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Powerex Power Semiconductors MG300Q2YS60A IGBT MOD 1200V 300A 2800W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MG300Q2YS60A	Bulk			1	1 $195.28 10 $195.28 100 $195.28 1000 $195.28 10000 $195.28	Buy Now
Toshiba America Electronic Components MG300Q1US42
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	MG300Q1US42		175		1	1 $120 10 $110.76 100 $98.4 1000 $98.4 10000 $98.4	Buy Now
Quest Components	MG300Q1US42		140			1 $130 10 $130 100 $105 1000 $105 10000 $105	Buy Now
Toshiba America Electronic Components MG300Q1US41 300A, 1200V, N-CHANNEL IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	MG300Q1US41		1			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components MG300Q2YS50 Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	MG300Q2YS50		5			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MG300Q Datasheets (35)

Part	Manufacturer	Description	Datasheet Type	PDF
MG300Q1UK1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG300Q1UK1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG300Q1UK1	Unknown	Power and Industrial Semiconductors Data Book	Scan	PDF
MG300Q1UK1	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
MG300Q1UK1	Westcode Semiconductors	NPN transistor for high power switching and notor control applications, 1200V, 300A	Scan	PDF
MG300Q1US1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG300Q1US1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG300Q1US11	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG300Q1US11	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG300Q1US11	Toshiba	V(ces): 1200V V(ges): ±20V 2000W insulated gate bipolar transistor. For high power switching and motor control applications	Scan	PDF
MG300Q1US2	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG300Q1US2	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG300Q1US21	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG300Q1US21	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF

MG300Q1US41	Toshiba	TRANS IGBT MODULE N-CH 1200V 300A 4(2-109A4A)	Original	PDF
MG300Q1US41	Toshiba	Silicon N-channel IGBT GTR module for high power switching, motor control applications	Original	PDF
MG300Q1US41	Toshiba	GTR Module Silicon N Channel IGBT	Scan	PDF
MG300Q1US41	Toshiba	GTR Module - Silicon N-Channel IGBT	Scan	PDF
MG300Q1US41(AC:G)	Toshiba	TRANS IGBT MODULE N-CH 1200V 300A 4(2-109A4A)	Original	PDF
MG300Q1US51	Toshiba	TRANS IGBT MODULE N-CH 1200V 400A 4(2-109F1A)	Original	PDF

MG300Q Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MG300Q1US41 Abstract: No abstract text available Text: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE(sat) = 4.0V (Max.)	Original	MG300Q1US41 2-109A4A MG300Q1US41	PDF
Untitled Abstract: No abstract text available Text: MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode	Original	MG300Q2YS50 2-109C1A	PDF
MG300Q2YS61 Abstract: toshiba G2 MG300Q2YS Text: MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications • High input impedance · High speed: tf = 0.3 µs max Unit: mm Inductive load · Low saturation voltage: VCE (sat) = 2.6 V (max)	Original	MG300Q2YS61 2-109C4A MG300Q2YS61 toshiba G2 MG300Q2YS	PDF
MG300Q2YS61 Abstract: MG300Q2YS Text: MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications • High input impedance • High speed: tf = 0.3 µs max Unit: mm Inductive load • Low saturation voltage: VCE (sat) = 2.6 V (max)	Original	MG300Q2YS61 2-109C4A MG300Q2YS61 MG300Q2YS	PDF
MG300Q2YS65H Abstract: No abstract text available Text: MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2	Original	MG300Q2YS65H 2-109C4A MG300Q2YS65H	PDF
MG300Q2YS60A Abstract: No abstract text available Text: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)	Original	MG300Q2YS60A MG300Q2YS60A 200V/300A 2-123C1B	PDF
Untitled Abstract: No abstract text available Text: MG300Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)	Original	MG300Q1US51 2-109F1A	PDF
Untitled Abstract: No abstract text available Text: MG300Q2YS60A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 300 Amperes/1200 Volts A D L J K W N M V E2 C1 C H B DETAIL "A" F E C2E1 U W R R T S Z Q P Y X X Q G C1 7 5 5 6 AA	Original	MG300Q2YS60A Amperes/1200	PDF
Untitled Abstract: No abstract text available Text: MG300Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS60A 1200V/300A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)	Original	MG300Q2YS60A MG300Q2YS60A 200V/300A 2-123C1B	PDF
300Q1US41 Abstract: No abstract text available Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V	OCR Scan	MG300Q1US41 00A/ius 300Q1US41	PDF
Tag 676 800 Abstract: No abstract text available Text: TOSHIBA MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300 2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • H ig h I n p u t Im p ed an ce • H ig h S p eed : t f = 0 .3 / / s M ax. •In d u c tiv e L oad •	OCR Scan	MG300Q2YS50 MG300 2YS50 Tag 676 800	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed EQUIVALENT CIRCUIT : tf = 0.5^s Max. trr = 0.5,«s (Max.) V cE (sat) = 4.0V (Max.)	OCR Scan	MG300Q2YS40 2-109D2A 00A//iS TjS125	PDF
MG300Q2YS50 Abstract: 300AT Text: TOSHIBA MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2 YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage	OCR Scan	MG300Q2YS50 300Q2Y MG300Q2YS50 300AT	PDF
MG300Q1US51 Abstract: MG300Q1 Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3^s Max. @Induetive Load Low Saturation Voltage : VCE (Sat) =3.6V (Max.)	OCR Scan	MG300Q1US51 MG300Q1 2-109F1A MG300Q1US51	PDF

Untitled Abstract: No abstract text available Text: TOSHIBA MG300Q1US51 TO SH IBA GTR M O D U L E M G 3 SILICON N C H A N N EL IGBT Q 1 U S 5 1 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H ig h sp eed : tf= 0 .3 /Æ Max. Inductive Load Low Saturation Voltage	OCR Scan	MG300Q1US51 1256C VCE25i	PDF
mg30 Abstract: MG300Q1US51 P channel 600v 300a IGBT Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)	OCR Scan	MG300Q1US51 MG300Q1 2-109F1A mg30 MG300Q1US51 P channel 600v 300a IGBT	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .3 /«s Max. Inductive Load • Low Saturation Voltage	OCR Scan	MG300Q2YS50 961001EAA1	PDF
Untitled Abstract: No abstract text available Text: TO TOSHIBA {DISCRETE/OPTO} DE I SOTTESO DOItiID ? \| 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D T “3 3 - 3 S 90D 16110 SEM ICO N DU CTO R TOSHIBA GTR MODULE MG300Q1UK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE HIGH POWER SWITCHING APPLICATIONS.	OCR Scan	MG300Q1UK1	PDF
MG25M1BK1 Abstract: MG30M1BN1 MG200M1FK1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100 Text: Bipolar Darlington 2 Connection Vceo(SUS) (V) 10 15 20 BK 25 Maximum Rating M A) 50 MG25M1BK1 MG50M1BK1 75 100 150 200 300 MG75M1BK1 1000 MG30M1BN1 (SINGLE) FK MG200M1FK1 MG300M1FK1 1000 MG200M1UK1 MG300M1UK1 1200 MG200Q1UK1 MG300Q1UK1 MG300M1UK2 UK 1400	OCR Scan	MG30M1BN1 MG50M1BK1 MG75M1BK1 MG25M1BK1 MG200M1FK1 MG200M1UK1 MG300M1FK1 MG300M1UK1 MG300M1UK2 MG25M2CK2 MG25M1BK1 MG30M1BN1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTRO L APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. Inductive Load • Low Saturation Voltage	OCR Scan	MG300Q2YS50 961001EAA1	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G300Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)	OCR Scan	MG300Q1US51 G300Q TjS125	PDF
jSw Diode Abstract: No abstract text available Text: T O SH IB A MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage	OCR Scan	MG300Q2YS50 961001EAA1 jSw Diode	PDF
MG300Q1US11 Abstract: GE-540 GE-54 221D Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG300Q1US11 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input im pedance • High speed: tf = 1 .O^s Max. • Low saturation voltage: = 0 .5 n s (Max.)	OCR Scan	MG300Q1US11 TDT72SD PW03960796 MG300Q1US11 GE-540 GE-54 221D	PDF
MG300Q1US41 Abstract: S60C Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MO DULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US 4 1 HIGH POWER SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5/^s (Max.) Low Saturation Voltage : V c E (sa t) = 4.0V	OCR Scan	MG300Q1US41 2-109A4A MG300Q1US41 S60C	PDF

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MG300Q Search Results

MG300Q Price and Stock

Powerex Power Semiconductors MG300Q2YS60A

Toshiba America Electronic Components MG300Q1US42

Toshiba America Electronic Components MG300Q1US41

Toshiba America Electronic Components MG300Q2YS50

MG300Q Datasheets (35)

MG300Q Datasheets Context Search

MG300Q1US41

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MG300Q2YS61

MG300Q2YS61

MG300Q2YS65H

MG300Q2YS60A

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300Q1US41

Tag 676 800

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MG300Q2YS50

MG300Q1US51

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mg30

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MG25M1BK1

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jSw Diode

MG300Q1US11

MG300Q1US41