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    MCH185A150J Price and Stock

    ROHM Semiconductor MCH185A150JK

    CAP CER 15PF 50V C0G/NP0 0603
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    DigiKey MCH185A150JK Cut Tape 1
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    MCH185A150JK Reel 4,000
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    Bristol Electronics MCH185A150JK 17,274
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    Quest Components MCH185A150JK 12,800
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    MCH185A150JK 5,556
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    MCH185A150JK 3,200
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    ROHM CO LTD MCH185A150JK

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    Bristol Electronics MCH185A150JK 25,275
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    MCH185A150J Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MCH185A150JK ROHM Ceramic Capacitors, Capacitors, CAP CER 15PF 50V 5% NP0 0603 Original PDF

    MCH185A150J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MCH185C332K

    Abstract: MCH155F103Z mch184cn224k MCH153F104Z
    Text: Multi Layer Ceramic Chip Capacitors MCH15 Series 1005(0402 Size), MCH18 Series (1608(0603) Size) Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.


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    PDF MCH15 MCH18 MCH185C332K MCH155F103Z mch184cn224k MCH153F104Z

    MCR03J102

    Abstract: MCR03*J102 MCH185A150J MCR03*J102 resistor SGA-8343 CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z
    Text: AN RFMD APPLICATION NOTE SGA-8343 GPS Application Circuits RFMD Worldwide Applications Design Application Note - AN-061 Abstract RFMD’s SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575MHz). The first application circuit is optimized for noise performance; the second one is optimized for input return loss. Introduction The application circuits were


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    PDF SGA-8343 AN-061 1575MHz) MCR03J102 MCR03*J102 MCH185A150J MCR03*J102 resistor CL10B104KONC sga8343 samsung bluetooth sige an-061 sga8343z

    MCH315A180J

    Abstract: MCH215A221J MCH315A100D MCH185A220J MCH215A680J MCH155A270J MCH215A220J MCH185A100D MCH185A2R2C MCH215A471J
    Text: 1/2 C L A S S I C 0 G M U LT I L AY E R C E R A M I C C A PA C I T O R S MCH SERIES • CLASS I, TEMPERATURE COMPENSATED: C0G • CLASS II, HIGH DIELECTRIC CONSTANT: X7R & Y5V. Z5U ALSO AVAILABLE MCH SERIES SPECIFICATIONS Parameter Temperature range Temp. coefficients


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    PDF 30ppm/ with61J 560pF MCH315A681J 680pF MCH315A821J 820pF MCH315A102J MCH315A122J MCH315A152J MCH315A180J MCH215A221J MCH315A100D MCH185A220J MCH215A680J MCH155A270J MCH215A220J MCH185A100D MCH185A2R2C MCH215A471J

    SPF-3043

    Abstract: SPF-3143 SPF 188 AN066 3143 LL1608-FS3N9S LL1608-FS4N7S MCH182CN104KK MCH185A150JK ML200C
    Text: DESIGN APPLICATION NOTE - AN-066 SPF-3143 Amplifier Application Circuits Abstract This application note is intended to provide a reference point for an amplifier circuit design using Sirenza Microdevices’ SPF-3143 at 1960 MHz, in both dualbiased and self-biased configurations.


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    PDF AN-066 SPF-3143 MCH185A150JK MCH182CN104KK MCH185A8R2DK LL1608-FS5N6S SPF-3043 SPF 188 AN066 3143 LL1608-FS3N9S LL1608-FS4N7S MCH182CN104KK MCH185A150JK ML200C

    mch185cn153k

    Abstract: MCH184FN105Z MCH185A101J MCH155A221J MCH155F103Z MCH18 MCH185A150J MCH153F104Z MCH185A470J f103z
    Text: Multi Layer Ceramic Chip Capacitors MCH15 Series 1005(0402 Size), MCH18 Series (1608(0603) Size) Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.


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    PDF MCH15 MCH18 12please 4316B mch185cn153k MCH184FN105Z MCH185A101J MCH155A221J MCH155F103Z MCH185A150J MCH153F104Z MCH185A470J f103z

    SGA8343Z

    Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


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    PDF SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS100909 SGA8343Z-EVB4 1575MHz MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series

    Untitled

    Abstract: No abstract text available
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


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    PDF SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz

    MCH185A050c

    Abstract: MCH155A240J MCH185A101J MCH185CN153 MCH155A121J MCH155C471K MCH185A220J MCH185C472K MCH155A100D MCH185A330J
    Text: 積層セラミックチップコンデンサ/Multi Layer Ceramic Chip Capacitors MCH15 Series(1005 Size)MCH18 Series(1608 Size) はんだ喰われ防止に、効果的なバリア層に優れた はんだ付け性のコーティング処理を施した電極構造を採用。


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    PDF MCH15 MCH18 MCH15 1005size MCH18 1608size 110pF 4316D MCH185A050c MCH155A240J MCH185A101J MCH185CN153 MCH155A121J MCH155C471K MCH185A220J MCH185C472K MCH155A100D MCH185A330J

    MCH182F104ZK

    Abstract: MCH185A100JK MCH185A8R2CK 500 watt amplifier schematic
    Text: PRELIMINARY DATA SHEET EC2198 1.5 Watt Power Amplifier Cellular Band 3.5V POWER AMPLIFIER Description Features The EC2198 is a cellular band 820 to 960MHz MMIC power amplifier. It is fabricated with a highly reliable GaAs/InGaP HBT process technology. It operates from


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    PDF EC2198 960MHz) EC2198 900MHz 170mA EC2198-500 EC2198-1000 SS-000655-000 MCH182F104ZK MCH185A100JK MCH185A8R2CK 500 watt amplifier schematic

    MCR03*J102

    Abstract: CL10B104KONC MCR03*J102 resistor sige an-061 LL1608-FS39NJ SGA-8343 MCH185A2R2C AN-044
    Text: Design Application Note - AN-061 SGA-8343 GPS Application Circuits Abstract Sirenza Microdevices’ SGA-8343 is a high performance SiGe amplifier designed for operation from DC to 6 GHz. This application note illustrates application circuits for GPS Global Positioning System frequency band (1575 MHz). The first application circuit


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    PDF AN-061 SGA-8343 EAN-103201 MCR03*J102 CL10B104KONC MCR03*J102 resistor sige an-061 LL1608-FS39NJ MCH185A2R2C AN-044

    SHF-0289

    Abstract: MCH185CN102KK AN032 TMC1DB106KLRH AN-032 GaAs FET amplifer H H L C9 MCH185A390JK ML200C LL1608-FS4N7S
    Text: DESIGN APPLICATION NOTE - AN-032 SHF-0289 Amplifier Application Circuits Abstract Design Considerations and Trade-offs Sirenza Microdevices’ SHF-0289 is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET


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    PDF AN-032 SHF-0289 EAN-101799 MCH185CN102KK AN032 TMC1DB106KLRH AN-032 GaAs FET amplifer H H L C9 MCH185A390JK ML200C LL1608-FS4N7S

    CL10B104KONC

    Abstract: MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK SGA-9189 Sirenza amplifier SOT-89 ECB-102216-B AN-021
    Text: Design Application Note - AN021 SGA-9189 Amplifier Application Circuits Abstract Sirenza Microdevices’ SGA-9189 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. This application note illustrates several application circuits for key frequency bands in the


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    PDF AN021 SGA-9189 EAN-101534 CL10B104KONC MCR03J100 MCH185A4R7CK AN021 MCR03*J100 MCH185A390JK Sirenza amplifier SOT-89 ECB-102216-B AN-021

    SGA-8343Z

    Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


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    PDF SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110205 SGA8343Z-EVB4 1575MHz SGA-8343Z samsung cl SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343

    SGA8343z

    Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


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    PDF SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot

    samsung bluetooth

    Abstract: SGA8343Z SGA-8343 MCR03*J102 CL10B104KONC SGA-8343Z 8343
    Text: SGA-8343 Z SGA-8343(Z) Low Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to


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    PDF SGA-8343 OT-343 SGA8343ZPCK-EVB2 SGA8343ZPCK-EVB3 SGA8343ZPCK-EVB4 DS100111 samsung bluetooth SGA8343Z MCR03*J102 CL10B104KONC SGA-8343Z 8343

    MCH153FN104Z

    Abstract: MCH185CN472K MCH185FN102Z MCH185CN102K MCH185A101J MCH155FN472Z MCH185CN331K MCH155CN472K MCH185CN152K MCH185A820J
    Text: Multi Layer Ceramic Chip Capacitors MCH15 Series - 1005 0402 Size, MCH18 Series - 1608 (0603) Size Barrier layer and end terminations to improve solderability. These capacitors are suitable for flow and reflow soldering and can be used in various applications.


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    PDF MCH15 MCH18 4316E MCH153FN104Z MCH185CN472K MCH185FN102Z MCH185CN102K MCH185A101J MCH155FN472Z MCH185CN331K MCH155CN472K MCH185CN152K MCH185A820J