mcl-25 rf
Abstract: DC10 NN12 P35-4234-000-200
Text: P35-4234-000-200 GaAs MMIC SP4T REFLECTIVE SWITCH, DC - 20GHz Features • Ultra Broadband • Low insertion loss 3.0dB typ at 18GHz • • Fast switching speed High isolation 38dB at 18GHz • Through GaAs Vias for improved performance Description The P35-4234-000-200 is a high performance broadband Gallium Arsenide monolithic single pole four
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P35-4234-000-200
20GHz
18GHz
P35-4234-000-200
462/SM/01576/200
mcl-25 rf
DC10
NN12
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Transformer MCL 013
Abstract: No abstract text available
Text: Surface Mount ADTT1-6+ ADTT1-6 RF Transformer .015 to 100 MHz Maximum Ratings Operating Temperature Storage Temperature RF Power Features -20°C to 85°C -55°C to 100°C 0.25W Pin Connections PORT PRIMARY DOT PRIMARY PRIMARY CT SECONDARY DOT SECONDARY SECONDARY CT
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CD637
2002/95/EC)
TB-42
M98898
ED-7828/2
Transformer MCL 013
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Gali-S66
Abstract: Gali-52 Gali-55 ADCH-80A rf choke AN-60-015 Gali-51F Gali-4F GALI-5 m1124
Text: Gali-SXF Kit Test Board: Instructions for Use for testing all kit “K2-Gali”models, plus Gali-52 and Gali-S66 (AN-60-015) Introduction Gali Models are a series of wide band amplifiers. They have different device voltages and currents (refer to catalog spec). The test board has
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Gali-52
Gali-S66)
AN-60-015)
Gali-S66
ADCH-80A
Gali-52
Gali-51F
Gali-55
Gali-S66
Gali-55
ADCH-80A
rf choke
AN-60-015
Gali-51F
Gali-4F
GALI-5
m1124
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NN12
Abstract: P35-4229-000-200
Text: P35-4229-000-200 GaAs MMIC SPDT REFLECTIVE SWITCH, DC - 20GHz Features • Ultra Broadband • Low insertion loss 2.0dB typ at 18GHz • • Fast switching speed High isolation 45dB at 10GHz • Through GaAs Vias for improved performance Description The P35-4229-000-200 is a high performance Gallium Arsenide monolithic single pole double throw broadband RF
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P35-4229-000-200
20GHz
18GHz
10GHz
P35-4229-000-200
462/SM/01574/200
NN12
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84-1LMI
Abstract: NN12 P35-5104-000-200 MARCONI power MARCONI amplifier
Text: P35-5104-000-200 HEMT MMIC LOW NOISE AMPLIFIER, 2 - 20GHz Features • • • • • • Cascode Configuration 10 dB Gain Typical pHEMT technology AGC control with gate bias Less than 4.0 dB noise figure 2 - 18GHz Description The P35-5104-000-200 is a high performance low noise 2 - 20GHz Gallium Arsenide monolithic travelling wave
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P35-5104-000-200
20GHz
18GHz
P35-5104-000-200
20GHz
462/SM/01503/200
84-1LMI
NN12
MARCONI power
MARCONI amplifier
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NN12
Abstract: P35-4233-000-200 MARCONI RF power MARCONI power
Text: P35-4233-000-200 GaAs MMIC SP3T REFLECTIVE SWITCH, DC - 20GHz Features • Ultra Broadband • Low insertion loss 2.2dB typ at 18GHz • • Fast switching speed High isolation 55dB at 18GHz • Through GaAs Vias for improved performance Description The P35-4233-000-200 is a high performance broadband Gallium Arsenide monolithic single pole three
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P35-4233-000-200
20GHz
18GHz
P35-4233-000-200
462/SM/01575/200
NN12
MARCONI RF power
MARCONI power
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10ghz attenuator
Abstract: 4310 NN12 P35-4310-000-200 MARCONI power
Text: P35 P35-4310-000-200 SINGLE BIT ABSORPTIVE STEP ATTENUATOR, DC - 20GHz Features • • • • • Broadband DC - 20GHz Low insertion loss; 2.2dB typ at 10GHz Fast switching speed High isolation; typ 45dB at 10GHz Through GaAs vias for improved performance
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P35-4310-000-200
20GHz
10GHz
P35-4310-000-200
462/SM/01577/200
P35-4310-000-20
10ghz attenuator
4310
NN12
MARCONI power
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4235
Abstract: NN12 P35-4235-000-200
Text: P35-4235-000-200 GaAs MMIC SPST ABSORPTIVE SWITCH, DC - 20GHz Features • • • • • Broadband Low insertion loss 1.8dB typ at 18GHz Fast switching speed High isolation 50dB at 18GHz Through GaAs Vias for improved performance Description The P35-4235-000-200 is a high performance Gallium Arsenide monolithic single pole single throw broadband RF
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P35-4235-000-200
20GHz
18GHz
P35-4235-000-200
462/SM/01573/200
4235
NN12
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Untitled
Abstract: No abstract text available
Text: USB I/O CONTROL BOX USB-I/O-16D8R 8 form C relays and 16 digital I/O channels The Big Deal • USB HID device compatible with 32/64 Bit operating systems • 16 2 Bytes x 8 channels TTL/LVTTL digital I/O lines and 8 electromechanical Form C buffered relays
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USB-I/O-16D8R
LE1562
USB-I/O-16D8R
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B1260
Abstract: No abstract text available
Text: FREQUENCY MIXERS Plug-In ACTIVE, LOAD INSENSITIVE 10 to 500 MHz UNCL-X1MH UNCL-X1MH +13 dBm LO, up to +7 dBm RF FREQUENCY MHz MODEL NO. UNCL-X1MH LO/RF IF fL-fU 1-500 CONVERSION GAIN, dB Mid-Band _ m σ Min. x Total Range Min. 10-500 2.41 .015 0.5 LO-RF ISOLATION, dB
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UNCL-R1
Abstract: No abstract text available
Text: FREQUENCY MIXERS Plug-In ACTIVE, LOAD INSENSITIVE 10 to 500 MHz UNCL-X1MH UNCL-X1MH +13 dBm LO, up to +7 dBm RF FREQUENCY MHz MODEL NO. UNCL-X1MH LO/RF IF fL-fU 1-500 CONVERSION GAIN, dB Mid-Band _ m σ Min. x Total Range Min. 10-500 2.41 .015 0.5 LO-RF ISOLATION, dB
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KBA-20
Abstract: m8548 tb99 2748 KBA-40 "Frequency Doublers"
Text: Surface Mount Frequency Doublers KBA-20 • KBA-40 1.6 to 4.8 GHz Features • low conversion loss, 12 dB typ. • solder plated leads for strain relief and excellent solderability CASE STYLE: SM2 MODEL PRICE QTY KBA-20 $9.95 ea. 10-49 KBA-40 $14.95 ea. (1-9)
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KBA-20
KBA-40
10yout
PL-066)
KBA-40
TB-74
PL-067)
KBA-20
m8548
tb99
2748
"Frequency Doublers"
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Untitled
Abstract: No abstract text available
Text: FREQUENCY MIXERS Plug-In ACTIVE, LOAD INSENSITIVE 10 to 500 MHz UNCL-X1MH UNCL-X1MH +13 dBm LO, up to +7 dBm RF FREQUENCY MHz MODEL NO. UNCL-X1MH LO/RF IF fL-fU 1-500 CONVERSION GAIN, dB Mid-Band _ m σ Min. x Total Range Min. 10-500 2.41 .015 0.5 LO-RF ISOLATION, dB
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Untitled
Abstract: No abstract text available
Text: FREQUENCY MIXERS Plug-In ACTIVE, LOAD INSENSITIVE 10 to 500 MHz UNCL-X1MH UNCL-X1MH +13 dBm LO, up to +7 dBm RF FREQUENCY MHz MODEL NO. UNCL-X1MH LO/RF IF fL-fU 1-500 CONVERSION GAIN, dB Mid-Band _ m σ Min. x Total Range Min. 10-500 2.41 .015 0.5 LO-RF ISOLATION, dB
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Untitled
Abstract: No abstract text available
Text: High Power Bi-Directional Coupler BDCN-10-25+ 50Ω 10dB Coupling 824 to 2525 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Pin Connections INPUT 1 OUTPUT 4 COUPLED forward 6 COUPLED (reverse) 3 GROUND
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BDCN-10-25+
FV1206-1
2002/95/EC)
RO4350B
M107415
EDR-8041/2
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TC55YD1837YB-333
Abstract: daj 8P CQ245
Text: TOSHIBA TC55YD1837YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1837YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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TC55YD1837YB-333
288-WORD
36-BIT
TC55YD1837YB
368-bit
-602VOa-O
VBIHS01
daj 8P
CQ245
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 262,144-WORD BY 72-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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OCR Scan
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TC55YD1873YB-333
144-WORD
72-BIT
TC55YD1873YB
368-bit
C-BGA209-1422-1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC55YD1819YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 1,048,576-WORD BY 18-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1819YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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OCR Scan
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TC55YD1819YB-333
576-WORD
18-BIT
TC55YD1819YB
368-bit
C-BGA209-1422-1
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC55YD1837YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1837YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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OCR Scan
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TC55YD1837YB-333
288-WORD
36-BIT
TC55YD1837YB
368-bit
C-BGA209-1422-1
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55YD1837YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1837YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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OCR Scan
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TC55YD1837YB-333
288-WORD
36-BIT
TC55YD1837YB
368-bit
C-BGA209-1422-1
15lsl
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 262,144-WORD BY 72-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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OCR Scan
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TC55YD1873YB-333
144-WORD
72-BIT
TC55YD1873YB
368-bit
C-BGA209-1422-1
15lsl
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PDF
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TC55YD1819YB-333
Abstract: No abstract text available
Text: T O S H IB A TENTATIVE TC55YD1819YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 1,048,576-WORD BY 18-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1819YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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OCR Scan
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TC55YD1819YB-333
576-WORD
18-BIT
TC55YD1819YB
368-bit
C-BGA209-1422-1
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PDF
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qcb 4l
Abstract: No abstract text available
Text: TO SH IB A TENTATIVE TC55YD1837YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM DESCRIPTION SILICON GATE CMOS SigmaRAM, 21x1 Dp The TC55YD1837YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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OCR Scan
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TC55YD1837YB-333
288-WORD
36-BIT
TC55YD1837YB
368-bit
C-BGA209-1422-1
qcb 4l
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PDF
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Untitled
Abstract: No abstract text available
Text: F requency M ixers Active, Load Insensitive 10 to 5 0 0 MHz UNCL-Xl MH +13 dBm LO, up to +7 dBm RF FREQUENCY MHz MODEL NO. UNCL-Xl MH LO/RF IF V». 1-500 10-500 CONVERSION GAIN, dB Mid-Band m X o Min. 2.41 .015 0.5 LO-RF ISOLATION, dB Total Range Min0 LO-IF ISOLATION, dB
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