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    HFA3135IHZ96 Renesas Electronics Corporation Ultra High Frequency Matched Pair Transistors Visit Renesas Electronics Corporation
    F0448NBGK Renesas Electronics Corporation Dual Matched Broadband RF DVGA Visit Renesas Electronics Corporation
    HFA3134IHZ96 Renesas Electronics Corporation Ultra High Frequency Matched Pair Transistors Visit Renesas Electronics Corporation
    F0448NBGK8 Renesas Electronics Corporation Dual Matched Broadband RF DVGA Visit Renesas Electronics Corporation
    F0443EVB Renesas Electronics Corporation Evaluation Board for F0443 Dual Matched Broadband RF DVGA Visit Renesas Electronics Corporation
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    KEMET Corporation M123A10BXB103KS - PROH MAT CHRG

    Multilayer Ceramic Capacitor 0.01?F 10% 50V SMD - Bulk (Alt: M123A10BXB103KS PR)
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    TE Connectivity 7-215079-6

    Headers & Wire Housings 6 POS TOP ENTRY SKT
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    Bourns Inc SM-LP-5001E

    Audio Transformers / Signal Transformers 600uH 7.36mm SMT Line Matching
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    TTI SM-LP-5001E Reel 8,400 400
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    TE Connectivity 7-188275-6

    Headers & Wire Housings MICRO MATCH
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    TTI 7-188275-6 Reel 2,700 900
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    TE Connectivity 7-215079-8

    Headers & Wire Housings 8 PIN U MATCH
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    TTI 7-215079-8 Reel 2,250 250
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    MATCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    POUT315

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED


    OCR Scan     		PDF -45dBc TIM5964-16SL-081 2-16G1B) POUT315

    TIM0910-20

    Abstract: No abstract text available
    Text: TIM0910-20 FE A TU R E S : • HIGH POWER ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE P 1dB = 43.0 dBm at 9.5 GHz to 10.5GHz ■ HIGH GAIN GldB B 7 0 dB at 9 5 GHz * 10 5 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTIC


    OCR Scan     		PDF TIM0910-20 2-11C1B) TIM0910-20

    TIS69

    Abstract: TIS70 tis70 texas instruments
    Text: TYPES TIS69, TIS70 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . O L S 7 3 9 6 6 9 , M A R C H 1 9 6 7 -R E V IS E D M A R C H 1973 SIlECTf FIELD-EFFECT TRANSISTORS i SUPPLIED AS MATCHED PAIRS High yf, / C i„ Ratio High-Frequency Figure-of-Merit


    OCR Scan     		PDF TIS69, TIS70 TIS69 tis70 texas instruments

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7179-4 MW50970196 TIM7179-4

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r - PidB = 39-5 d B m at 5.9 G H z to 6.4 GHz


    OCR Scan     		PDF TIM5964-8SL TIM5964-8SL MW50750196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1414-4 MW50280196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power • P-idB = 44.5 dBm at 1.8 GHz • High gain - G idB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF TPM1818-30 2-16G1B) MW40020196

    D425G

    Abstract: ACT21 SN74BCT2166
    Text: SN74BCT2163, SN74BCT2164, SN74BCT2166 16K x 5 CACHE ADDRESS COMPARATORS/TAG RAMs SCHS012-D3513, JUNE 1990-REVISED NOVEMBER 1991 SN74BCT2163, SN74BCT2164 Fast Address to MATCH Delay. 12 ns Max FM PACKAGE CTOP VIEW ’BCT2163 Has Totem-Pole Match Output Q\*~


    OCR Scan     		PDF SN74BCT2163, SN74BCT2164, SN74BCT2166 SCHS012-D3513, 1990-REVISED BCT2163 BCT2164 BCT2166 D425G ACT21

    Untitled

    Abstract: No abstract text available
    Text: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST GP 00 R E V IS IO N S LTR E1 DESCRIPTION DATE DWN ADD - 1 3 THRU - 17, MATCH PRODUCTION DRWING REV’S 6 /F E B /0 7


    OCR Scan     		PDF 05FEB05 05FEB05

    5964-16L

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 1 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 4 2 .5 d B m at 5.9 G H z to 6.4 G H z


    OCR Scan     		PDF TIM5964-16L MW50780196 5964-16L

    Untitled

    Abstract: No abstract text available
    Text: S N 74AC T215 7 2K x 16 C A C H E A D D R E S S C O M PA R A TO R /D A TA RAM D3326, JANUARY 1990-REVlSED JUNE 1990 Fast A ddress to Match Delay . . . 20 ns Max FN PACKAGE TOP VIEW Totem -Pole and Open-Drain Match Outputs On-Chip Address/D ata Com parator


    OCR Scan     		PDF D3326, 1990-REVlSED T2157 18-bit T2157 ACT2157

    Untitled

    Abstract: No abstract text available
    Text: TIM3742-8SL FEATURES: • LOW INTERMODULATION DISTORTION IM3 = -45 dBc at Po 28.5 dBm, Single Carrier Level ■ HIGH POWER PldB = 39-5 dBm at 3.7 GHz to 4.2 GHz ■ HIGH GAIN G-|dB = 10.0dB at 3.7 GHz to 4.2 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE


    OCR Scan     		PDF TIM3742-8SL 2-11D1B)

    D2911

    Abstract: bit-slice
    Text: TMS2150A 512 x 8 CACHE ADDRESS COMPARATOR D2911, M A RCH 1 982-R E V IS E D SEP TE M B E R 1990 DW, JD, OR NT PACKAGE TOP VIEW ’ACT2150A is Recommended for New Designs RESET[ 1 U Fast Address to Match Valid Delay - Two Speed Ranges: 35 ns and 45 ns 512


    OCR Scan     		PDF TMS2150A D2911, 982-R ACT2150A 300-Mil 24-Pin D2911 bit-slice

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r


    OCR Scan     		PDF TIM7785-16SL MW51130196 TIM7785-16SL

    AX2022

    Abstract: TACT2150 D6142
    Text: TACT2150 512 X 8 CACHE ADDRESS COMPARATOR D 2 9 9 3 . JA N U A R Y 1 9 8 7 - R E V IS E D SEPTEM BER 1967 Address to MATCH Valid Time TACT2150-20 . . . 20 ns max TACT2150-30 . . . 30 ns max DW, JD . OR NT PACKAGE 300-Mil 24-Pin Ceramic Side-Brazed or Plastic Dual-In-Line or Small Outline


    OCR Scan     		PDF TACT2150 300-Mil 24-Pin AX2022 D6142

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1415-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 14.5 GHz to 15.0 GHz • High gain - G 1dB = 6.0 dB at 14.5 GHz to 15.0 GHz • Broad Band Internally M atched • H erm etically sealed package


    OCR Scan     		PDF TIM1415-2 MW50390196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 5.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM7785-16 TIM7785-16

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -43 d B c at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.1 GHz to 7.9 GHz


    OCR Scan     		PDF TIM7179-7L MW50980196

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1011-5 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 37.5 dBm at 10.7 GHz to 11.7 GHz • High gain - G-|dB = 7.0 dB at 10.7 GHz to 11.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1011-5 MW50110196

    PD4A

    Abstract: No abstract text available
    Text: _ bq3285 UIMITRODE- Real-Time Clock RTC Features >• Direct clock/calendar replace­ ment for IBM AT-compatible computers and other applications >- Functionally compatible with the DS1285 ~ Closely matches MC146818A pin configuration >• 114 bytes of general nonvolatile


    OCR Scan     		PDF bq3285 24-hour 24-pin DS1285 MC146818A bq3285 PD4A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1112-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 11.7 GHz to 12.7 GHz • High gain - G-|dB = 7.5 dB at 11.7 GHz to 12.7 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan     		PDF TIM1112-4 MW50190196

    SCAD002

    Abstract: BCT2164
    Text: SN74BCT2163, SN74BCT2164, SN74BCT2166 16K x 5 CACHE ADDRESS COMPARATORS/TAG RAMs _ D3513, JUNE 1990 — REVISED A U G U S T 1990 • Fast Address to MATCH Delay . . .12-ns Max • ’BCT2163 has Totem-Pole Match Output


    OCR Scan     		PDF SN74BCT2163, SN74BCT2164, SN74BCT2166 D3513, 12-ns BCT2163 BCT2164 BCT2166 75-pF SCAD002

    50920-1

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 6.4 GHz to 7.2 GHz • High gain - G 1dB = 6.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM6472-16 TIM6472-16 50920-1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4450-16 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 4.4 GHz to 5.0 GHz • High gain - G 1dB = 9.0 dB at 4.4 GHz to 5.0 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		PDF TIM4450-16 UnW50530196 MW50530196 TPM4450-16