HT23C020
Abstract: No abstract text available
Text: HT23C020 CMOS 256K´8-Bit Mask ROM Features • · · Operating voltage 2.7V~5.5V Low power consumption - Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) - Standby: 30mA max. (V CC=5V) 10mA max. (VCC=3V) Access time: 150ns max. (VCC=5V) 250ns max. (VCC=3V)
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HT23C020
150ns
250ns
32-pin
HT23C020
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HT23C512
Abstract: No abstract text available
Text: HT23C512 CMOS 64K´8-Bit Mask ROM Features • · · Operating voltage: 2.7V~5.5V Low power consumption - Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) - Standby: 30mA max. (V CC=5V) 10mA max. (VCC=3V) Access time: 150ns max. (VCC=5V) 250ns max. (VCC=3V)
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HT23C512
150ns
250ns
28-pin
HT23C512
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HT23C010
Abstract: No abstract text available
Text: HT23C010 CMOS 128K´8-Bit Mask ROM Features • · · Operating voltage: 2.7V~5.5V Low power consumption - Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) - Standby: 30mA max. (V CC=5V) 10mA max. (VCC=3V) Access time: 150ns max. (VCC=5V) 250ns max. (VCC=3V)
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HT23C010
150ns
250ns
28-pin
32-pin
HT23C010
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HT23C128
Abstract: No abstract text available
Text: HT23C128 CMOS 16K´8-Bit Mask ROM Features • · · Operating voltage: 2.7V~5.5V Low power consumption - Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) - Standby: 30mA max. (V CC=5V) 10mA max. (VCC=3V) Access time: 150ns max. (VCC=5V) 250ns max. (VCC=3V)
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HT23C128
150ns
250ns
28-pin
HT23C128
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HT23C040
Abstract: No abstract text available
Text: HT23C040 CMOS 512K´8-Bit Mask ROM Features • · · Operating voltage: 2.7V~5.5V Low power consumption – Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) – Standby: 30mA max. (V CC=5V) 10mA max. (VCC=3V) Access time: 120ns max. (VCC=5V) 250ns max. (VCC=3V)
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HT23C040
120ns
250ns
32-pin
HT23C040
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524288
Abstract: HT23C040
Text: HT23C040 CMOS 512K´8-Bit Mask ROM Features • · · Operating voltage: 2.7V~5.5V Low power consumption – Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) – Standby: 30mA max. (V CC=5V) 10mA max. (VCC=3V) Access time: 120ns max. (VCC=5V) 250ns max. (VCC=3V)
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HT23C040
120ns
250ns
32-pin
HT23C040
524288
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HT23C040
Abstract: No abstract text available
Text: HT23C040 CMOS 512K´8-Bit Mask ROM Features • · · Operating voltage: 2.7V~5.5V Low power consumption – Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) – Standby: 30mA max. (V CC=5V) 10mA max. (VCC=3V) Access time: 120ns max. (VCC=5V) 250ns max. (VCC=3V)
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HT23C040
120ns
250ns
32-pin
HT23C040
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HT23C010
Abstract: No abstract text available
Text: HT23C010 CMOS 128Kx8-Bit Mask ROM Features • • • • • Operating voltage: 2.7V~5.5V Low power consumption – Operation: 25mA Max. V CC=5V 10mA Max. (VCC=3V) – Standby: 30µA Max. (VCC=5V) 10µA Max. (VCC=3V) Access time:150ns Max. (VCC=5V) 250ns Max. (VCC=3V)
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HT23C010
150ns
250ns
28-pin
32-pin
HT23C010
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HT23C256
Abstract: 32K-8-bit
Text: HT23C256 CMOS 32Kx8-Bit Mask ROM Features • • • • • Operating voltage 2.7V~5.5V Low power consumption – Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) – Standby: 30µA max. (VCC=5V) 10µA max. (VCC=3V) Access time:150ns max. (VCC=5V) 250ns max. (VCC=3V)
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HT23C256
150ns
250ns
28-pin
HT23C256
32K-8-bit
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HT23C020
Abstract: No abstract text available
Text: HT23C020 CMOS 256Kx8-Bit Mask ROM Features • • • • • Operating voltage 2.7V~5.5V Low power consumption – Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) – Standby: 30µA max. (VCC=5V) 10µA max. (VCC=3V) Access time:150ns max. (VCC=5V) 250ns max. (VCC=3V)
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HT23C020
150ns
250ns
32-pin
HT23C020
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HT23C128
Abstract: No abstract text available
Text: HT23C128 CMOS 16Kx8-Bit Mask ROM Features • • • • • Operating voltage: 2.7V~5.5V Low power consumption – Operation: 25mA Max. V CC=5V 10mA Max. (VCC=3V) – Standby: 30µA Max. (VCC=5V) 10µA Max. (VCC=3V) Access time:150ns Max. (VCC=5V) 250ns Max. (VCC=3V)
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HT23C128
150ns
250ns
28-pin
HT23C128
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HT23C512
Abstract: No abstract text available
Text: HT23C512 CMOS 64Kx8-Bit Mask ROM Features • • • • • Operating voltage: 2.7V~5.5V Low power consumption – Operation: 25mA Max. VCC=5V 10mA Max. (VCC=3V) – Standby: 30µA Max. (VCC=5V) 10µA Max. (VCC=3V) Access time:150ns Max. (VCC=5V) 250ns Max. (VCC=3V)
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HT23C512
150ns
250ns
28-pin
HT23C512
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HT23C256
Abstract: No abstract text available
Text: HT23C256 CMOS 32Kx8-Bit Mask ROM Features • • • • • Operating voltage 2.7V~5.5V Low power consumption – Operation: 25mA max. V CC=5V 10mA max. (VCC=3V) – Standby: 30µA max. (VCC=5V) 10µA max. (VCC=3V) Access time:150ns max. (VCC=5V) 250ns max. (VCC=3V)
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HT23C256
150ns
250ns
28-pin
HT23C256
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MAX4674
Abstract: MAX4674EEE MAX4674EGE MAX4674EGP MAX4674ESE MAX4674EUE pc3015
Text: 19-1708; Rev 3; 12/06 3V/5V, 4Ω, Wideband Quad 2:1 Analog Multiplexer Features ♦ Guaranteed On-Resistance 4Ω max +5V Supply 6Ω max (+3V Supply) ♦ Guaranteed Match Between Channels 0.4Ω max ♦ Guaranteed Flatness Over Signal Range 0.8Ω max
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-114dB
-67dB
MAX4674
MAX4674
MAX4674EEE
MAX4674EGE
MAX4674EGP
MAX4674ESE
MAX4674EUE
pc3015
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MAX4674
Abstract: MAX4674EEE MAX4674EGE MAX4674EGP MAX4674ESE MAX4674EUE MAX4674EE
Text: 19-1708; Rev 2; 5/02 3V/5V, 4Ω, Wideband Quad 2:1 Analog Multiplexer Features ♦ Guaranteed On-Resistance 4Ω max +5V Supply 6Ω max (+3V Supply) ♦ Guaranteed Match Between Channels 0.4Ω max ♦ Guaranteed Flatness Over Signal Range 0.8Ω max ♦ 1.8V Operation
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MAX4674
MAX4674
MAX4674EEE
MAX4674EGE
MAX4674EGP
MAX4674ESE
MAX4674EUE
MAX4674EE
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MAX4653EUE
Abstract: MAX4653
Text: 19-1661; Rev 1; 5/00 Low-Voltage, 4Ω, Quad, SPST, CMOS Analog Switches Features ♦ On-Resistance 4Ω max at 5V 7Ω max at 3V ♦ On-Resistance Flatness 0.8Ω max at 5V 2.5Ω max at 3V ♦ On-Resistance Matching 0.2Ω max +2.7V to +5.5V ♦ +1.8V to +5.5V Single-Supply Voltage
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MAX4651/MAX4652/MAX4653
X4651/MAX4652/MAX4653
MAX4651/MAX4652/MAX4653
MAX4653EUE
MAX4653
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MAX4732EUA
Abstract: MAX4731 MAX4731EBL-T MAX4731EUA MAX4732 MAX4732EBL-T MAX4733 MAX4733EBL-T MAX4733EUA
Text: 19-2645; Rev 0; 10/02 50Ω Dual SPST Analog Switches in UCSP Features ♦ 1.52mm ✕ 1.52mm UCSP Package ♦ Guaranteed On-Resistance RON 25Ω (max) at +5V 50Ω (max) at +3V ♦ On-Resistance Matching 3Ω (max) at +5V 3.5Ω (max) at +3V ♦ Guaranteed <0.1nA Leakage Current at
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-108dB
-72dB
MAX4731
MAX4732
MAX4733
MAX4731/MAX4732/MAX4733
MAX4732EUA
MAX4731EBL-T
MAX4731EUA
MAX4732EBL-T
MAX4733EBL-T
MAX4733EUA
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MAX4653
Abstract: MAX4653EUE MAX4651 MAX4651ESE MAX4651EUE MAX4652 MAX4652ESE MAX4652EUE MAX4653ESE
Text: 19-1661; Rev 1; 5/00 Low-Voltage, 4Ω, Quad, SPST, CMOS Analog Switches Features ♦ On-Resistance 4Ω max at 5V 7Ω max at 3V ♦ On-Resistance Flatness 0.8Ω max at 5V 2.5Ω max at 3V ♦ On-Resistance Matching 0.2Ω max +2.7V to +5.5V ♦ +1.8V to +5.5V Single-Supply Voltage
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-100dB
MAX4651
MAX4652
MAX4653
16-pin
-75dB
MAX4651/MAX4652/MAX4653
MAX4653EUE
MAX4651ESE
MAX4651EUE
MAX4652ESE
MAX4652EUE
MAX4653ESE
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MAX4653
Abstract: motorola transistor 307 MAX4653EUE MAX4651 MAX4651ESE MAX4651EUE MAX4652 MAX4652ESE MAX4652EUE MAX4653ESE
Text: 19-1661; Rev 0; 4/00 Low-Voltage, 4Ω, Quad, SPST, CMOS Analog Switches Features ♦ On-Resistance 4Ω max at 5V 7Ω max at 3V ♦ On-Resistance Flatness 0.8Ω max at 5V 2.5Ω max at 3V ♦ On-Resistance Matching 0.2Ω max +2.7V to +5.5V ♦ +1.8V to +5.5V Single-Supply Voltage
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-100dB
MAX4651
MAX4652
MAX4653
16-pin
-75dB
MAX4651/MAX4652/MAX4653
motorola transistor 307
MAX4653EUE
MAX4651ESE
MAX4651EUE
MAX4652ESE
MAX4652EUE
MAX4653ESE
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Untitled
Abstract: No abstract text available
Text: 74LX1G125 SINGLE BUS BUFFER 3-STATE • ■ ■ 5V TOLERANT INPUTS HIGH SPEED: tPD = 4.7ns (MAX.) at VCC = 3V LOW POWER DISSIPATION: ICC = 1µA (MAX.) at TA = 25°C POWER DOWN PROTECTION ON INPUTS AND OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 24mA (MIN) at VCC = 3V
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74LX1G125
300mA
OT23-5L
OT323-5L
74LX1G1o
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74LX1G02
Abstract: No abstract text available
Text: 74LX1G02 SINGLE 2-INPUT NOR GATE • ■ ■ 5V TOLERANT INPUTS HIGH SPEED: tPD = 4.2ns MAX. at VCC = 3V LOW POWER DISSIPATION: ICC = 1µA (MAX.) at TA = 25°C POWER DOWN PROTECTION ON INPUTS AND OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 24mA (MIN) at VCC = 3V
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74LX1G02
74LX1G02
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KM62256BLP-V
Abstract: KM62256BLS-V KM62256B KM62256BLG
Text: KM62256BL-V CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7 - 5.5V • Fast Access Time: 3V Operation: 240ns Max. 5V Operation: '120ns (Max.) • Low Power Dissipation Standby/Operating 3V Operation: 2.4fxW/1.2mW (Typ.)
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KM62256BL-V
240ns
120ns
/35mW
KM62256BLP-V:
28-pin
600mil)
KM62256BLS-V:
300mil)
KM62256BLP-V
KM62256BLS-V
KM62256B
KM62256BLG
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KM681000AL-V
Abstract: KM681000ALP-V KM681000ALT KM68100al
Text: KM681000AL-V CMOS SRAM 131.072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage: 2.7 - 5.5V • Fast Access Time 3V Operation: 240ns Max. 5V Operation: 120ns (Max.) • Low Power Dissipation Standby/Operating 3V Operation: 2.4iiW/1.2mW (Typ.)
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KM681000AL-V
240ns
120ns
0/iW/35mW
KM681000ALP-V:
32-pin
600mil)
KM681000ALG-V:
525mil)
KM681000AL-V
KM681000ALP-V
KM681000ALT
KM68100al
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YTS4123
Abstract: YTS4125
Text: YTS4123 SILICON NPN EPITAXIAL TYPE FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: • Low Leakage Current : I^gQ=50nA Max. IEBO=-’0nA (Max.) @ V q B=20V @ V e b =3V • Low Saturation Voltage : vCE(sat)=0-3v(Max-) @ Ic=50mA, IB=5mA
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YTS4123
YTS4125
100MHz
100pA
YTS4123
YTS4125
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