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    MDS110 Price and Stock

    Microchip Technology Inc MDS1100

    RF TRANS NPN 65V 1.03GHZ 55TU-1
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    DigiKey MDS1100 Bulk 25
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    • 100 $768.5876
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    • 10000 $768.5876
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    Microchip Technology Inc MDS1100 134 28 Weeks
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    Avnet Silica MDS1100 54 Weeks 25
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    EBV Elektronik MDS1100 13 Weeks 25
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    MDS110 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MDS1100 Advanced Power Technology RF Power Transistors: AVIONICS Original PDF
    MDS1100 Microsemi a high power COMMON BASE bipolar transistor. Original PDF

    MDS110 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mds1660

    Abstract: 50X50 MDS12 MDS110
    Text: Formosa MS SMD Schottky Bridge Rectifier MDS12 THRU MDS110 List List. 1 Package outline. 2


    Original     		PDF MDS12 MDS110 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. mds1660 50X50 MDS110

    MDS1100

    Abstract: J162 transistor j237
    Text: MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization


    Original     		PDF MDS1100 55TU-1 MDS1100 J162 transistor j237

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Low VF Schottky Bridge Rectifier MDS12L THRU MDS110L List List. 1 Package outline. 2


    Original     		PDF MDS12L MDS110L MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs.

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Low VF Schottky Bridge Rectifier MDS12L THRU MDS110L List List. 1 Package outline. 2


    Original     		PDF MDS12L MDS110L MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs.

    Untitled

    Abstract: No abstract text available
    Text: MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization


    Original     		PDF MDS1100 55TU-1 MDS1100

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Schottky Bridge Rectifier MDS12L THRU MDS110L List List. 1 Package outline. 2


    Original     		PDF MDS12L MDS110L MIL-STD-750D METHOD-1051 1000hrs. METHOD-1021 METHOD-1031

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Schottky Bridge Rectifier MDS12 THRU MDS110 List List. 1 Package outline. 2


    Original     		PDF MDS12 MDS110 MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1038

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Schottky Bridge Rectifier MDS12 THRU MDS110 List List. 1 Package outline. 2


    Original     		PDF MDS12 MDS110 MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs.

    MDS110L

    Abstract: TO-269AA SCHOTTKY BARRIER BRIDGE RECTIFIERS MDS14L for bridge rectifier MDS12L MDS12 MDS16L
    Text: Formosa MS SMD Schottky Bridge Rectifier MDS12L THRU MDS110L List List. 1 Package outline. 2


    Original     		PDF MDS12L MDS110L MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. MDS110L TO-269AA SCHOTTKY BARRIER BRIDGE RECTIFIERS MDS14L for bridge rectifier MDS12 MDS16L

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Schottky Bridge Rectifier MDS12 THRU MDS110 List List. 1 Package outline. 2


    Original     		PDF MDS12 MDS110 MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs.

    1030 mhz

    Abstract: MDS1100 1030 PULSED
    Text: MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization


    Original     		PDF MDS1100 55TU-1 MDS1100 1030 mhz 1030 PULSED

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD Schottky Bridge Rectifier MDS12 THRU MDS110 List List. 1 Package outline. 2


    Original     		PDF MDS12 MDS110 MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1021

    transistor j237

    Abstract: MDS1100
    Text: MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization


    Original     		PDF MDS1100 MDS1100 55TU-1 transistor j237

    Untitled

    Abstract: No abstract text available
    Text: MDS110 Naina Semiconductor Ltd. Three Phase Bridge Rectifier, 110 Amps Features • • • Easy connections Excellent power volume ratio Insulated type MDS Voltage Ratings TJ = 25oC unless otherwise noted Type number Voltage code MDS110 80 100 120 140 160


    Original     		PDF MDS110

    TO269AA

    Abstract: MARKING CODE SMD BH
    Text: COMCHIP Low VF Schottky Bridge Rectifiers SMD Diodes Specialist CDBHD120L-G Thru. CDBHD1100L-G Reverse Voltage: 20 to 100 Volts Forward Current: 1.0 Amp RoHS Device Features • Low Vf Schottky barrier chips in bridge Mini DIP/To-269AA • Metal-Semiconductor junction with guard ring


    Original     		PDF CDBHD120L-G CDBHD1100L-G DIP/To-269AA O-269AA) QW-BL009 CDBHD120L-G MDS12L CDBHD140L-G MDS14L CDBHD160L-G TO269AA MARKING CODE SMD BH

    MDS110L

    Abstract: BRIDGE RECTIFIER SMD SCHOTTKY BARRIER BRIDGE RECTIFIERS
    Text: Formosa MS SMD Schottky Bridge Rectifier MDLS12L THRU MDLS110L List List. 1 Package outline. 2


    Original     		PDF MDLS12L MDLS110L MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs. MDS110L BRIDGE RECTIFIER SMD SCHOTTKY BARRIER BRIDGE RECTIFIERS

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Low VF Schottky Bridge Rectifiers CDBHD120L-G Thru. CDBHD1100L-G Reverse Voltage: 20 to 100 Volts Forward Current: 1.0 Amp RoHS Device Features Mini DIP/To-269AA - Low Vf Schottky barrier chips in bridge - Metal-Semiconductor junction with guard ring .106 2.7


    Original     		PDF CDBHD120L-G CDBHD1100L-G DIP/To-269AA O-269AA) 724MAX QW-BL009 CDBHD120L-G MDS12L CDBHD140L-G MDS14L

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    Untitled

    Abstract: No abstract text available
    Text: Low VF Schottky Bridge Rectifiers CDBHD120L-G Thru. CDBHD1100L-G Reverse Voltage: 20 to 100 Volts Forward Current: 1.0 Amp RoHS Device Features TO-269AA - Low Vf Schottky barrier chips in bridge - Metal-Semiconductor junction with guard ring ~ - High surge current capability


    Original     		PDF CDBHD120L-G CDBHD1100L-G O-269AA O-269AA) UL94-V0 724MAX QW-BL009 CDBHD120L-G MDS12L CDBHD140L-G