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    MEDIUM POWER SWITCHING TRANSISTORS Search Results

    MEDIUM POWER SWITCHING TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    MEDIUM POWER SWITCHING TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Medium Power Bipolar Transistors

    Abstract: 2N5320 2N5322
    Text: 2N5320, 2N5322 Series Medium Power Bipolar Transistors Features: • High performance, low frequency devices typically with current ratings 1A. Up to 1W power dissipation. • Silicon power switching transistors. • Medium power amplifier and switching applications.


    Original     		PDF 2N5320, 2N5322 Medium Power Bipolar Transistors 2N5320

    2N5322 2N5320

    Abstract: 2N5320 2N5322 2N532
    Text: 2N5320 & 2N5322 Medium Power Transistors Features: • High performance, low frequency devices typically with current ratings 2A. Up to 1W power dissipation. • Silicon Power Switching Transistors. • Medium Power Amplifier and Switching Applications. 2N5320 NPN


    Original     		PDF 2N5320 2N5322 2N5320 2N5322 2N5322 2N5320 2N532

    Untitled

    Abstract: No abstract text available
    Text: PNP Medium Power Transistor Pin Configuration 1. Emitter 2. Base 3. Collector Features: • PNP Silicon Power Switching Transistors • Medium Power Amplifier and Switching Applications Absolute Maximum Ratings: Ta = 25°C unless otherwise specified


    Original     		PDF BC160-16 BC161-16 element14

    TBD438

    Abstract: BD433 TBD436 TBD437 434 NPN transistors
    Text: BD433, 434, 435, 436, 437, 438 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum


    Original     		PDF BD433, O-126 O-126 TBD433 TBD434 TBD438 BD433 TBD436 TBD437 434 NPN transistors

    bc140

    Abstract: BC141 BC140-6 BC140 equivalent BC141 equivalent BC140-10 BC140-16 BC141-10 BC141-16 BC141-6
    Text: BC140, 141 NPN Medium Power Transistors Features: • NPN Silicon Power Switching Transistors. • Medium Power Amplifier and Switching Applications. TO-39 Metal Can Package Dimension Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88


    Original     		PDF BC140, BC140 BC141 bc140 BC141 BC140-6 BC140 equivalent BC141 equivalent BC140-10 BC140-16 BC141-10 BC141-16 BC141-6

    Power Transistors TO-126 Case

    Abstract: BD438 7333 A 9016 g farnell
    Text: BD438 Medium Power Transistors General Purpose TO-126 Features: • PNP Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C


    Original     		PDF BD438 O-126 O-126 Power Transistors TO-126 Case BD438 7333 A 9016 g farnell

    7333 A

    Abstract: Power Transistors TO-126 Case farnell ic 901 BD437
    Text: BD437 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C


    Original     		PDF BD437 O-126 O-126 7333 A Power Transistors TO-126 Case farnell ic 901 BD437

    BC160

    Abstract: BC160-10 BC160-6 BC161-6 BC160-16 BC161 BC161-10 BC161-16
    Text: BC160, 161 PNP Medium Power Transistors Features: • PNP Silicon Power Switching Transistors. • Medium Power Amplifier and Switching Applications. TO-39 Metal Can Package Dimension Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88


    Original     		PDF BC160, BC160 BC161 BC160 BC160-10 BC160-6 BC161-6 BC160-16 BC161 BC161-10 BC161-16

    BD239

    Abstract: d667 BD240 bd240b bd239c bd239b BD240A bd240c BD239A bd239c Transistor
    Text: NPN BD239, A, B, C, PNP BD240, A, B, C, MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS. The BD239, A, B, C are the NPN. The BD240, A, B, C are the PNP. They are the silicon epitaxial-base Power Transistors for use in medium power linear and switching applications.


    Original     		PDF BD239, BD240, BD239/BD240 BD239A/BD240A BD239B/BD240B BD239C/BD240C BD239 d667 BD240 bd240b bd239c bd239b BD240A bd240c BD239A bd239c Transistor

    Untitled

    Abstract: No abstract text available
    Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 


    Original     		PDF BCP5316Q OT223 -500mV BCP5616Q DS36980

    Untitled

    Abstract: No abstract text available
    Text: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 


    Original     		PDF BCP5616Q OT223 500mV BCP5316Q DS36981

    2N6045G

    Abstract: 2N6040 2N6042 2N6045 2N6040G 2N6041 2N6043 2N6044 transistor marking T2
    Text: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching


    Original     		PDF 2N6040, 2N6042, 2N6043, 2N6045 2N6043 2N6045 2N6043 2N6045G 2N6040 2N6042 2N6040G 2N6041 2N6044 transistor marking T2

    2N6040

    Abstract: 2N6045G 2N6043G 2N6040G 2N6042 2N6045 2N6042G 2N6041 2N6043 2N6044
    Text: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching


    Original     		PDF 2N6040, 2N6042, 2N6043, 2N6045 2N6043 2N6045 2N6043 2N6040 2N6045G 2N6043G 2N6040G 2N6042 2N6042G 2N6041 2N6044

    Untitled

    Abstract: No abstract text available
    Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •


    Original     		PDF BCP5316Q OT223 -500mV BCP5616Q DS36980

    8805 VOLTAGE REGULATOR

    Abstract: MJE350 b c e MJE350 pnp mje350
    Text: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package


    Original     		PDF MJE350 O-126 8805 VOLTAGE REGULATOR MJE350 b c e MJE350 pnp mje350

    bd439g

    Abstract: No abstract text available
    Text: BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON


    Original     		PDF BD435G, BD437G, BD439G, BD441G BD438 BD442 BD435G BD437G BD439G

    BD435

    Abstract: BD441
    Text: BD435, BD437, BD439, BD441 Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON


    Original     		PDF BD435, BD437, BD439, BD441 BD438 BD442 BD435 BD437 BD439 BD435 BD441

    Untitled

    Abstract: No abstract text available
    Text: BD435G, BD437G, BD439G, BD441G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Features http://onsemi.com 4.0 AMPERES POWER TRANSISTORS NPN SILICON


    Original     		PDF BD435G, BD437G, BD439G, BD441G BD438 BD442 BD435G BD437G BD439G

    bd237 equivalent

    Abstract: BD237
    Text: BD237 Medium Power Transistors Features: • Epitaxial Silicon Power Transistors. • Intended for Use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical


    Original     		PDF BD237 O-126 bd237 equivalent BD237

    BD238

    Abstract: No abstract text available
    Text: BD238 Medium Power Transistors Features: • Epitaxial Silicon Power Transistors. • Intended for Use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical


    Original     		PDF BD238 O-126 BD238

    transistor 9016 npn

    Abstract: farnell IC 358 BD179
    Text: BD179 Medium Power Transistors Features: • Epitaxial Silicon Power Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical


    Original     		PDF BD179 O-126 transistor 9016 npn farnell IC 358 BD179

    C 5022

    Abstract: farnell BD179 BD180
    Text: BD180 Medium Power Transistors Features: • Epitaxial Silicon Power Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical


    Original     		PDF BD180 O-126 C 5022 farnell BD179 BD180

    2n2222 2n5401 2n5551

    Abstract: bc107 sot23 bd139 sot23 PHILIPS 2n2222a SOT23 2N3904 sot323 BC108 SOT23 package 2N2369A SOT363 BCY59 cross reference BC108 CROSS REFERENCE BC109 cross reference
    Text: CONVERSION LIST Page General purpose low power 62 Darlingtons 63 Medium power/power 64 Medium frequency 64 Switching 65 High voltage 65 Resistor equipped RETs 66 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE


    OCR Scan     		PDF SC04/CATEGORY SC-59 OT143 OT323 OT363 SC-75 OT223 BC-107 BC108 BC109 2n2222 2n5401 2n5551 bc107 sot23 bd139 sot23 PHILIPS 2n2222a SOT23 2N3904 sot323 BC108 SOT23 package 2N2369A SOT363 BCY59 cross reference BC108 CROSS REFERENCE BC109 cross reference

    Untitled

    Abstract: No abstract text available
    Text: r ^ : 7 S C S T H O M 7# S O N BD 4 3 4 / 6 /8 MEDIUM POWER LINEAR AND SWITCHING APPLICATION DESCRIPTIO N The BD433, BD435 and BD437 are silicon epitaxialbase NPN power transistors in Jedec TO -126 plas tic package, intended for use in medium power li­ near and switching applications.


    OCR Scan     		PDF BD433, BD435 BD437 BD433 BD434, BD436 BD438 BD434