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    TOP 948

    Abstract: S944 BDS948 m lc 945 f 948 BDS944 BDS946 USB002 c 948 W468
    Text: PHILIPS IN TE RNATIONAL SbE Product specification date of issue April 1991 • 711002b 00431ÛG 33fi « P H I N 33-/7 BDS944/946/948 Data sheet status D T- PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors


    OCR Scan     		PDF 711002b BDS944/946/948 T-33-/7 OT223) BDS943/945/947. OT223 BDS944 BDS946 BDS948 TOP 948 S944 m lc 945 f 948 USB002 c 948 W468

    BF926

    Abstract: BF926 philips PNP UHF transistor transistor BF926
    Text: BF926_ — = T - 3 H 7 ._ -._ _ L L - PHILIPS INTERNATIONAL SbE D m D0421flb Tb^ « P H I N SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f. and


    OCR Scan     		PDF BF926_ 920S2 BF926 BF926 philips PNP UHF transistor transistor BF926

    Untitled

    Abstract: No abstract text available
    Text: • APX LLS3S31 0D2MM71 HbU N AMER PHILIPS/DISCRETE BC856 BC857 BC858 L7E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a SOT-23 plastic package. QUICK REFERENCE DATA BC856 BC857 BC858 “ V CEX max. 80 50 30 V - v CEO max. 65 45 30 V Collector current peak value


    OCR Scan     		PDF LLS3S31 0D2MM71 BC856 BC857 BC858 OT-23 BC856/857

    Untitled

    Abstract: No abstract text available
    Text: BSS63 _J V HIGH VOLTAGE P-N-P TRANSISTORS Silicon planar epitaxial transistor in a m icrominiature plastic package intended fo r application in thick and thin -film circuits. This transistor is intended fo r high voltage general purpose and switching


    OCR Scan     		PDF BSS63 frequen65

    Untitled

    Abstract: No abstract text available
    Text: BF579 _J V SILICON PLANAR TRANSISTOR P-N-P transistor in a m icrom iniature envelope prim arily intended fo r u.h.f. applications in thick and th in -film circuits. Q UICK REFERENCE D ATA - v CBO max. 20 V Collector-em itter voltage open base


    OCR Scan     		PDF BF579

    Untitled

    Abstract: No abstract text available
    Text: bbSB^Bl 0D2Mb]i7 27T * A P X N AMER PHILIPS/DISCRETE BCX71 SERIES b7E J> J V SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.


    OCR Scan     		PDF BCX71

    BDS940

    Abstract: BOS938 lem HA BDS934 BDS936 BDS938 BDS942 USB002 smd transistors 458
    Text: Philips Component« BDS934/936/938/940/942 Datasheet status Product specification date of Issue April 1991 PNP silicon epitaxial base power transistors PINNING -SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors


    OCR Scan     		PDF BDS934/936/938/940/942 OT223) BDS933/935/ BDS934 BDS936 BDS938 BDS940 BDS942 BOS938 lem HA USB002 smd transistors 458

    BF324

    Abstract: BF324 philips transistor BF324
    Text: BF324 r -ILips i n t e r n a t i o n a l SbE » 711G ö2b DO MElMb 2ÖS • P H I N T"3l-{7 H,F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic envelope especially intended for r.f. stages in f.m. front-ends in common base configuration.


    OCR Scan     		PDF BF324 BF324 philips transistor BF324

    PNP Epitaxial Silicon Transistor sot223

    Abstract: BDS78 RF SMD transistors pnp TP 2404 BDS201 BDS202 BDS204 IEC134
    Text: PHILIPS INTERNA TI ON AL SbE Product specification date of issu e April 1991 | 7 i i o â s t i oo4 3m a ? s i m p h i n T-33-tr BDS202/204/78 Data sheet s ta t u s D PNP Silicon epitaxial base power transistors PINNING - SOT223 D ESCRIPTIO N D ESCRIPTIO N


    OCR Scan     		PDF T-33-tr BDS202/204/78 OT223) BDS201 OT223 BDS202 BDS204 BDS78 PNP Epitaxial Silicon Transistor sot223 RF SMD transistors pnp TP 2404 IEC134

    C3317

    Abstract: S95 SMD 1S91 BDS950 BDS952 BDS954 BDS956
    Text: PHILIPS INTERNATIONAL SbE D • 7110fl2b D O M B n b 7TS « P H I N Philips Components Data sheet status Product specification date of issue April 1991 BDS950/952/954/956 P » - '7 PNP Silicon epitaxial base power transistors D ESCRIPTIO N PINNING - SOT223


    OCR Scan     		PDF OT223) BDS949/951/953/955, 7110fl2b BDS950/952/954/956 OT223 BDS950 BDS952 BDS954 BDS956 C3317 S95 SMD 1S91

    Untitled

    Abstract: No abstract text available
    Text: BC807 BC808 _ SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a SOT-23 plastic package fo r use in driver and ou tp u t stages o f aufio amplifiers in thick and thin -film hybrid circuits. N-P-N complements are BC817; R and BC818; R respectively.


    OCR Scan     		PDF BC807 BC808 OT-23 BC817; BC818; BC807-16 BC808-16 BC807-25

    Untitled

    Abstract: No abstract text available
    Text: • bb53T31 0Q24b77 744 APX N AUER PHILIPS/DISCRETE L7E BF721 BF723 J> SILICON EPITAXIAL TRANSISTORS PNP transistors in a microminiature plastic envelope intended for application in class-B video output stages in colour television receivers, and general purpose high voltage circuits.


    OCR Scan     		PDF bb53T31 0Q24b77 BF721 BF723 BF720 BF722 0Q24b7T

    Untitled

    Abstract: No abstract text available
    Text: • bbS3^31 0Q24b71 52b H A P X N AUER PHILIPS/DISCRETE BF660 b7E » ; v SILICON PLANAR TRANSISTOR P-N-P transistor, in a microminiature plastic envelope; intended for use as oscillator in v.h.f. tuners with extended frequency range and/or in conjunction with M OS-FETs in thick and thin-film circuits.


    OCR Scan     		PDF 0Q24b71 BF660

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE T> m ^1^53^31 0026143 41b A IAPX id N a y u b SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO-92 envelope, prim arily intended for high-speed, saturated switching applications for industrial service. NPN complement is 2N3904.


    OCR Scan     		PDF 2N3904.

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn

    marking bgp

    Abstract: BCX71 BCX71G BCX71H
    Text: • ^53=131 G024bl7 E7T M A P X N AMER PHILIPS/DISCRETE BCX71 SERIES b7E J> SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a m icrom iniature plastic envelope, intended fo r low level, low noise, low frequency purpose applications in hybrid circuits.


    OCR Scan     		PDF BCX71 200/IA OT-23. BCX71G 50/iS marking bgp BCX71G BCX71H

    L7E transistor

    Abstract: BF820 BF821 BF822 BF823
    Text: • bb53^31 N AMER □□2M7DM 5T2 B A P X PHILIPS/DISCRETE L7E BF821 BF823 ]> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature plastic envelope intended for application in thick and thin-film circuits. Primarily intended fo r use in telephony and professional communication equipment. N-P-N


    OCR Scan     		PDF BF821 BF823 BF820, BF822 BF821 L7E transistor BF820 BF823

    BF720

    Abstract: BF721 BF722 BF723
    Text: • bb53T31 002Mb77 744 H A P X N AMER PHILIPS/DISCRETE BF721 BF723 L7E » S ILIC ON E PITA XIA L T R A N S IS T O R S PNP tra n s is to rs in a m ic ro m in ia tu re plastic envelope in te nded f o r a p p lic a tio n in class-B video o u tp u t stages in c o lo u r tele visio n receivers, and general pu rpose high volta ge c irc u its .


    OCR Scan     		PDF bb53T31 002Mb77 BF721 BF723 BF720 BF722 BF721 7Z782B4 BF723

    Untitled

    Abstract: No abstract text available
    Text: BF660 _ / V SILICON PLANAR TRANSISTOR P-N-P transistor, in a microminiature plastic envelope; intended fo r use as oscillator in v.h.f. tuners w ith extended frequency range and/or in conjunction with MOS-FETs in thick and thin-film circuits,


    OCR Scan     		PDF BF660

    Untitled

    Abstract: No abstract text available
    Text: • bb53T31 DD34bM3 fiflT HIAPX N AUER PHILIPS/DISCRETE BF550 b?E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.


    OCR Scan     		PDF bb53T31 DD34bM3 BF550

    transistor smd ALG

    Abstract: transistor ALG 20 transistor ALG ALG TRANSISTOR SMD MARKING CODE ALg
    Text: • bbSBIBl OOSSAbb blfl ■ APX N AMER PHILIPS/DISCRETE PM BT3906 b?E D 7V SILICON EPITAXIAL TRANSISTOR P-N-P transistor in a microminiature SMD plastic envelope intended for surface mounted applications. The PMBT3906 is primarily intended for use in telephony and professional communication equipment.


    OCR Scan     		PDF BT3906 PMBT3906 transistor smd ALG transistor ALG 20 transistor ALG ALG TRANSISTOR SMD MARKING CODE ALg

    Untitled

    Abstract: No abstract text available
    Text: • bb53^31 00256=14 562 H A P X N AMER PHILIPS/DISCRETE b?E D _ PMBTA55 PMBTA56 J SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a microminiature SMD plastic envelope intended for surface mounted applications.


    OCR Scan     		PDF PMBTA55 PMBTA56

    transistor SMD MARKING CODE HF

    Abstract: smd code HF transistor
    Text: • bbS3T31 0DE470fl 14fl ■ APX N AUER PHILIPS/DISCRETE BF824 b7E D 7 V H.F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic SOT-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for SMD applications.


    OCR Scan     		PDF bbS3T31 0DE470fl BF824 OT-23 bb53131 0DEM711 7Z72155 7Z72159 D024712 transistor SMD MARKING CODE HF smd code HF transistor