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Power Integrations 1SP0635D2S1C-MBN1200E33D Gate Drivers ONLY for Hitachi MBN1200E33D conformal coated module
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Mouser Electronics	1SP0635D2S1C-MBN1200E33D					1 - 10 $202.1 100 $181.26 1000 $181.26 10000 $181.26	Get Quote
Power Integrations 1SP0635V2M1C-MBN1200E33D Gate Drivers ONLY for Hitachi MBN1200E33D conformal coated module
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Mouser Electronics	1SP0635V2M1C-MBN1200E33D					1 - 10 $402.07 100 $389.69 1000 $389.69 10000 $389.69	Get Quote
Power Integrations 1SP0635S2M1C-MBN1200E33D Gate Drivers ONLY for Hitachi MBN1200E33D conformal coated module
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Mouser Electronics	1SP0635S2M1C-MBN1200E33D					1 - 10 $500.29 100 $484.9 1000 $484.9 10000 $484.9	Get Quote
Power Integrations 1SP0635D2S1-MBN1200E33D Gate Drivers Gate Driver ONLY for Hitachi MBN1200E33D module
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0635D2S1-MBN1200E33D					1 - 10 $141.9 100 $127.27 1000 $127.27 10000 $127.27	Get Quote
Power Integrations 1SP0635V2M1-MBN1200E33D Gate Drivers ONLY for Hitachi MBN1200E33D module
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0635V2M1-MBN1200E33D					1 - 10 $327.46 100 $317.38 1000 $317.38 10000 $317.38	Get Quote

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MBN1200E33D Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MBN1200E33D		Hitachi Semiconductor	TRANS IGBT MODULE N-CH 3300V 1200A		Original	PDF

MBN1200E33D Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MBN1200E33D Abstract: Hitachi DSA0047 Text: Relation No.IGBT-SP-02005 R5 IGBT MODULE MBN1200E33D TENTATIVE SPECIFICATION Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.	Original	PDF	IGBT-SP-02005 MBN1200E33D 000cycles) MBN1200E33D Hitachi DSA0047
MBN1200E33D Abstract: ge 521 Text: IGBT MODULE Spec.No.IGBT-SP-02005 R8 P1/6 MBN1200E33D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.	Original	PDF	IGBT-SP-02005 MBN1200E33D 000cycles) MBN1200E33D ge 521
Untitled Abstract: No abstract text available Text: IGBT MODULE Spec.No.IGBT-SP-02005 R9 MBN1200E33D Silicon N-channel IGBT FEATURES  High speed, low loss IGBT module.  Low driving power due to low input capacitance MOS gate.  Low noise due to ultra soft fast recovery diode.  High reliability, high durability module.	Original	PDF	IGBT-SP-02005 MBN1200E33D 000cycles)
Untitled Abstract: No abstract text available Text: IGBT MODULE Spec.No.IGBT-SP-02005 R9 MBN1200E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.	Original	PDF	IGBT-SP-02005 MBN1200E33D 000cycles)
mdm1200e33d Abstract: MBN1200E33D Text: Spec.No.SR2-SP-05007 R3 DIODE MODULE MDM1200E33D OUTLINE DRAWING Unit in mm FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . CIRCUIT DIAGRAM C(K) C(K) E(A)	Original	PDF	SR2-SP-05007 MDM1200E33D mdm1200e33d MBN1200E33D
Untitled Abstract: No abstract text available Text: DUAL DIODE MODULE Spec.No.SR2-SP-05007R4 P1 MDM1200E33D FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . ABSOLUTE MAXIMUM RATINGS (TC=25 oC) Item Symbol Unit	Original	PDF	SR2-SP-05007R4 MDM1200E33D
mbm150gr12 Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics	Original	PDF	MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
Untitled Abstract: No abstract text available Text: DUAL DIODE MODULE Spec.No.SR2-SP-05007R4 P1 MDM1200E33D FEATURES  Low noise due to soft and fast recovery diodes.  High reliability, high durability diodes.  Isolated heat sink terminal to base . ABSOLUTE MAXIMUM RATINGS (TC=25 oC) Item Symbol Unit	Original	PDF	SR2-SP-05007R4 MDM1200E33D
C2E1 Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12 Text: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。】Ｃ：適合Ｓ.Ｃ：適合Ｎ：未対応（但し適用除外項目物質を含有）【ステータス】Ｍ：量産品Ｗ：ＷＳ	Original	PDF	MBN1200E17D MBN1600E17D MBN1800E17D MBN1800E17DD MBN2400E17D MBN1200E17E 12-Fast-on KS10003 C2E1 MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12
N2M400 Abstract: MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C Text: Status List M:Mass production Date:Jul. 2005 W:Working sample KS05013 A:Abolition High-Voltage High-Power Series Absolute Maximum Ratings Connection Single Chopper Connection Diode Characteristics VCES IC PC VCE sat ton toff tf Outline Status (V) (A) (W)	Original	PDF	KS05013 MBN800E33D MBN1200E33D MBN1200D33C MBN600C33A MBN400C33A MBN1200E25C N2M400 MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C