MCU Applications Group, Motorola Ltd., East Kilbride INTRODUCTION Development systems for single-chip MCUs can be complex and expensive. This can dissuade potential


    OCR Scan     		PDF AN459/D AN459 MC68HC05E0 M6805 MC146805E2 MC68HC05E0 LCD inverter tm 0917 tm 0917 lcd inverter diode E51A inverter tm 0917 E55B e09a mc144115 MC145000P mc144115p EL0201