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    MH 1051 Search Results

    MH 1051 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10514S10Y8 Renesas Electronics Corporation 6KX4 ECL I/O SRAM Visit Renesas Electronics Corporation
    10514S15Y8 Renesas Electronics Corporation 6KX4 ECL I/O SRAM Visit Renesas Electronics Corporation
    10514S10C Renesas Electronics Corporation 6KX4 ECL I/O SRAM Visit Renesas Electronics Corporation
    10514S15C Renesas Electronics Corporation 6KX4 ECL I/O SRAM Visit Renesas Electronics Corporation
    10514S10E Renesas Electronics Corporation 6KX4 ECL I/O SRAM Visit Renesas Electronics Corporation
    SF Impression Pixel

    MH 1051 Price and Stock

    Samtec Inc TMMH-105-01-F-DV-A-010-M-TR

    Headers & Wire Housings Low Profile Header S trips 2.00 mm Pitch
    Free Sample
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    Mouser Electronics TMMH-105-01-F-DV-A-010-M-TR 250
    • 1 $1.87
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    • 100 $1.55
    • 1000 $1.24
    • 10000 $1.06
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    Samtec Inc TMMH-105-01-F-DV-A-009-M-TR

    Headers & Wire Housings Low Profile Header S trips 2.00 mm Pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TMMH-105-01-F-DV-A-009-M-TR
    • 1 $1.87
    • 10 $1.87
    • 100 $1.41
    • 1000 $1.24
    • 10000 $1.06
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    Siemens 3VA51051MH310AA0

    Circuit Breakers BRKR 3VA51 3P 5A 65KA MCP HI
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    Mouser Electronics 3VA51051MH310AA0
    • 1 $528.57
    • 10 $505.46
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    Siemens 3VA51051MH360AA0

    Circuit Breakers BRKR 3VA51 3P 5A 65KA MCP HI AL
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    Mouser Electronics 3VA51051MH360AA0
    • 1 $620.41
    • 10 $593.31
    • 100 $593.31
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    Siemens 3VA51051MH320AA0

    Circuit Breakers BRKR 3VA51 3P 5A 65KA MCP HI NUT
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    Mouser Electronics 3VA51051MH320AA0
    • 1 $628.32
    • 10 $601.16
    • 100 $601.16
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    MH 1051 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mil grade LED lamps

    Abstract: 103x10
    Text: Spec No. Date Page Ver. A-MH-038-00 2008/11/25 1/8 A-00 Super Top LED STL / E3 Series PART NO. : EOM-FTxSU0-xx Technical Description STL/E3 LED is EOI’s new generation high power LED package. The package is designed to produce high light output with good reliability performance at very high driving current, and allows designer to


    Original     		PDF -MH-038-00 mil grade LED lamps 103x10

    mil grade LED lamps

    Abstract: ULS-11
    Text: Spec No. Date Page Ver. A-MH-039-00 2008/11/25 1/8 A-00 Super Top LED STL / E3 Series PART NO. : EOM-FTxSU0-xx Technical Description STL/E3 LED is EOI’s new generation high power LED package. The package is designed to produce high light output with good reliability performance at very high driving current, and allows designer to


    Original     		PDF -MH-039-00 mil grade LED lamps ULS-11

    M83446/08

    Abstract: No abstract text available
    Text: # IN Re DU fe CT re AN nc e CE (µ TO H LE ) RA NC Q E MI NI MU M TE ST FR EQ UE SR NC F MI Y (M NI MU Hz DC ) M R ( MH MA ES z) XI IST M A CU UM NC (O E R HM MA RE S X. NT (m RA ) A) TI NG DA SH PA RT Micro i Chip Inductors MI L NU MB ER Series 105 & 108


    Original     		PDF 100ons MIL-PRF-83446 MIL-PRF-83446/8 105-102KS 108-473KS) M83446/08

    Untitled

    Abstract: No abstract text available
    Text: # IN Re DU fe CT re AN nc e CE (µ TO H LE ) RA NC Q E MI NI MU M TE ST FR EQ UE SR NC F MI Y (M NI MU Hz DC ) M R ( MH MA ES z) XI IST M A CU UM NC (O E R HM MA RE S X. NT (m RA ) A) TI NG DA SH PA RT Micro i Chip Inductors MI L NU MB ER Series 105 & 108


    Original     		PDF

    SHDSL chips

    Abstract: 1085 CT Globespan chip set smd 1034 BCM6010 BT8952 BT8960 SK70704
    Text: HDSL Coupling Transformers FEATURES: •Supports Industry Standard HDSL/HDSL2 Transceivers •Operating Temperature Range of -40 C to 85°C •Excellent Total Harmonic Distortion Characteristics •Meets Standard Dielectric Withstanding Voltage Requirements


    Original     		PDF SK70704 BCM6010 BT8921/70, BT8960 BT8970/RS8973 SHDSL chips 1085 CT Globespan chip set smd 1034 BT8952 BT8960

    vogt -sumida-5432001800

    Abstract: vogt 573 10 270 20 vogt 545 vogt a3 VOGT W1 573 10 270 20 545 01 122 00 vogt VOGT K3 vogt IL 050 321 31 01 vogt 545 23 127 00 vogt transformer 545 35
    Text: COMPONENTS | MODULES | CORES 2011 SUMIDA Components & Modules GmbH Dr. Hans-Vogt-Platz 1 | D-94130 Obernzell Phone: +49/85 91/937-100 Fax: +49/85 91/937-103 E-Mail: [email protected] Internet: www.sumida-eu.com COMPONENTS | MODULES | CORES -2- INTRODUCTION


    Original     		PDF D-94130 vogt -sumida-5432001800 vogt 573 10 270 20 vogt 545 vogt a3 VOGT W1 573 10 270 20 545 01 122 00 vogt VOGT K3 vogt IL 050 321 31 01 vogt 545 23 127 00 vogt transformer 545 35

    Untitled

    Abstract: No abstract text available
    Text: UM10512 NXP 半导体 基于 UBA2211 的 230V 12WCFL 演示板 UM 10512 基于 SSL2109 的参考板 版本.1—2012 年 1 月 10 日 用户手册 文档信息 信息 内容 关键字 SSL2109，buck，控制器，参考板，LED 驱动，SSL2108，改 进型 LED 灯


    Original     		PDF UM10512 UBA2211 12WCFL SSL2109 SSL2109ï SSL2108ï

    BUD636A

    Abstract: No abstract text available
    Text: BUD636A Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature


    Original     		PDF BUD636A D-74025 BUD636A

    BUD636A

    Abstract: No abstract text available
    Text: BUD636A Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature Optimized RBSOA


    Original     		PDF BUD636A D-74025 18-Jul-97 BUD636A

    power transistor Ic 4A NPN smd

    Abstract: BUD636A ic 8853
    Text: BUD636A TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor SWOT D Very low dynamic saturation D HIGH SPEED technology D Very low operating temperature D Planarpassivation D Optimized RBSOA D 100 kHz switching rate


    Original     		PDF BUD636A D-74025 power transistor Ic 4A NPN smd BUD636A ic 8853

    transistor SMD 520

    Abstract: BUD636A
    Text: BUD636A TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planarpassivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature


    Original     		PDF BUD636A D-74025 transistor SMD 520 BUD636A

    BUF636A

    Abstract: No abstract text available
    Text: BUF636A TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planarpassivation 100 kHz switching rate Very low switching losses Very low dynamic saturation


    Original     		PDF BUF636A D-74025 BUF636A

    BUF636A

    Abstract: buf636
    Text: BUF636A TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor SWOT D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature


    Original     		PDF BUF636A D-74025 BUF636A buf636

    BUF636A

    Abstract: 5V rectifier ic
    Text: BUF636A Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature


    Original     		PDF BUF636A D-74025 26-Sep-97 BUF636A 5V rectifier ic

    2a1100

    Abstract: BUF620
    Text: BUF620 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature


    Original     		PDF BUF620 D-74025 18-Jul-97 2a1100 BUF620

    BUF620

    Abstract: No abstract text available
    Text: BUF620 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor SWOT D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature


    Original     		PDF BUF620 D-74025 BUF620

    diode cc 3053

    Abstract: 2n3772 EQUIVALENT 2N3771 1N1186A 2N3772 2n3771 equivalent 2N3772 JAN
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 January 2009. MIL-PRF-19500/413F 15 October 2008 SUPERSEDING MIL-PRF-19500/413E 27 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER,


    Original     		PDF MIL-PRF-19500/413F MIL-PRF-19500/413E 2N3771 2N3772, MIL-PRF-19500. diode cc 3053 2n3772 EQUIVALENT 1N1186A 2N3772 2n3771 equivalent 2N3772 JAN

    diode cc 3053

    Abstract: cc 3053 2n3771 equivalent cc 3053 diode 2N3771 equivalent transistor 2n3772 EQUIVALENT 2n3771 2N3772 K 3053 TRANSISTOR MIL-PRF19500
    Text: This documentation process conversion measures necessary to comply with this revision shall be completed by 30 September 1999 INCH-POUND MIL-PRF-19500/413C 30 July 1999 SUPERSEDING MIL-S-19500/413B 24 March 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER


    Original     		PDF MIL-PRF-19500/413C MIL-S-19500/413B 2N3771 2N3772, MIL-PRF-19500. diode cc 3053 cc 3053 2n3771 equivalent cc 3053 diode 2N3771 equivalent transistor 2n3772 EQUIVALENT 2N3772 K 3053 TRANSISTOR MIL-PRF19500

    BUF620

    Abstract: No abstract text available
    Text: BUF620 Vishay Telefunken Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature


    Original     		PDF BUF620 D-74025 BUF620

    IC 9122

    Abstract: BUF620 2a1100 s295
    Text: BUF620 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planarpassivation 100 kHz switching rate Very low switching losses Very low dynamic saturation


    Original     		PDF BUF620 1995substances. D-74025 IC 9122 BUF620 2a1100 s295

    tt 2206 horizontal

    Abstract: ticomel transformer tt 2206 info OMF125 7414 transistor de audio fp 1016 datasheet T3j horizontal transistor tt 2206 250V 595 BC 0712 fsm 6045
    Text: SCHURTER develops, munufactures and markets components for the electronics industries worlwide. SCHURTER INC 447 Aviation Blvd Santa Rosa, CA 95403 Tel: +1 +707 636 3000 Fax: +1 +707 636 3033 [email protected] www.schurterinc.com the schurter Range at a Glance


    Original     		PDF

    C48U

    Abstract: S16884 2N6286 2N6287 3041 v transistor equivalent 2N6287 C-48U
    Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 22 September 2009. INCH POUND MIL-PRF-19500/505E 22 July 2009 SUPERSEDING MIL-PRF-19500/505D 10 January 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER,


    Original     		PDF MIL-PRF-19500/505E MIL-PRF-19500/505D 2N6286 2N6287, MIL-PRF-19500. C48U S16884 2N6287 3041 v transistor equivalent 2N6287 C-48U

    2n6284 equivalent

    Abstract: S16884 2N6283 2N6284
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 February 2009. MIL-PRF-19500/504E 18 November 2008 SUPERSEDING MIL-PRF-19500/504D 29 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER,


    Original     		PDF MIL-PRF-19500/504E MIL-PRF-19500/504D 2N6283 2N6284, MIL-PRF-19500. 2n6284 equivalent S16884 2N6284

    2N5683 equivalent

    Abstract: 2N5684 MARKING BB1 PNP MARKING BB1 2N5683 MIL-PRF19500 ck50 case ck50 2N5684 JANTX
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 June 2007. MIL-PRF-19500/466C 13 March 2007 SUPERSEDING MIL-PRF-19500/466B 19 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER,


    Original     		PDF MIL-PRF-19500/466C MIL-PRF-19500/466B 2N5683 2N5684, MIL-PRF-19500. 2N5683 equivalent 2N5684 MARKING BB1 PNP MARKING BB1 MIL-PRF19500 ck50 case ck50 2N5684 JANTX