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    MBB01 Price and Stock

    Techflex Inc MBB0.13BRS25

    GROUND BRAID TUBE 0.13"DIA X 25'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBB0.13BRS25 1 1
    • 1 $44.36
    • 10 $33.588
    • 100 $25.4394
    • 1000 $25.4394
    • 10000 $25.4394
    Buy Now

    Techflex Inc MBB0.13BRS250

    GROUND BRAID TUBE 0.13"DIAX250'
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MBB0.13BRS250 1
    • 1 $228.69
    • 10 $228.69
    • 100 $228.69
    • 1000 $228.69
    • 10000 $228.69
    Buy Now

    Schurter Electronic Components 5500.2069 (ALTERNATE: FMBB-0124-1210)

    ACLineFilter 1-Ph 2-St BrdBndAttn 12A 250VAC 2x5L 24-2Case Screw Ind | Schurter 5500.2069
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 5500.2069 (ALTERNATE: FMBB-0124-1210) Bulk 11 Weeks 2
    • 1 -
    • 10 $183.31
    • 100 $171.36
    • 1000 $161.39
    • 10000 $161.39
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    Schurter Electronic Components 5500.2068 (ALTERNATE: FMBB-0116-0810)

    AC Line Filter 1-Ph 2-St Brd BAnd Attn 8A 250VAC 2x7L(mH) 16-2 Case Scrw Std PC1 | Schurter 5500.2068
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 5500.2068 (ALTERNATE: FMBB-0116-0810) Bulk 11 Weeks 5
    • 1 -
    • 10 $105.9
    • 100 $93.9
    • 1000 $88.42
    • 10000 $88.42
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    Schurter Electronic Components 5500.2070 (ALTERNATE: FMBB-0131-1610)

    ACLineFltr 1-Ph 2-St BrdBndAttn 16A 250VAC 2x3.5L 31-2Case Screw Ind | Schurter 5500.2070
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 5500.2070 (ALTERNATE: FMBB-0131-1610) Bulk 11 Weeks 2
    • 1 -
    • 10 $269.42
    • 100 $229.01
    • 1000 $229.01
    • 10000 $229.01
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    MBB01 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBB0.13BRS25 Techflex GROUND BRAID TUBE 0.125""DIAX25' Original PDF
    MBB0.13BRS250 Techflex GROUND BRAID TUBE 0.125""DIAX250' Original PDF
    MBB0.13BS Techflex Cables, Wires - Management - Grounding Braid, Straps - 1/8" BRASS BRAID 250" Original PDF
    MBB0.13BS25 Techflex Cables, Wires - Management - Grounding Braid, Straps - 1/8" BRASS BRAID 25" Original PDF

    MBB01 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BLY89C

    Abstract: MSB056
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLY89C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor BLY89C DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


    Original
    BLY89C SC08a BLY89C MSB056 PDF

    TOP 948

    Abstract: S944 BDS948 m lc 945 f 948 BDS944 BDS946 USB002 c 948 W468
    Text: PHILIPS IN TE RNATIONAL SbE Product specification date of issue April 1991 • 711002b 00431ÛG 33fi « P H I N 33-/7 BDS944/946/948 Data sheet status D T- PNP silicon epitaxial base power transistors DESCRIPTION PINNING - SOT223 PIN 1 2 3 4 PNP silicon epitaxial base transistors


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    711002b BDS944/946/948 T-33-/7 OT223) BDS943/945/947. OT223 BDS944 BDS946 BDS948 TOP 948 S944 m lc 945 f 948 USB002 c 948 W468 PDF

    BF926

    Abstract: BF926 philips PNP UHF transistor transistor BF926
    Text: BF926_ — = T - 3 H 7 ._ -._ _ L L - PHILIPS INTERNATIONAL SbE D m D0421flb Tb^ « P H I N SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f. and


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    BF926_ 920S2 BF926 BF926 philips PNP UHF transistor transistor BF926 PDF

    MRB11040W

    Abstract: QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity
    Text: 33'/3 Preliminary specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor P H IL IP S MRB11040W 7110fi2Li 004b32M 0M2 M P H I N SbE D INTERNATIONAL FEATURES DESCRIPTION APPLICATIONS • Input prematching cell allows an


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    FO-67 MRB11040W 0G4b32M T-33-13 711002b 0D4b32fl MRB11040W QQHb32b International Power Sources NPN Silicon Epitaxial Planar Transistor copper permittivity PDF

    bf241

    Abstract: BF240 BF241 TO92 bF240 transistor bf241_ BF241 Philips
    Text: BF240 BF241 PH IL IP S I N T E R N A T I O N A L 5bE D • 711DäEb G D 4 2 m 4 MOT ■ P H I N T-J t - HF SILICON PLANAR EPITAXIAL TRANSISTORS // NPN transistors in a plastic envelope, recommended for AM mixers and IF amplifiers in A M /FM receivers. QUICK REFERENCE DATA


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    BF240 BF241 GD42m4 bf241 BF241 TO92 bF240 transistor bf241_ BF241 Philips PDF

    Untitled

    Abstract: No abstract text available
    Text: • BCW31 BCW32 BCW33 bhS3T31 0Q245b7 114 « A P X N AUER PHILIPS/DISCRETE b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.


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    BCW31 BCW32 BCW33 bhS3T31 0Q245b7 PDF

    Untitled

    Abstract: No abstract text available
    Text: bbSB^Bl QQ24453 MM•=! H A P X N AUER PHILIPS/DISCRETE BC846 BC847 BC848 b7E D J V. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. QUICK REFERENCE DATA BC846 Collector-emitter voltage V gE = 0 BC847 BC848


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    QQ24453 BC846 BC847 BC848 OT-23 QQ244S7 PDF

    Untitled

    Abstract: No abstract text available
    Text: • APX LLS3S31 0D2MM71 HbU N AMER PHILIPS/DISCRETE BC856 BC857 BC858 L7E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a SOT-23 plastic package. QUICK REFERENCE DATA BC856 BC857 BC858 “ V CEX max. 80 50 30 V - v CEO max. 65 45 30 V Collector current peak value


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    LLS3S31 0D2MM71 BC856 BC857 BC858 OT-23 BC856/857 PDF

    Untitled

    Abstract: No abstract text available
    Text: PMBT5550 _ / v _ SILICON N-P-N HIGH-VOLTAGE TRANSISTOR N-P-N high-voltage small-signal transistor for general purposes and especially telephony applications and encapsulated in a SOT-23 package. Q UICK REFERENCE D A T A Collector-base voltage open emitter


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    PMBT5550 OT-23 OT-23. PDF

    Untitled

    Abstract: No abstract text available
    Text: • b b S a i a i QQS4h?3 QTT » A P X N AMER PHILIPS/DISCRETE B F720 B F722 b?E » SILICON EPITAXIAL TRANSISTORS NPN transistors in a microminiature plastic envelope intended for class-B video output stages in colour television receivers, and general purpose high voltage circuits.


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    BF721 BF723 BF720 BF722 bbS3T31 0024b75 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bTE D • QOEflflM? M3fl P h ilip s S e m icon d u ctors Data sheet Product specification status BLU56 UHF power transistor date of issue January 1991 FE A T U R E S • SM D encapsulation • Emitter-ballasting resistors for optimum temperature profile


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    BLU56 bbS3T31 002AA53 MCB030 MC8027 PDF

    BSR19A

    Abstract: No abstract text available
    Text: • bbSB^Bl 0DE5Sfl5 &E7 H A P X N AMER PHI LIPS/ DISCRE TE b7E T> BSR19 BSR19A yv SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N-P-N high-voltage small-signal transistors for general purposes and especially telephony applications and encapsulated in a SOT-23 envelope.


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    BSR19 BSR19A OT-23 BSR20 BSR20A. BSR19 bb53T31 00255A7 BSR19A PDF

    Untitled

    Abstract: No abstract text available
    Text: BSS63 _J V HIGH VOLTAGE P-N-P TRANSISTORS Silicon planar epitaxial transistor in a m icrominiature plastic package intended fo r application in thick and thin -film circuits. This transistor is intended fo r high voltage general purpose and switching


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    BSS63 frequen65 PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbSBIBl Q0EMS73 113 « A P X A AMER PHILIPS/DISCRETE BCW 60 SERIES b?E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.


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    Q0EMS73 bbS3031 003457b PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b'lE J> bbS3^31 DOSfiOSfl Tbb IAPX PN3439 P N 3440 l SILICON N-P-N HIGH-VOLTAGE TRANSISTORS N-P-N high-voltage small-signal transistors in a TO-92 envelope and intended for use in telephony and professional communication equipment.


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    PN3439 PN5415/5416. PN3440 PDF

    Untitled

    Abstract: No abstract text available
    Text: BF579 _J V SILICON PLANAR TRANSISTOR P-N-P transistor in a m icrom iniature envelope prim arily intended fo r u.h.f. applications in thick and th in -film circuits. Q UICK REFERENCE D ATA - v CBO max. 20 V Collector-em itter voltage open base


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    BF579 PDF

    Untitled

    Abstract: No abstract text available
    Text: bbSB^Bl 0D2Mb]i7 27T * A P X N AMER PHILIPS/DISCRETE BCX71 SERIES b7E J> J V SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for low level, low noise, low frequency purpose applications in hybrid circuits.


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    BCX71 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H ILIP S /D IS C R E T E b'lE T> • bbSB'iai D0Sfl7ST B7T » A P X rm n p o rro u u m s p w m w u u n BLT81 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures


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    BLT81 OT223 PDF

    jc33725

    Abstract: JC337 JC337-25 JC337A jc33740 TO600 JC327 JC327A JC328 JC337-16
    Text: • JC337 JC337A JC338 bbSBTai □□27c1b2 73fi HIAPX N AMER PHILIPS/DISCRETE b'ÌE ]> SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in plastic TO-92 variant envelopes, primarily intended for use in driver and output stages of audio amplifiers. The JC337, JC337A, JC338 are complementary to the JC327, JC327A and JC328 respectively.


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    JC337 JC337A JC338 JC337, JC337A, JC338 JC327, JC327A JC328 JC337 jc33725 JC337-25 JC337A jc33740 TO600 JC327 JC337-16 PDF

    BDS940

    Abstract: BOS938 lem HA BDS934 BDS936 BDS938 BDS942 USB002 smd transistors 458
    Text: Philips Component« BDS934/936/938/940/942 Datasheet status Product specification date of Issue April 1991 PNP silicon epitaxial base power transistors PINNING -SOT223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 2 3 4 PNP silicon epitaxial base transistors


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    BDS934/936/938/940/942 OT223) BDS933/935/ BDS934 BDS936 BDS938 BDS940 BDS942 BOS938 lem HA USB002 smd transistors 458 PDF

    bs33

    Abstract: BDV67CF ZH09 BDV67AF BDV67BF BDV67DF NPN POWER DARLINGTON TRANSISTORS
    Text: Philips Components BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of Issue December 1990 NPN Darlington power transistors PINNING - SOT199 DESCRIPTION DESCRIPTION PIN N P N epitaxial ba se Darlington transistors for au dio output stages


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    BDV67AF/67BF/67CF/67DF BDV66AF/66BF/66CF/66DF. OT199 BDV67AF BDV67BF BDV67CF BDV67DF bs33 ZH09 NPN POWER DARLINGTON TRANSISTORS PDF

    IC 651

    Abstract: BDS643 BDS645 BDS647 BDS649 BDS651
    Text: Philips Com ponents BDS643/645/647/649/651 Data sheet status Product specification date o f issue AprS 1991 NPN silicon Daiiington power transistors PINNING -SO T223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 NPN epitaxial base transistors in a


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    BDS643/645/647/649/651 OT223, BDS644/646/648/650/652. -SOT223 BDS643 BDS645 BDS647 BDS649 BDS651 IC 651 PDF

    BF324

    Abstract: BF324 philips transistor BF324
    Text: BF324 r -ILips i n t e r n a t i o n a l SbE » 711G ö2b DO MElMb 2ÖS • P H I N T"3l-{7 H,F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic envelope especially intended for r.f. stages in f.m. front-ends in common base configuration.


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    BF324 BF324 philips transistor BF324 PDF

    BSR13

    Abstract: BSR14 CBO10
    Text: 711 G a e b 0 0 ^ 5 3 5 2 bfl PHIN BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTO RS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits. QUICK R EF ER E N C E DATA


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    711Qaeb BSR13 BSR14 BSR13 BSR14 7Z82486 7Z82484 CBO10 PDF