MGFC47B3436
Abstract: MGFC47B
Text: < C band internally matched power GaAs FET > MGFC47B3436 3.4 – 3.6 GHz BAND / 50W DESCRIPTION The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC47B3436
MGFC47B3436B
37dBm
10ohm
MGFC47B3436
MGFC47B
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC47B3436 3.4 – 3.6 GHz BAND / 50W DESCRIPTION The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic
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Original
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MGFC47B3436
MGFC47B3436B
37dBm
10ohm
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CR10
Abstract: MGFC47B3436B GaAs FET 15A
Text: PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> Notice: This is not a final specification. Some parametric limits are subject to change. MGFC47B3436B 3.4 - 3.6GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC47B3436B is an internally impedance-matched
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MGFC47B3436B
MGFC47B3436B
37dBm
CR10
GaAs FET 15A
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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