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    MBN500H65E2 Price and Stock

    Power Integrations 1SP0335D2S1-MBN500H65E2

    Gate Drivers ONLY for Hitachi MBN500H65E2 module
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    Mouser Electronics 1SP0335D2S1-MBN500H65E2
    • 1 $130.98
    • 10 $130.98
    • 100 $117.48
    • 1000 $117.48
    • 10000 $117.48
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    Power Integrations 1SP0335D2S1C-MBN500H65E2

    Gate Drivers Plug-and-Play Gate Driver, SCALE-2, slave, conformal coating
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SP0335D2S1C-MBN500H65E2
    • 1 -
    • 10 $205.59
    • 100 $184.4
    • 1000 $184.4
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    Power Integrations 1SP0335V2M1C-MBN500H65E2

    Gate Drivers Plug-and-Play Gate Driver, SCALE-2, master, fiber optic interface with versatile link, conformal coating
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    Mouser Electronics 1SP0335V2M1C-MBN500H65E2
    • 1 -
    • 10 $292.9
    • 100 $283.89
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    • 10000 $283.89
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    Power Integrations 1SP0335S2M1C-MBN500H65E2

    Gate Drivers Plug-and-Play Gate Driver, SCALE-2, master, fiber optic interface with ST, conformal coating
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SP0335S2M1C-MBN500H65E2
    • 1 -
    • 10 $363.85
    • 100 $352.66
    • 1000 $352.66
    • 10000 $352.66
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    Power Integrations 1SP0335V2M1-MBN500H65E2

    Gate Drivers ONLY for Hitachi MBN500H65E2 module
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1SP0335V2M1-MBN500H65E2
    • 1 -
    • 10 $218.3
    • 100 $211.59
    • 1000 $211.59
    • 10000 $211.59
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    MBN500H65E2 Datasheets Context Search

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    Hitachi DSA00281

    Abstract: 30s1200
    Text: IGBT MODULE Spec.No.IGBT-SP-09025 R2 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-09025 MBN500H65E2 000cycles) Hitachi DSA00281 30s1200

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09025 R3 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-09025 MBN500H65E2 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09025 R4 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-09025 MBN500H65E2 000cycles)

    G15BB

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-09025 R5 P1 MBN500H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		PDF IGBT-SP-09025 MBN500H65E2 000cycles) G15BB

    Untitled

    Abstract: No abstract text available
    Text: DIODE MODULE Spec.No.SR2-SP-09007 R4 MDM500H65E2 Preliminary Specification FEATURES  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.  Isolated heat sink terminal to base .


    Original     		PDF SR2-SP-09007 MDM500H65E2

    P4 diode

    Abstract: MBN500H65E2 p5 diode
    Text: DIODE MODULE Spec.No.SR2-SP-09007 R1 MDM500H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .


    Original     		PDF SR2-SP-09007 MDM500H65E2 P4 diode MBN500H65E2 p5 diode

    mbm150gr12

    Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
    Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics


    Original     		PDF MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt

    C2E1

    Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12
    Text: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 Ｃ：適合 Ｓ.Ｃ：適合 Ｎ：未対応 （但し適用除外項目物質を含有） 【ステータス】 Ｍ：量産品 Ｗ：ＷＳ


    Original     		PDF MBN1200E17D MBN1600E17D MBN1800E17D MBN1800E17DD MBN2400E17D MBN1200E17E 12-Fast-on KS10003 C2E1 MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12

    3AG1A

    Abstract: No abstract text available
    Text: DIODE MODULE Spec.No.SR2-SP-09007 R2 MDM500H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .


    Original     		PDF SR2-SP-09007 MDM500H65E2 3AG1A