Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MG75J1Z Search Results

    SF Impression Pixel

    MG75J1Z Price and Stock

    Toshiba America Electronic Components MG75J1ZS50

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MG75J1ZS50 56
    • 1 $63
    • 10 $63
    • 100 $50.4
    • 1000 $50.4
    • 10000 $50.4
    		Buy Now
    MG75J1ZS50 20
    • 1 $34.125
    • 10 $34.125
    • 100 $32.8125
    • 1000 $32.8125
    • 10000 $32.8125
    		Buy Now

    MG75J1Z Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG75J1ZS40 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG75J1ZS50 Toshiba N channel IGBT Original PDF
    MG75J1ZS50 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF
    MG75J1ZS50 Toshiba GTR Module Silicon N Channel IGBT Scan PDF

    MG75J1Z Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG75J1ZS50

    Abstract: No abstract text available
    Text: MG75J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original     		PDF MG75J1ZS50 2-94D2A MG75J1ZS50

    diode 083

    Abstract: MG75J1ZS40
    Text: MG75J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS40 Unit: mm High Power Switching Applications Motor Control Applications High input impedance High speed : tf = 0.35µs Max trr = 0.15µs (Max) Low saturation voltage : VCE (sat) = 3.5V (Max) Enhancement-mode


    Original     		PDF MG75J1ZS40 2-94D2A diode 083 MG75J1ZS40

    Untitled

    Abstract: No abstract text available
    Text: MG75J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS50 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode


    Original     		PDF MG75J1ZS50 2-94D2A

    MG75J1ZS50

    Abstract: No abstract text available
    Text: MG75J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original     		PDF MG75J1ZS50 2-94D2A MG75J1ZS50

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    mg75n2ys40

    Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
    Text: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種


    Original     		PDF 02BZ2 1S2092 1SZ5759 02CZ2 1S2094 2N3055 02CZ5 1S2095A 2N3713 02Z24A1M mg75n2ys40 MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A

    GT30J322

    Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
    Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬


    Original     		PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A

    MG75J1ZS50

    Abstract: ZS50 MG75J1Z 4A05 diode
    Text: TOSHIBA MG75J1ZS50 MG75J1 ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG75J1ZS50 MG75J1 2-94D2A 100a/Â MG75J1ZS50 ZS50 MG75J1Z 4A05 diode

    Untitled

    Abstract: No abstract text available
    Text: MG75J1ZS40 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Mr;7SM7<;An • v ■ 'w m wmr v ■ v ■ w Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : tf=0.35^/s Max. trr = 0.15^8 (Max.)


    OCR Scan     		PDF MG75J1ZS40

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MG75J1ZS50 MG75J1 ZS50 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT H IG H P O W E R SW IT C H IN G APPLICATIO N S. M O T O R C O N T R O L APPLIC ATIO N S. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One


    OCR Scan     		PDF MG75J1ZS50 MG75J1

    MG75J1ZS40

    Abstract: ZS40
    Text: TOSHIBA MG75J1ZS40 MG75J1 ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf= 0.35,«s Max. trr = 0.15/^ (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG75J1ZS40 MG75J1 2-94D2A MG75J1ZS40 ZS40

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG75J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75J1 ZS50 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. 2-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One


    OCR Scan     		PDF MG75J1ZS50 MG75J1 30/iS 2-94D2A

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG75J1ZS40 MG75J1 ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf= 0.35/«s Max. trr = 0.15/^s (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG75J1ZS40 MG75J1

    Untitled

    Abstract: No abstract text available
    Text: MG75J1ZS40 TO SHIBA M G 7 5 J 1 ZS 4 0 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT HIGH PO W ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • U nit in mm 2 -F A S T -O N -T A B #110 • High Input Impedance High Speed : tf=0.35/<s Max.


    OCR Scan     		PDF MG75J1ZS40 2-94D2A

    PTS100

    Abstract: No abstract text available
    Text: TOSHIBA MG75J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One Package. Enhancement-Mode High Speed : tf= 0 ,3 0 ^ s MAX. Gc = 75A)


    OCR Scan     		PDF MG75J1ZS50 961001EAA2 100/JS* --18ii PTS100

    Untitled

    Abstract: No abstract text available
    Text: MG75J1ZS50 — H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • The Electrodes are Isolated from Case. High Inpul Impedance Enhancement-M ode High Speed : tf= 0.30/js MAX. (I q = 75A)


    OCR Scan     		PDF MG75J1ZS50 30/js MG75J1ZS50

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG75J1ZS40 MG75J1 ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf= 0.35/«s Max. trr = 0.15/^s (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG75J1ZS40 MG75J1 2-94D2A

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


    OCR Scan     		PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9

    MG40001US41

    Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
    Text: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50


    OCR Scan     		PDF MG400J1US51 MG800J1US51 MG300J1US51 MG40J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG400J2VS50 MG2SJ6ES40 MG40001US41 MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50

    GT80J101

    Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
    Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412


    OCR Scan     		PDF GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


    OCR Scan     		PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js

    MG150N2YS40

    Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40
    Text: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* GT15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11


    OCR Scan     		PDF T8J101* T8J102 T15J101* T15J102* GT15J103 T25J101* MG25J1BS11 T50J101* T60J101* 80J101* MG150N2YS40 MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40